MC33164LP-TR [MICROSEMI]

Power Management Circuit, Fixed, +4.33VV;


型号：	MC33164LP-TR
厂家：	Microsemi
描述：	Power Management Circuit, Fixed, +4.33VV
文件：	总7页 (文件大小：197K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MC33164 / MC34164

5V UNDERVOLTAGE

SENSING

CIRCUIT

R O D U C T I O N

A T A

S H E E T

H E

N F I N I T E

O W E R O F

I N N O V A T I O N

KEY FEATURES

DESCRIPTION

The MC33164 and the MC34164 are

micropower undervoltage sensing circuits 10V input supply and drains <10µA in a

ideal for use in low-power battery faultless condition and a trip level of

output. This device operates from 1 to

LOW STANDBY CURRENT

TEMPERATURE

COMPENSATED BANDGAP

REFERENCE

PRECISION COMPARATOR

WITH 50MV OF

applications,

computer

peripheral, 4.33V. Both devices are available in an 8-

consumer, appliance and automotive pin, 150mil SOIC package and a plastic

equipment. The device offers a 1.2V TO-92 package. The MC33164 is rated

HYSTERESIS

temperature

compensated

bandgap from -40°C to 85°C and the MC34164

CLAMP DIODE FOR

DISCHARGING DELAY

CAPACITOR

reference, a precision comparator with from 0°C to 70°C.

hysteresis and a high current open collector

OUTPUT CURRENT SINK

CAPABILITY FROM 7 TO

50MA

1-10V INPUT SUPPLY

RANGE

AVAILABLE IN 150MIL, 8-

PIN SOIC AND PLASTIC

TO-92 PACKAGES

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

PRODUCT HIGHLIGHT

LOW-VOLTAGE

MICROPROCESSOR

RESET

PIN-FOR-PIN COMPATIBLE

WITH MC33164 / 34164

RESET

MICROPROCESSOR

CIRCUIT

POWER

SUPPLY

C_DLY

APPLICATIONS

µPOWER RESET

GENERATOR

5V VOLTAGE MONITOR

BATTERY-LEVEL

DETECTOR

1.2 V_REF

PACKAGE ORDER INFO

Plastic SOIC

8-Pin

RoHS Compliant / Pb-free

Transition DC: 0440

Plastic TO-92

3-Pin

RoHS Compliant / Pb-free

Transition DC: 0509

T_A(°C)

0 to 70

-40 to 85

MC34164DM

MC33164DM

MC34164LP

MC33164LP

Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e.

MC33164DM-TR)

I N

I N I T Y

I C R O E L E C T R O N I C S

I N C .

Rev. 1.5a,2005-03-09

11861 WESTERN

VENUE, GARDEN GROVE, CA. 92841, 714-898-8121, FAX: 714-893-2570

P R O D U C T D A T A B O O K 1 9 9 6 / 1 9 9 7

MC33164/MC34164

5 V U N D E R V O L T A G E

E N S I N G

I R C U I T

P R O D U C T I O N D A T A S H E E T

ABSOLUTE MAXIMUM RATINGS (Note 1)

PACKAGE PIN OUTS

Input Supply Voltage (V_IN)............................................................................... -1V to 12V

RESET Output Voltage (V_OUT) ..........................................................................-1V to 12V

Clamp Diode Forward Current .............................................................................. 100mA

Operating Junction Temperature

N.C.

RESET

INPUT

N.C.

GROUND

Plastic (DM - Package) ......................................................................................... 150°C

Storage Temperature Range......................................................................-65°C to 150°C

Lead Temperature (Soldering, 10 seconds)............................................................ 300°C

Peak Package Solder Reflow Temp.(40 second max. exposure)......................................260°C (+0, -5)

DM PACKAGE

(Top View)

RoHS / Pb-free 100% Matte Tin Lead Finish

Note 1. Values beyond which damage may occur. All voltages are specified with respect to

ground, and all currents are positive into the specified terminal.

3. GROUND

2. INPUT

THERMAL DATA

1. RESET

DM PACKAGE:

THERMAL RESISTANCE-JUNCTION TO AMBIENT, θ_JA

LP PACKAGE:

165°C/W

156°C/W

LP PACKAGE

(Top View)

THERMAL RESISTANCE-JUNCTION TO AMBIENT, θ_JA

Junction Temperature Calculation: T_J= T_A+ (P_Dx θ_JA).

The θ_JAnumbers are guidelines for the thermal performance of the device/pc-board system.

All of the above assume no ambient airflow.

BLOCK DIAGRAM

INPUT

2(2)

RESET

1(1)

1.2 V_REF

4(3)

GROUND

Rev. 1.5a 9/17/2004

P R O D U C T D A T A B O O K 1 9 9 6 / 1 9 9 7

MC33164/MC34164

5 V U N D E R V O L T A G E S E N S I N G C I R C U I T

P R O D U C T I O N D A T A S H E E T

RECOMMENDED OPERATING CONDITIONS

(Note 2)

Recommended Operating Conditions

Parameter

Symbol

Units

Min.

Typ.

Max.

Input Supply Voltage

RESET Output Voltage

Clamp Diode Forward Current

Operating Ambient Temperature Range:

MC34164

T_A

°C

MC33164

-40

Note 2. Range over which the device is guaranteed functional.

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, these specifications apply over the operating ambient temperatures of 0°C ≤ T_A≤ 70°C for the MC34164 and -40°C ≤ T ≤ 85°C

for the MC33164. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperatu^Are.)

MC33164 / MC34164

Parameter

Total Device

Symbol

Test Conditions

Units

Min. Typ.

Max.

1.0

µA

Operating Input Voltage Range

Quiescent Input Current

V_IN

I_IN

V_IN= 5.0V

V_IN= 10V

Comparator Section

Threshold Voltage

High-State Output

Low-State Output

Hysteresis

4.15

0.02

4.33

4.27

0.06

4.45

V_IH

V_IL

V_H

V_INIncreasing

V_INDecreasing

RESET Output Section

Output Sink Saturation

V_OL

V_IN= 4.0V, I_SINK= 1.0mA

V_IN= 1.0V, I_SINK= 0.25mA

V_IN, RESET = 4.0V

0.05

0.06

0.40

0.30

Output Sink Current

Output Off-State Leakage

I_SINK

7.0

0.6

µA

V_IN, RESET = 5.0V

0.5

V_IN, RESET = 10V

Pin 1 to pin 2, (I_F= 5.0mA)

2.0

1.2

Clamp Diode Forward Voltage

V_F

Rev. 1.5a 9/17/2004

P R O D U C T D A T A B O O K 1 9 9 6 / 1 9 9 7

MC33164/MC34164

5 V U N D E R V O L T A G E

E N S I N G

I R C U I T

P R O D U C T I O N D A T A S H E E T

GRAPH / CURVE INDEX

FIGURE INDEX

Characteristic Curves

Application Circuits

FIGURE #

1. COMPARATOR THRESHOLD VOLTAGE vs. TEMPERATURE

2. RESET OUTPUT VOLTAGE vs. INPUT VOLTAGE

3. RESET OUTPUT SATURATION vs. SINK CURRENT

4. INPUT CURRENT vs. INPUT VOLTAGE

7. SWITCHING THE LOAD OFF WHEN BATTERY REACHES BELOW 4.3V

8. LOW VOLTAGE MICROPROCESSOR RESET

9. VOLTAGE MONITOR

10. MOSFET LOW VOLTAGE GATE DRIVE PROTECTION

5. RESET DELAY TIME (LOW to HIGH)

6. RESET DELAY TIME (HIGH to LOW)

Rev. 1.5a 9/17/2004

P R O D U C T D A T A B O O K 1 9 9 6 / 1 9 9 7

MC33164/MC34164

5 V U N D E R V O L T A G E S E N S I N G C I R C U I T

P R O D U C T I O N D A T A S H E E T

CHARACTERISTIC CURVES

FIGURE 1. — COMPARATOR THRESHOLD VOLTAGE

vs. TEMPERATURE

FIGURE 2. — RESET OUTPUT VOLTAGE

vs. INPUT VOLTAGE

R_L= 43K to V_IN

4.45

4.40

4.35

4.30

4.25

4.20

4.15

R_L= 82K to V_IN

8.0

T_A= 25°C

Upper Threshold

High State Output

6.0

4.0

Lower Threshold

Low State Output

2.0

4.0

6.0

8.0

-50

-25

100 125

Junction Temperature - (°C)

Input Voltage - (V)

FIGURE 3. — RESET OUTPUT SATURATION

FIGURE 4. — INPUT CURRENT vs. INPUT VOLTAGE

vs. SINK CURRENT

500

R_L= ¥

T_A= 25°C

140

V_IN= 4V

400

T_A= 25°C

120

100

300

200

100

(I_SINK) Sink Current - (mA)

Input Voltage - (V)

Rev. 1.5a 9/17/2004

P R O D U C T D A T A B O O K 1 9 9 6 / 1 9 9 7

MC33164/MC34164

5 V U N D E R V O L T A G E

E N S I N G

I R C U I T

P R O D U C T I O N D A T A S H E E T

CHARACTERISTIC CURVES

FIGURE 5. — RESET DELAY TIME (LOW TO HIGH)

FIGURE 6. — RESET DELAY TIME (HIGH TO LOW)

V_IN

43K

RESET

43K

RESET

REF

100%

V_IN= 4.0V to 5.0V

R_L= 43K

T_A= 25°C

V_IN= 4.0V to 5.0V

R_L= 43K

T_A= 25°C

2µs/DIV.

0.5µs/DIV.

Rev. 1.5a 9/17/2004

P R O D U C T D A T A B O O K 1 9 9 6 / 1 9 9 7

MC33164/MC34164

5 V U N D E R V O L T A G E S E N S I N G C I R C U I T

P R O D U C T I O N D A T A S H E E T

TYPICAL APPLICATION CIRCUITS

RESET MICROPROCESSOR

CIRCUIT

POWER

SUPPLY

C_DLY

LOAD

RESET

1.2 V_REF

A time delayed reset can be accomplished with the addition of C_DLY

For systems with extremely fast power supply rise times (< 500ns) it

is recommended that the RC_DLYtime constant be greater than 5.0µs.

V_TH(MPU)is the microprocessor reset input threshold.

V_TH(MPU)

V_IN

t_DLY= R C_DLYIn

1 -

FIGURE 7. — SWITCHING THE LOAD OFF WHEN

FIGURE 8. — LOW-VOLTAGE MICROPROCESSOR RESET

BATTERY VOLTAGE REACHES BELOW 4.3V

V_CC

270

R_L

4.3V

SMP60N03-10L

1.0k

POWER

SUPPLY

RESET

1.2 V_REF

Overheating of the logic level power MOSFET due to insufficient

gate voltage can be prevented with the above circuit. When the

input signal is below the 4.3 volt threshold of the MC34164, its

output grounds the gate of the L²MOSFET.

FIGURE 9. — VOLTAGE MONITOR

FIGURE 10. — MOSFET LOW-VOLTAGE GATE DRIVE PROTECTION

Rev. 1.5a 9/17/2004

MC33164LP-TR [MICROSEMI]

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