JANTXV2N5303 [MICROSEMI]
NPN HIGH POWER SILICON TRANSISTOR; NPN大功率硅晶体管
| 型号： | JANTXV2N5303 |
| 厂家： | 
Microsemi |
| 描述： | NPN HIGH POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 456
Devices
Qualified Level
JANTX
JANTXV
2N5302
2N5303
MAXIMUM RATINGS
Ratings
Symbol 2N5302 2N5303 Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
80
Vdc
Vdc
Vdc
Adc
Adc
VCEO
VCBO
VEBO
IC
60
80
5.0
7.5
30
20
Base Current
IB
TO-3*
(TO-204AA)
Total Power Dissipation
@ TA = +250C(1)
@ TC = +1000C(2)
5.0
115
W
PT
W/0C
Operating & Storage Junction Temperature Range
-65 to +200
0C
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
0.875
R
qJC
1) Derate linearly 28.57 mW/0C for TA = +250C
2) Derate linearly 1.14 W/0C for TC = +1000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
Symbol
Min.
Max.
Unit
Vdc
60
80
IC = 200 mAdc, IB = 0
2N5302
2N5303
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 60 Vdc, IB = 0
VCE = 80 Vdc, IB = 0
10
10
mAdc
2N5302
2N5303
ICEO
Emitter-Base Cutoff Current
VEB = 5.0 Vdc, IC = 0
5.0
IEBO
mAdc
mAdc
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc, VCE = 60 Vdc
VBE = 1.5 Vdc, VCE = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc
5.0
5.0
2N5302
2N5303
ICEX
5.0
5.0
mAdc
2N5302
2N5303
ICBO
VCE = 80 Vdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N5302, 2N5303 JAN SERIES
Symbol
ELECTRICAL CHARACTERISTICS
Characteristics
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 15 Adc, VCE = 2.0 Vdc
IC = 10 Adc, VCE = 2.0 Vdc
IC = 30 Adc, VCE = 4.0 Vdc
IC = 20 Adc, VCE = 4.0 Vdc
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
All Types
2N5302
2N5303
2N5302
2N5303
40
15
15
5.0
5.0
60
60
hFE
All Types
2N5302
2N5303
2N5302
2N5303
1.7
1.8
2.0
2.5
2.5
IC = 15 Adc, IB = 1.5 Adc
IC = 15 Adc, IB = 1.5 Adc
IC = 20 Adc, IB = 2.0 Adc
IC = 20 Adc, IB = 4.0 Adc
Vdc
Vdc
VBE(sat)
Base-Emitter Non-Saturation Voltage
VCE = 2.0 Vdc; IC = 15 Adc
VCE = 2.0 Vdc; IC = 10 Adc
VCE = 4.0 Vdc; IC = 30 Adc
VCE = 4.0 Vdc; IC = 20 Adc
Collector-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 10 Adc, IB = 1.0 Adc
IC = 15 Adc, IB = 1.5 Adc
IC = 15 Adc, IB = 1.5 Adc
IC = 20 Adc, IB = 2.0 Adc
2N5302
2N5303
2N5302
2N5303
1.8
1.5
3.0
2.5
VBE
2N5302
2N5303
2N5302
2N5303
2N5302
2N5303
2N5302
0.75
1.0
1.0
1.5
2.0
2.0
3.0
Vdc
VCE(sat)
IC = 20 Adc, IB = 4.0 Adc
IC = 30Adc, IB = 6.0 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
2.0
40
½hfe½
800
pF
Cobo
td
tr
ts
tf
0.2
0.9
2.0
1.0
ms
ms
ms
ms
Rise Time
VCC = 30 Vdc; IC = 10 Adc; IB = 1.0 Adc
Storage Time
Fall Time
SAFE OPERATING AREA
DC Tests: TC = 250C, 1 Cycle, t ³ 1.0 s
Test 1
VCE = 6.67 Vdc, IC = 30 Adc
VCE = 10 Vdc, IC = 20 Adc
Test 2
2N5302
2N5303
VCE = 20 Vdc, IC = 10 Adc
Test 3
VCE = 40 Vdc, IC = 3.0Adc
Test 4
2N5302; 2N5303
2N5302; 2N5303
VCE = 50 Vdc, IC = 600 mAdc
VCE = 60 Vdc, IC = 600 mAdc
2N5302
2N5303
Clamped Switching: TA = 250C, VCE = 15 Vdc
Clamp Voltage = 60 Vdc, IC = 30 Adc
2N5302
Clamp Voltage = 80 Vdc, IC = 20 Adc
2N5303
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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