JANTXV2N6249 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | JANTXV2N6249 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 510
Devices
Qualified Level
JAN
2N6249
2N6251
2N6250
JANTX
JANTXV
JANHC
MAXIMUM RATINGS
2N6249 2N6250 2N6251
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Units
Vdc
200
300
275
375
6.0
10
350
450
Vdc
Vdc
Adc
Base Current
5.0
5.5
175
Adc
W
W
0C
IB
Total Power Dissipation @ TA = +250C (1)
PT
@ TC = +250C (2)
Operating & Storage Temp Range
-55 to +200
Top,
T
stg
THERMAL CHARACTERISTICS
Characteristics
TO-3 (TO-204AA)*
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1.0
R
qJC
1) Derate linearly at 34.2 mW/0C for TA > +250C
2) Derate linearly at 1.0 W/0C for TC > +250C
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; L = 42 mH; F = 30-60 Hz
(See Figure 3 of MIL-PRF-19500/510)
2N6249
2N6250
2N6251
200
275
350
Vdc
V(BR)
CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50W
(See Figure 3 of MIL-PRF-19500/510)
Vdc
V(BR)
2N6249
2N6250
2N6251
225
300
375
CER
Emitter-Base Cutoff Current
VEB = 6 Vdc
IEBO
mAdc
100
Collector-Emitter Cutoff Current
VCE = 150 Vdc
VCE = 225 Vdc
2N6249
2N6250
2N6251
1.0
1.0
1.0
mAdc
ICEO
VCE = 300 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6249, 2N6250, 2N6251 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 225 Vdc; VBE = -1.5 Vdc
VCE = 300 Vdc; VBE = -1.5 Vdc
VCE = 375 Vdc; VBE = -1.5 Vdc
Collector-Base Cutoff Current
VCB = 300 Vdc
VCB = 375 Vdc
VCB = 450 Vdc
ON CHARACTERISTICS(3)
Forward-Current Transfer Ratio
IC = 10 Adc; VCE = 3 Vdc
Symbol
Min.
Max.
Unit
2N6249
2N6250
2N6251
100
100
100
ICEX
mAdc
2N6249
2N6250
2N6251
0.5
0.5
0.5
mAdc
ICBO
10
8
6
50
50
50
2N6249
2N6250
2N6251
hFE
Collector-Emitter Saturated Voltage
IB = 1.0 Adc; IC = 10 Adc
IB = 1.25 Adc; IC = 10 Adc
IB = 1.67 Adc; IC = 10 Adc
Base-Emitter Saturated Voltage
IB = 1.0 Adc; IC = 10 Adc
2N6249
2N6250
2N6251
1.5
1.5
1.5
Vdc
Vdc
VCE(sat)
2N6249
2N6250
2N6251
2.25
2.25
2.25
VBE(sat)
IB = 1.25 Adc; IC = 10 Adc
IB = 1.67 Adc; IC = 10 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
½hfe½
IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz
Output Capacitance
VCB = 10 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
2.5
15
pF
Cobo
500
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 Vdc; IC = 10 Adc
IB = 1.0 Adc
ton
ms
2N6249
2N6250
2N6251
2.0
2.0
2.0
IB = 1.25 Adc
IB = 1.67 Adc
Turn-Off Time
VCC = 200 Vdc; IC = 10 Adc
IB = 1.0 Adc
toff
ms
2N6249
2N6250
2N6251
4.5
4.5
4.5
IB = 1.25 Adc
IB = 1.67 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C; t = 1 s, 1 cycle (See Figure 5 of MIL-PRF-19500/510)
Test 1
VCE = 17.5 Vdc, IC = 10 Adc
Test 2
VCE = 30 Vdc, IC = 5.8 Adc
Test 3
VCE = 100 Vdc, IC = 0.3 Adc
3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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