JANTXV2N1484 [MICROSEMI]
NPN SILICON MEDIUM POWER TRANSISTOR; NPN硅中功率晶体管
| 型号： | JANTXV2N1484 |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON MEDIUM POWER TRANSISTOR |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/ 207
Devices
Qualified Level
JAN
JANTX
2N1483
2N1484
2N1485
2N1486
MAXIMUM RATINGS
Ratings
Symbol 2N1483 2N1484 Unit
2N1485 2N1486
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
40
55
Vdc
Vdc
Vdc
Adc
VCEO
VCBO
VEBO
IC
60
100
12
Collector Current -- Continuous
Total Power Dissipation
3.0
@ TA = 250C (1)
@ TC = 250C (2)
1.75
25
W
W
0C
PT
TO-8*
Operating & Storage Junction Temperature Range
-65 to +200
TJ, T
stg
1) Derate linearly 0.010 W/0C for TA > 250C
2) Derate linearly 0.143 W/0C for TC > 250C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Symbol
V(BR)CEO
V(BR)CBO
V(BR)CEX
Min.
Max.
Unit
Vdc
Vdc
Vdc
40
55
IC = 100 mAdc
2N1483, 2N1485
2N1484, 2N1486
Collector-Base Breakdown Voltage
IC = 100 mAdc
60
100
2N1483, 2N1485
2N1484, 2N1486
Collector-Emitter Breakdown Voltage
VEB = 1.5 Vdc, IC = 0.25 mAdc
60
100
2N1483, 2N1485
2N1484, 2N1486
Collector-Base Cutoff Current
VCB = 30 Vdc
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 12 Vdc
15
15
mAdc
mAdc
2N1483, 2N1485
2N1484, 2N1486
ICBO
15
IEBO
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N1483, 2N1484, 2N1485, 2N1486 JAN SERIES
ELECTRICAL CHARACTERISTICS (con”t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
20
35
60
100
IC = 750 mAdc, VCE = 4.0 Vdc
2N1483, 2N1484
2N1485, 2N1486
hFE
Collector-Emitter Saturation Voltage
IC = 750 mAdc, IB = 75 mAdc
IC = 750 mAdc, IB = 40 mAdc
Base-Emitter Voltage
IC = 750 mAdc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 5.0 mAdc, VCB = 28 Vdc
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 12 Vdc; RC = 15.9 W; IB0 = IB2 = 35 mAdc; IB1= 65 mAdc
(3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
1.20
0.75
2N1483, 2N1484
2N1485, 2N1486
VCE(sat)
Vdc
Vdc
2.0
VBE
f
600
kHz
pF
hfb
400
25
Cobo
ton + toff
ms
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
This datasheet has been download from:
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