JANTXV2N2221A [MICROSEMI]

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN;
JANTXV2N2221A
型号: JANTXV2N2221A
厂家: Microsemi    Microsemi
描述:

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN

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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/255  
DEVICES  
LEVELS  
2N2221A  
2N2221AL  
2N2221AUA  
2N2221AUB  
2N2221AUBC *  
2N2222A  
2N2222AL  
2N2222AUA  
2N2222AUB  
2N2222AUBC *  
JAN  
JANTX  
JANTXV  
JANS  
* Available to JANS quality level only.  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
VCEO  
VCBO  
VEBO  
IC  
50  
75  
Vdc  
Vdc  
Vdc  
mAdc  
W
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
Collector Current  
800  
TO-18 (TO-206AA)  
2N2221A, 2N2222A  
Total Power Dissipation @ TA = +25°C  
Operating & Storage Junction Temperature Range  
PT  
0.5  
Top, Tstg  
-65 to +200  
°C  
THERMAL CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Max.  
Unit  
Thermal Resistance, Junction-to-Ambient  
2N2221A, L  
2N2221AUA  
2N2221AUB, UBC  
2N2222A, L  
2N2222AUA  
2N2222AUB, UBC  
325  
210  
325  
°C/W  
RθJA  
4 PIN  
2N2221AUA, 2N2222AUA  
Note: Consult 19500/255 for thermal performance curves.  
1. Derate linearly 3.08mW/°C above TA > +37.5°C  
2. Derate linearly 4.76mW/°C above TA > +63.5°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
ICBO  
50  
Vdc  
3 PIN  
2N2221AUB, 2N2222AUB  
2N2221AUBC, 2N2222AUBC  
(UBC = Ceramic Lid Version)  
Collector-Base Cutoff Current  
VCB = 75Vdc  
10  
10  
μAdc  
ηAdc  
V
CB = 60Vdc  
Emitter-Base Cutoff Current  
EB = 6.0Vdc  
V
IEBO  
10  
10  
μAdc  
ηAdc  
VEB = 4.0Vdc  
Collector-Emitter Cutoff Current  
VCE = 50Vdc  
ICES  
50  
ηAdc  
T4-LDS-0060 Rev. 2 (100247)  
Page 1 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
ON CHARACTERISTICS (2)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 0.1mAdc, VCE = 10Vdc  
2N2221A, L, UA, UB, UBC  
2N2222A, L, UA, UB, UBC  
30  
50  
IC = 1.0mAdc, VCE = 10Vdc  
IC = 10mAdc, VCE = 10Vdc  
IC = 150mAdc, VCE = 10Vdc  
2N2221A, L, UA, UB, UBC  
2N2222A, L, UA, UB, UBC  
35  
75  
150  
325  
2N2221A, L, UA, UB, UBC  
2N2222A, L, UA, UB, UBC  
40  
100  
hFE  
2N2221A, L, UA, UB, UBC  
2N2222A, L, UA, UB, UBC  
40  
100  
120  
300  
IC = 500mAdc, VCE = 10Vdc  
2N2221A, L, UA, UB, UBC  
2N2222A, L, UA, UB, UBC  
20  
30  
Collector-Emitter Saturation Voltage  
VCE(sat)  
Vdc  
Vdc  
IC = 150mAdc, IB = 15mAdc  
IC = 500mAdc, IB = 50mAdc  
0.3  
1.0  
Base-Emitter Voltage  
VBE(sat)  
IC = 150mAdc, IB = 15mAdc  
IC = 500mAdc, IB = 50mAdc  
0.6  
1.2  
2.0  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Small-Signal Short-Circuit Forward Current Transfer Ratio  
hfe  
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz  
2N2221A, L, UA, UB, UBC  
2N2222A, L, UA, UB, UBC  
30  
50  
Magnitude of Small–Signal Short-Circuit  
Forward Current Transfer Ratio  
|hfe|  
IC = 20mAdc, VCE = 20Vdc, f = 100MHz  
2.5  
Output Capacitance  
Cobo  
8.0  
25  
pF  
pF  
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz  
Input Capacitance  
Cibo  
VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Turn-On Time  
See figure 8 of MIL-PRF-19500/255  
ton  
35  
ηs  
Turn-Off Time  
See Figure 9 of MIL-PRF-19500/255  
toff  
300  
ηs  
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.  
T4-LDS-0060 Rev. 2 (100247)  
Page 2 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PACKAGE DIMENSIONS  
NOTES:  
1. Dimensions are in inches.  
Dimensions  
Inches Millimeters  
Symbol  
Note  
2. Millimeters are given for general information only.  
3. Beyond r (radius) maximum, TL shall be held for a minimum length  
of .011 inch (0.28 mm).  
4. Dimension TL measured from maximum HD.  
5. Body contour optional within zone defined by HD, CD, and Q.  
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)  
below seating plane shall be within .007 inch (0.18 mm) radius of  
true position (TP) at maximum material condition (MMC) relative to  
tab at MMC.  
Min  
Max  
.195  
.210  
.230  
Min  
4.52  
4.32  
5.31  
2.54 TP  
0.41  
Max  
4.95  
5.33  
5.84  
CD  
CH  
HD  
LC  
LD  
LL  
LU  
L1  
L2  
P
Q
TL  
TW  
r
.178  
.170  
.209  
.100 TP  
6
7,8  
.016  
.500  
.016  
.021  
.750  
.019  
.050  
0.53  
12.70 19.05 7,8,13  
0.41  
0.48  
1.27  
7,8  
7,8  
7,8  
7. Dimension LU applies between L1 and L2. Dimension LD applies  
between L2 and LL minimum. Diameter is uncontrolled in L1 and  
beyond LL minimum.  
.250  
.100  
6.35  
2.54  
.030  
.048  
.046  
.010  
0.76  
1.22  
1.17  
0.25  
5
3,4  
3
10  
6
8. All three leads.  
.028  
.036  
0.71  
0.91  
9. The collector shall be internally connected to the case.  
10. Dimension r (radius) applies to both inside corners of tab.  
11. In accordance with ASME Y14.5M, diameters are equivalent to φx  
symbology.  
α
45° TP  
45° TP  
1, 2, 9, 11, 12, 13  
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.  
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.  
and 1.75 inches (44.45 mm) max.  
FIGURE 1. Physical dimensions (similar to TO-18).  
T4-LDS-0060 Rev. 2 (100247)  
Page 3 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NOTES:  
Dimensions  
1. Dimensions are in inches.  
Inches  
Min  
.215  
Millimeters  
Symbol  
Note  
2. Millimeters are given for general information only.  
3. Dimension CH controls the overall package thickness. When a  
window lid is used, dimension CH must increase by a minimum of  
.010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).  
4. The corner shape (square, notch, radius) may vary at the  
manufacturer's option, from that shown on the drawing.  
5. Dimensions LW2 minimum and L3 minimum and the appropriate  
castellation length define an unobstructed three-dimensional space  
traversing all of the ceramic layers in which a castellation was  
designed. (Castellations are required on the bottom two layers,  
optional on the top ceramic layer.) Dimension LW2 maximum and  
L3 maximum define the maximum width and depth of the  
castellation at any point on its surface. Measurement of these  
dimensions may be made prior to solder dipping.  
Max  
.225  
.225  
.155  
.155  
.075  
.007  
.042  
.048  
.088  
.055  
.028  
.022  
Min  
5.46  
Max  
5.71  
5.71  
3.93  
3.93  
1.90  
0.18  
1.07  
1.22  
2.23  
1.39  
0.71  
0.56  
BL  
BL2  
BW  
BW2  
CH  
.145  
3.68  
.061  
.003  
.029  
.032  
.072  
.045  
.022  
.006  
1.55  
0.08  
0.74  
0.81  
1.83  
1.14  
0.56  
0.15  
3
5
L3  
LH  
LL1  
LL2  
LS  
LW  
LW2  
5
6. The co-planarity deviation of all terminal contact points, as defined  
by the device seating plane, shall not exceed .006 inch (0.15mm) for  
solder dipped leadless chip carriers.  
Pin no.  
Transistor Collector  
1
2
3
Base  
4
N/C  
Emitter  
7. In accordance with ASME Y14.5M, diameters are equivalent to φx  
symbology.  
FIGURE 2. Physical dimensions, surface mount (UA version).  
T4-LDS-0060 Rev. 2 (100247)  
Page 4 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
UB  
Dimensions  
Dimensions  
Symbol  
Inches  
Min  
.046  
.115  
.085  
Millimeters  
Min Max  
Note  
Inches  
Min  
.036  
.071  
.016  
Millimeters  
Symbol  
Note  
Max  
.056  
.128  
.108  
.128  
.108  
.038  
.035  
Max  
.040  
.079  
.024  
.008  
.012  
.022  
Min  
0.91  
1.81  
0.41  
Max  
1.02  
2.01  
0.61  
.203  
.305  
.559  
BH  
BL  
BW  
CL  
CW  
LL1  
LL2  
1.17  
2.92  
2.16  
1.42  
3.25  
2.74  
3.25  
2.74  
0.96  
0.89  
LS1  
LS2  
LW  
r
r1  
r2  
.022  
.017  
0.56  
0.43  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Hatched areas on package denote metalized areas.  
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.  
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.  
FIGURE 3. Physical dimensions, surface mount (UB version)  
T4-LDS-0060 Rev. 2 (100247)  
Page 5 of 6  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
UBC  
Dimensions  
Dimensions  
Symbol  
Inches  
Min  
.046  
.115  
.085  
Millimeters  
Min Max  
Note  
Inches  
Min  
.036  
.071  
.016  
Millimeters  
Symbol  
Note  
Max  
.071  
.128  
.108  
.128  
.108  
.038  
.035  
Max  
.040  
.079  
.024  
.008  
.012  
.022  
Min  
0.91  
1.81  
0.41  
Max  
1.02  
2.01  
0.61  
.203  
.305  
.559  
BH  
BL  
BW  
CL  
CW  
LL1  
LL2  
1.17  
2.92  
2.16  
1.80  
3.25  
2.74  
3.25  
2.74  
0.96  
0.89  
LS1  
LS2  
LW  
r
r1  
r2  
.022  
.017  
0.56  
0.43  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. Hatched areas on package denote metalized areas.  
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Connected to the lid braze ring.  
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.  
FIGURE 4. Physical dimensions, surface mount (UBC version, ceramic lid)  
T4-LDS-0060 Rev. 2 (100247)  
Page 6 of 6  

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