JANTXV2N1613 [MICROSEMI]
NPN LOW POWER SILICON TRANSISTOR; NPN小功率硅晶体管
| 型号： | JANTXV2N1613 |
| 厂家： | 
Microsemi |
| 描述： | NPN LOW POWER SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
DEVICES
LEVELS
JAN
2N718A
2N1613
2N1613L
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Min.
30
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
75
Vdc
7.0
500
Vdc
mAdc
TO-18 (TO-206AA)
2N718A
Total Power Dissipation
@ TA = +25°C
2N718A
2N1613, L
0.5
0.8
PT
W
Total Power Dissipation
@ TC = +25°C
2N718A
2N1613, L
1.8
3.0
PT
W
°C
Operating & Storage Junction Temperature Range
TJ, Tstg
RθJC
-65 to +200
Thermal Resistance, Junction-to-Case 2N718A
2N1613, L
97
58
°C/W
(1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for TA > +25°C
(2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for TC > +25°C
TO-39 (TO-205AD)
2N1613
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 100µAdc
V(BR)CEO
V(BR)CER
30
50
Vdc
Vdc
Collector-Emitter Breakdown Voltage
IC = 100µAdc, RBE = 10Ω
Collector-Base Cutoff Current
10
10
ηAdc
µAdc
V
CB = 60Vdc
ICBO
VCB = 75Vdc
Emitter-Base Cutoff Current
TO-5
2N1613L
10
10
ηA dc
µAdc
V
V
EB = 5.0Vdc
EB = 7.0Vdc
IEBO
T4-LDS-0200 Rev. 1 (110597)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
20
35
40
20
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
IC = 500mAdc, VCE = 10Vdc
hFE
120
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VCE(sat)
1.5
1.3
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50mAdc, VCE = 10Vdc, f = 20MHz
|hfe|
3.0
Small-Signal Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz
30
35
100
150
hfe
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
Small-Signal Short Circuit Input Impedance
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz
4.0
8.0
1.0
25
hib
hob
Ω
ηΩ
pF
Small-Signal Short Circuit Output Admittance
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Cobo
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time & Turn-Off Time
(See Figure 5 of MIL-PRF-19500/181)
ton + toff
30
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
T4-LDS-0200 Rev. 1 (110597)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Millimeters
Symbol
Inches
Notes
Min
.178
.170
.209
Max
Min
Max
4.95
5.33
5.84
CD
CH
HD
LC
LD
LL
LU
L1
.195
.210
.230
4.52
4.32
5.31
.100 TP
.016
2.54 TP
5
8, 9
7, 9
4, 8, 9
9
.021
.750
.019
.050
0.41
12.70
0.41
0.53
19.05
0.48
.500
.016
1.27
L2
.250
.028
.036
.100
6.35
0.71
.91
9
TL
TW
P
.048
.046
1.22
1.17
5
2.54
3
6
Q
.030
.010
0.76
.025
R
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010
inch (0.254 mm).
4. (Three leads) LU applies between L1 and L2. LD applies between L2 and .5 inch (12.70 mm) from seating plane.
Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane.
5. Measured from maximum diameter of the actual device.
6. Details of outline in this zone optional.
7. The collector shall be electrically connected to the case.
8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
9. All three leads.
10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Physical dimensions 2N718A (TO-18).
T4-LDS-0200 Rev. 1 (110597)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Dimensions
Symbol
Notes
Inches
Millimeters
Min
.240
Max
.260
Min
Max
6.60
CH
LC
LD
LL
LU
L1
L2
HD
CD
P
6.10
.200 TP
.021
5.08 TP
7
.016
.016
0.41
0.53
8, 9
See notes 12 and 13
.019
.050
0.41
0.48
1.27
8, 9
8, 9
8, 9
.250
.335
.305
.100
6.35
8.51
7.75
2.54
.370
.335
9.40
8.51
6
5
Q
.050
.010
.045
.034
1.27
0.25
1.14
0.86
r
TL
TW
α
.029
.028
0.74
0.71
4
7
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may
be measured by direct methods or by the gauging procedure.
8. LU applies between L1 and L2. LU applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond
LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. For transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum.
13. For transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum.
14. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
FIGURE 2. Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39).
T4-LDS-0200 Rev. 1 (110597)
Page 4 of 4
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