JANTXV2N1132L [MICROSEMI]

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN;


型号：	JANTXV2N1132L
厂家：	Microsemi
描述：	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN 晶体管
文件：	总3页 (文件大小：125K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

LOW POWER PNP SILICON TRANSISTOR

Qualified per MIL-PRF-19500/177

DEVICES

LEVELS

JAN

JANTX

JANTXV

2N1131

2N1131L

2N1132

2N1132L

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Vdc

5.0

Vdc

Collector Current

600

mAdc

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

0.6

2.0

P_T

TO-39

2N1131, 2N1132

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

NOTES:

1/ Derate linearly 3.43mW/°C for T_A> +25°C

2/ Derate linearly 11.4mW/°C for T_C> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

Vdc

Collector- Base Breakdown Voltage

I_C= 10µAdc

TO-5

2N1131L, 2N1132L

V_(BR)CBO

Emitter-Base Cutoff Current

V_EB= 5.0Vdc

I_EBO

100

µAdc

mAdc

Collector-Emitter Cutoff Current

I_CER

V_CE= 50Vdc, R_BE 10 ohms

Collector-Base Cutoff Current

V_CB= 50Vdc

1.0

µAdc

I_CBO

_CB= 30Vdc

T4-LDS-0187 Rev. 1 (101882)

Page 1 of 3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions

ON CHARACTERTICS ⁽³⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 150mAdc, V_CE= 10Vdc

2N1131, L

2N1132, L

h_FE

I_C= 5.0mAdc, V_CE= 10Vdc

2N1131, L

2N1132, L

Collector-Emitter Saturation Voltage

I_C= 150mAdc, I_B= 15mAdc

V_CE(sat)

Vdc

1.3

1.5

Base-Emitter Saturation Voltage

I_C= 150mAdc, I_B= 15mAdc

V_BE(sat)

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

h_fe

Min.

Max.

Unit

Small-Signal Short-Circuit Forward-Current Transfer Ratio

I_C= 1.0mAdc, V_CE= 5.0Vdc, f = 1.0kHz

I_C= 5.0mAdc, V_CE= 10Vdc, f = 1.0kHz

2N1131, L

2N1132, L

2N1131, L

2N1132, L

Small-Signal Open-Circuit Output Admittance

I_C= 1.0mAdc, V_CE= 5.0Vdc, f = 1.0kHz

I_C= 5.0mAdc, V_CE= 10Vdc, f = 1.0kHz

1.0

5.0

h_ob

µmho

Small-Signal Short-Circuit Input Impedance

I_C= 1.0mAdc, V_CE= 5.0Vdc, f = 1.0kHz

I_C= 5.0mAdc, V_CE= 10Vdc, f = 1.0kHz

Ω

h_ib

Magnitude of Common Emitter Small-Signal Short Circuit

Forward-Current Transfer Ratio

|h_fe|

I_C= 50mAdc, V_CE= 10Vdc, f = 20MHz

2N1131, L

2N1132, L

2.5

3.0

Output Capacitance

V_CB= 10Vdc, I_E= 0, 100 kHz  f  1.0MHz

C_obo

C_ibo

4.5

Iutput Capacitance

V_EB= 0.5Vdc, I_C= 0, 100 kHz  f  1.0MHz

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Turn-On Time + Turn-Off Time

(See figure 2 of MIL-PRF-177)

^ton + ^toff

s

(3) Pulse Test: Pulse Width = 300s, Duty Cycle  2.0%

T4-LDS-0187 Rev. 1 (101882)

Page 2 of 3

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

Dimensions

Inches Millimeters

Symbol

Note

Min Max

.305 .335

.240 .260

.335 .370

.200 TP

.016 .021

.500 .750 12.70 19.05 7, 8, 12

.016 .019

.050

.250

Min

7.75

6.10

8.51

5.08 TP

0.41

Max

8.51

6.60

9.40

L₁

7, 8

0.53

0.41

0.48

1.27

7, 8

L₂

6.35

2.54

.100

.050

1.27

1.14

0.86

0.25

.029 .045

.028 .034

.010

0.74

0.71



45 TP

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18

mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be

measured by direct methods or by gauging procedure.

8. Dimension LU applies between L₁and L₂. Dimension LD applies between L₂and LL minimum. Diameter is

uncontrolled in and beyond LL minimum.

9. All three leads.

10. The collector shall be internally connected to the case.

11. Dimension r (radius) applies to both inside corners of tab.

12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)

max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..

* FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).

T4-LDS-0187 Rev. 1 (101882)

Page 3 of 3

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