JANTXV1N6461US [MICROSEMI]
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2;![JANTXV1N6461US](http://pdffile.icpdf.com/pdf2/p00240/img/icpdf/JANTX1N6466U_1447734_icpdf.jpg)
型号: | JANTXV1N6461US |
厂家: | ![]() |
描述: | Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, SURFACE MOUNT PACKAGE-2 局域网 二极管 |
文件: | 总6页 (文件大小:491K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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1N6461US – 1N6468US
Qualified Levels:
JAN, JANTX, and
JANTXV
Voidless Hermetically Sealed Unidirectional
Available on
commercial
versions
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
DESCRIPTION
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”
voltages are available from 5.0 to 51.6 volts. They are very robust, using a hard glass casing
and internal Category 1 metallurgical bonds. These devices are also available in axial-leaded
packages for thru-hole mounting.
“B” SQ-MELF
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.
Available as 500 watt peak pulse power (PPP).
Also available in:
Working peak “standoff” voltage (VWM) from 5.0 to 51.6 volt.
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
“B” Package
(axial –leaded)
1N6461 - 1N6468
Internal “Category 1” metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
(See part nomenclature for all available options.)
•
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
Military and other high-reliability applications.
Extremely robust construction.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Protection from secondary effects of lightning per select levels in IEC61000-4-5.
Square-end-cap terminals for easy placement.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote 050”.
MAXIMUM RATINGS @ 25 ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Parameters/Test Conditions
Symbol
TJ and TSTG
RӨJEC
IFSM
Value
-55 to +175
20
Unit
oC
Junction and Storage Temperature
Thermal Resistance, Junction to Endcap
Forward Surge Current @ 8.3 ms half-sine
Forward Voltage @ 1 Amp
ºC/W
A
80
Fax: (978) 689-0803
VF
1.5
V
MSC – Ireland
PPP
500
W
Peak Pulse Power @ 10/1000 µs
Reverse Power Dissipation (1)
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
PR
2.5
W
oC
Solder Temperature @ 10 s
260
Notes: 1. Derate at 50 mW/oC (see figure 4).
Website:
www.microsemi.com
T4-LDS-0286-1, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 1 of 6
1N6461US – 1N6468US
MECHANICAL and PACKAGING
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
•
•
•
•
•
•
•
TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only.
MARKING: Body paint and part number.
POLARITY: Cathode band.
TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
WEIGHT: Approximately 750 milligrams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N6461 US e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
CDS (reference JANS)
Blank = commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
JEDEC type number
See Electrical Characteristics
table
SYMBOLS & DEFINITIONS
Definition
Symbol
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature expressed in %/°C or mV/°C.
αV(BR)
V(BR)
VWM
ID
Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.
Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage
that may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
IPP
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (IPP) for a specified waveform.
VC
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of IPP and VC.
PPP
T4-LDS-0286-1, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 2 of 6
1N6461US – 1N6468US
ELECTRICAL CHARACTERISTICS
MINIMUM
BREAK
DOWN
VOLTAGE
V(BR)
BREAKDOWN
CURRENT
I (BR)
RATED
WORKING
STANDOFF
VOLTAGE
VWM
MAXIMUM
STANDBY
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
MAXIMUM
PEAK IMPULSE
CURRENT
IPP
MAXIMUM
TEMP. COEF.
OF
αV(BR)
TYPE
@ VRWM
@ 10/1000 µs
@ 8/20
µs
@ 10/1000
µs
@ I(BR)
Volts
5.6
mA
25
20
5
V (pk)
5
V (pk)
9.0
A (pk)
315
258
125
107
69
A (pk)
56
46
22
19
12
11
8
%/oC
-0.03, +0.045
+0.060
µA
3000
2500
500
500
50
1N6461US
1N6462US
1N6463US
1N6464US
1N6465US
1N6466US
1N6467US
1N6468US
6.5
6
11.0
22.6
26.5
41.4
47.5
63.5
78.5
13.6
16.4
27.0
33.0
43.7
54.0
12
+0.085
5
15
+0.085
2
24
+0.096
1
30.5
40.3
51.6
3
63
+0.098
1
2
45
+0.101
1
2
35
6
+0.103
T4-LDS-0286-1, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 3 of 6
1N6461US – 1N6468US
GRAPHS
Pulse Time (tp)
FIGURE 1
Peak Pulse Power vs Pulse Time
Time (t) in Milliseconds
FIGURE 2
10/1000 µs Current Impulse Waveform
T4-LDS-0286-1, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 4 of 6
1N6461US – 1N6468US
GRAPHS
Time (t) in Milliseconds
FIGURE 3
8/20 µs Current Impulse Waveform
T – Temperature - °C
FIGURE 4
Derating Curve
T4-LDS-0286-1, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 5 of 6
1N6461US – 1N6468US
PACKAGE DIMENSIONS
Inch
Max
Millimeters
Min
Min
Max
BD
BL
ECT
S
0.137 0.148
0.200 0.225
0.019 0.028
3.48
3.76
5.08
0.48
0.08
5.72
0.71
---
0.003
---
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for information only.
3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations.
4. Dimensions are pre-solider dip.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
INCH
MILLIMETERS
A
B
C
0.288
0.070
0.155
7.32
1.78
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be placed
in the center between the pads
as an optional spot for cement.
T4-LDS-0286-1, Rev. 1 (4/24/13)
©2013 Microsemi Corporation
Page 6 of 6
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