JANTXV2N3468L [MICROSEMI]
PNP SILICON SWITCHING TRANSISTOR; PNP硅晶体管开关
| 型号： | JANTXV2N3468L |
| 厂家： | 
Microsemi |
| 描述： | PNP SILICON SWITCHING TRANSISTOR |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 348
Devices
Qualified Level
JAN
JANTX
JANTXV
2N3467
2N3467L
2N3468
2N3468L
MAXIMUM RATINGS
2N3467
2N3467L 2N3468L
2N3468
Ratings
Symbol
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
50
Vdc
Vdc
Vdc
Adc
VCEO
VCBO
VEBO
IC
TO-39* (TO-205AD)
2N3467, 2N3468
40
50
5.0
1.0
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
1.0
5.0
W
W
0C
PT
Operating & Storage Junction Temperature Range
-55 to +175
Top, T
stg
TO-5*
2N3467L, 2N3468L
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
40
50
Vdc
Vdc
Vdc
2N3467, L
2N3468, L
V(BR)
CBO
Emitter-Base Breakdown Current
IE = 10 mAdc
Collector-Emitter Breakdown Current
IC = 10 mAdc
V(BR)
EBO
5.0
40
50
2N3467, L
2N3468, L
V(BR)
CEO
Collector-Base Cutoff Current
VCB = 30 Vdc
Collector-Emitter Cutoff Current
VEB = 3.0 Vdc, VCE = 30
ICBO
ICEX
hAdc
100
100
nAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3467, L, 2N3468, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC =150 mAdc, VCE = 1.0 Vdc
2N3467, L
2N3468, L
40
25
hFE
IC = 500 mAdc, VCE = 1.0 Vdc
IC = 1.0 Adc, VCE = 5.0 Vdc
2N3467, L
2N3468, L
40
25
120
75
2N3467, L
2N3468, L
40
25
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
0.35
0.6
1.2
VCE(sat)
Vdc
Vdc
1.0
1.2
1.6
0.8
VBE(sat)
IC = 500 mAdc, IB = 50 mAdc
IC = 1.0 Adc, IB = 100 mAdc
DYNAMIC CHARACTERISTICS
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Extrapolated Unity Gain Frequency
IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz
25
pF
MHz
pF
Cobo
ft
175
150
500
500
2N3467, L
2N3468, L
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
100
Cibo
SWITCHING CHARACTERISTICS
IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2
IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2
td
tr
ts
tf
Delay Time
10
30
60
30
ns
ns
ns
ns
Rise Time
Storage Time
Fall Time
IC = 500 mAdc, IB1 = IB2 = 50 mAdc
IC = 100 mAdc, IB1 = IB2 = 50 mAdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明