JANTXV2N2329S [MICROSEMI]

SILICON CONTROLLED RECTIFIER; 可控硅整流器


型号：	JANTXV2N2329S
厂家：	Microsemi
描述：	SILICON CONTROLLED RECTIFIER 可控硅整流器触发装置可控硅整流器
文件：	总2页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TECHNICAL DATA

SILICON CONTROLLED RECTIFIER

Qualified per MIL-PRF-19500/ 276

Devices

Qualified

Level

2N2323

2N2323S

2N2323A

2N2324

2N2324S

2N2324A

2N2326

2N2326S

2N2326A

2N2328

2N2328S

2N2328A

JAN

JANTX

JANTXV

2N2329

2N2329S

2N2323AS 2N2324AS 2N2326AS 2N2328AS

MAXIMUM RATINGS

2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/

2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S

Ratings

Reverse Voltage

Sym

2N2329,S Unit

V_RM

100

200

300

400

500

Vdc

Vpk

Adc

Vpk

⁰C

Working Peak Reverse Voltage V_RM

150

300

400

Forward Blocking Voltage

V_FBXM

I_O

50^(3/4)

100^(3/4)

200^(3/4)

0.22

300^(3/4)

400⁽³⁾

Average Forward Current ⁽¹⁾

Forward Current Surge Peak⁽²⁾I_FSM

Cathode-Gate Current

Operating Temperature

Storage Junction Temp

V_KGM

T_op

T_stg

-65 to +125

-65 to +150

⁰C

1) This average forward current is for an ambient temperature of 80⁰C and 180 electrical degrees of

conduction.

2) Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during

the first 5 ms after switching from the ‘off’ (blocking) to the ‘on’ (conducting) state. This is measured

from the point where the thyristor voltage has decayed to 90% of its initial blocking value.

3) Gate connected to cathode through 1,000 ohm resistor.

TO-5

4) Gate connected to cathode through 2,000 ohm resistor.

*See appendix A

for package outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

SUBGROUP 2 TESTING

Reverse Blocking Current

R₂= 1 km

2N2323 thru 2N2329

2N2323S thru 2N2329S

2N2323A thru 2N2328A

2N2323AS thru 2N2328AS

2N2323, S, A, AS

2N2324, S, A, AS

2N2326, S, A, AS

2N2328, S, A, AS

2N2329, S,

R₂= 2 km

mAdc

I_RBX1

V_R= 50 Vdc

V_R= 100 Vdc

V_R= 200 Vdc

V_R= 300 Vdc

V_R= 400 Vdc

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

Page 1 of 2

2N2323, A, AS, S; 2N2324, A, AS, S; 2N2326, A, AS, S; 2N2328, A, AS, S; 2N232, S JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

Forward Blocking Current

R₂= 1 kW

2N2323 thru 2N2329

2N2323S thru 2N2329S

2N2323A thru 2N2328A

2N2323AS thru 2N2328AS

2N2323, S, A, AS

R₂= 2 kW

I_FBX1

mAdc

V_R= 50 Vdc

V_R= 100 Vdc

2N2324, S, A, AS

V_R= 200 Vdc

2N2326, S, A, AS

V_R= 300 Vdc

2N2328, S, A, AS

V_R= 400 Vdc

2N2329, S

Reverse Gate Current

V_KG= 6 Vdc

I_KG

200

mAdc

Gate Trigger Voltage and Current

V₂= V_FBX= 6 Vdc; R_L= 100 W

R_e= 1 kW

Vdc

mAdc

Vdc

2N2323 thru 2N2329 and

2N2323S thru 2N2329S

2N2323A thru 2N2328A and

2N2323AS thru 2N2328AS

V_GT1

I_GT1

V_GT1

I_GT1

0.35

0.80

200

0.60

R_e= 2 kW

mAdc

SUBGROUP 4 TESTING

Exponential Rate of Voltage Rise T_A= 125⁰C

50 W £ R_L£ 400 W, C = 0.1 to 1.0 mF, repetition rate = 60 pps,

test duration = 15 seconds

dv/dt = 1.8 v/ms, R₃= 1 kW

2N2323 thru 2N2329 and

2N2323S thru 2N2329S

Vdc

dv/dt = 0.7 v/ms, R₃= 2 kW

2N2323A thru 2N2328A and

2N2323AS thru 2N2328AS

V_FBX

V_AA= 50 Vdc

V_AA= 100 Vdc

V_AA= 200 Vdc

V_AA= 300 Vdc

V_AA= 400 Vdc

Forward “on” Voltage

2N2323, S, A, AS

2N2324, S, A, AS

2N2326, S, A, AS

2N2328, S, A, AS

2N2329, S

190

285

380

V_FM

2.2

2.0

V(pk)

mAdc

i_FM= 4a (pk) (pulse), pulse width = 8.5 ms, max; duty cycle = 2% max

Holding Current

V_AA= 24 Vdc max, I_F1= 100 mAdc, I_F2= 10 mAdc

Gate trigger source voltage = 6 Vdc,

trigger pulse width = 25 ms min., R₂= 330 W

I_HOX

R₃= 1 kW

2N2323 thru 2N2329 and

2N2323S thru 2N2329S

R₃= 2 kW

2N2323A thru 2N2328A and

2N2323AS thru 2N2328AS

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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