MLL977C-1E3
更新时间:2024-09-18 16:45:17
品牌:MICROSEMI
描述:Zener Diode, 47V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2
MLL977C-1E3 概述
Zener Diode, 47V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 齐纳二极管
MLL977C-1E3 规格参数
是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-213AA | 包装说明: | O-XELF-R2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.6 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JEDEC-95代码: | DO-213AA | JESD-30 代码: | O-XELF-R2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 0.48 W | 认证状态: | Not Qualified |
标称参考电压: | 47 V | 表面贴装: | YES |
技术: | ZENER | 端子面层: | MATTE TIN |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 最大电压容差: | 2% |
工作测试电流: | 2.7 mA | Base Number Matches: | 1 |
MLL977C-1E3 数据手册
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PDF下载1N957B, -1 thru 1N992B, -1 DO-35
Silicon 500 mW Zener Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The popular 1N957B thru 1N992B series of 0.5 watt Zener Voltage
Regulators provides a selection from 6.8 to 200 volts in standard 5% or
10% tolerances as well as tighter tolerances identified by different suffix
letters on the part number. These glass axial-leaded DO-35 Zeners are
also available with an internal-metallurgical-bond option by adding a “-1”
suffix. The 1N962B-1 thru 1N992B-1 are available in JAN, JANTX, and
JANTXV military qualifications. Microsemi also offers numerous other
Zener products to meet higher and lower power applications.
DO-35
(DO-204AH)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
JEDEC registered 1N957B(-1) to 1N992B(-1) series
•
Regulates voltage over a broad operating
current and temperature range
Extensive selection from 6.8 to 200 V
Standard voltage tolerances are plus/minus 5%
with B suffix, 10 % with A suffix identification
Tight tolerances available in plus or minus 2%
or 1% with C or D suffix respectively
Internal metallurgical bond option available by
adding a “-1” suffix
•
•
•
Also available in JAN, JANTX, and JANTXV
qualifications per MIL-PRF-19500/117 by adding the
JAN, JANTX, or JANTXV prefixes to part numbers
for desired level of screening as well as “-1” suffix;
(e.g. JANTX1N962B-1, JANTXV1N986C-1, etc.)
•
•
•
Flexible axial-lead mounting terminals
•
•
•
Military Surface Mount equivalents also available in
DO-213AA by adding a UR-1 suffix in addition to the
JAN, JANTX, and JANTXV prefix; e.g.
Nonsensitive to ESD per MIL-STD-750 Method
1020
JANTX1N962BUR-1 (see separate data sheet)
•
•
Minimal capacitance (see Figure 3)
Commercial Surface Mount equivalents available as
MLL957B to MLL992B or with “-1” suffix for bonded
in the DO-213AA MELF style package (consult
factory for others)
Inherently radiation hard as described in
Microsemi MicroNote 050
DO-7 glass body axial-leaded Zener equivalents are
also available
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Operating and Storage temperature: -65ºC to
•
•
•
CASE: Hermetically sealed axial-lead glass
+175ºC
DO-35 (DO-204AH) package
• Thermal Resistance: 250 ºC/W junction to lead at 3/8
(10 mm) lead length from body, or 310ºC/W junction
to ambient when mounted on FR4 PC board (1 oz
Cu) with 4 mm2 copper pads and track width 1 mm,
length 25 mm
TERMINALS: Leads, tin-lead plated solderable
per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band. Diode
to be operated with the banded end positive
with respect to the opposite end for Zener
regulation
• Steady-State Power: 0.5 watts at TL < 50oC 3/8 inch
(10 mm) from body or 0.48 W at TA < 25ºC when
mounted on FR4 PC board as described for thermal
resistance above (also see Figure1)
•
•
MARKING: Part number
TAPE & REEL option: Standard per EIA-296
(add “TR” suffix to part number)
• Forward voltage @200 mA: 1.1 volts (maximum) for
•
•
WEIGHT: 0.2 grams
See package dimensions on last page
1N957B – 1N985B and 1.3 V for 1N985 – 1N992B
• Solder Temperatures: 260 ºC for 10 s (max)
Copyright 2003
10-31-2003 REV B
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N957B, -1 thru 1N992B, -1 DO-35
Silicon 500 mW Zener Diodes
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS* @ 25oC
NOMINAL
MAX. DC
ZENER
VOLTAGE
(Note 2)
ZENER
TEST
ZENER
CURRENT
(Note 4)
MAX. SURGE
CURRENT
(Note 5)
MAX. REVERSE
LEAKAGE
MAX. ZENER IMPEDANCE
(Note 3)
MAX. TEMP.
JEDEC
TYPE
COEFFICIENT
VZ
IZT
IZM
IZSM
IRCURRENT
@
VR
α
CURRENT
ZZT @ IZT
ZZK
@ IZK
NUMBER
(Note 1)
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
1N977B
1N978B
1N979B
1N980B
1N981B
1N982B
1N983B
1N984B
1N985B
1N986B
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
VZ
VOLTS
6.8
7.5
8.2
9.1
10
mA
18.5
16.5
15.0
14.0
12.5
11.5
10.5
9.5
OHMS
4.5
OHMS
700
mA
mA
55
mA
300
275
250
225
200
175
160
150
130
120
110
100
90
µA
150
75
50
25
10
5
VOLTS
5.2
%/oC
+0.05
1.0
.5
5.5
700
50
5.7
+0.058
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.083
+0.085
+0.086
+0.087
+0.088
+0.090
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.098
+0.098
+0.099
+0.11
6.5
700
.5
45
6.2
7.5
700
.5
41
6.9
8.5
700
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
38
7.6
11
9.5
700
32
8.4
12
11.5
13.0
16
700
31
5
9.1
13
700
28
5
9.9
15
8.5
700
25
5
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
16
7.8
17
700
24
5
18
7.0
21
750
20
5
20
6.2
25
750
18
5
22
5.6
29
750
16
5
24
5.2
33
750
15
80
5
27
4.6
41
750
13
70
5
30
4.2
49
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7100
8000
12
65
5
33
3.8
58
11
60
5
36
3.4
70
10
55
5
39
3.2
80
9.5
8.8
7.9
7.4
6.8
6.0
5.5
5.0
4.6
4.1
3.7
3.3
3.1
2.7
2.4
2.2
2.0
1.8
46
5
43
3.0
93
44
5
47
2.7
105
125
150
185
230
270
330
400
500
750
900
1100
1500
1700
2200
2500
40
5
51
2.5
37
5
56
2.2
35
5
62
2.0
30
5
68
1.8
28
5
75
1.7
26
5
82
1.5
23
5
91
1.4
21
5
100
110
120
130
150
160
180
200
1.3
18
5
1.1
16
5
+0.11
1.0
15
5
+0.11
0.95
0.85
0.80
0.68
0.65
13
5
+0.11
12
5
+0.11
11
5
+0.11
10
5
+0.11
9
5
+0.11
* JEDEC Registered Data
NOTE 1: The JEDEC type numbers shown (B suffix) have a +/-5% tolerance on nominal Zener voltage. The suffix A is used to identify +/-
10% tolerance; suffix C is used to identify +/-2%; and suffix D is used to identify +/-1% tolerance; no suffix indicates +/-20%
tolerance.
NOTE 2: Zener voltage (VZ) is measured after the test current has been applied for 20 +/- 5 seconds. The device shall be suspended by its
leads with the inside edge of the mounting clips between .375” and .500” from the body. Mounting clips shall be maintained at a
temperature of 25 +8/ -2oC.
NOTE 3: The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (IZT or
IZK) is superimposed on IZT or IZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve
and to eliminate unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.
NOTE 4: The values of IZM are calculated for a +/- 5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener
voltage above VZT which results from zener impedance and the increase in junction temperature as power dissipation approaches
400 mW. In the case of individual diodes IZM is that value of current which results in a dissipation of 400 mW at 75oC lead
temperature at 3/8” from body.
NOTE 5: The surge for IZSM is a square wave or equivalent half-sine wave pulse of 1/120 sec. duration.
Copyright 2003
10-31-2003 REV B
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N957B, -1 thru 1N992B, -1 DO-35
Silicon 500 mW Zener Diodes
S C O T T S D A L E D I V I S I O N
GRAPHS
Voltage Temperature
Coefficient %/oC
mV Change /ºC
TL – LEAD TEMPERATURE (oC) 3/8” FROM BODY or
TA on FR4 PC BOARD
NOMINAL ZENER VOLTAGE (VOLTS)
FIGURE 1
FIGURE 2
POWER DERATING CURVE
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
FIGURE 3
CAPACITANCE vs. ZENER VOLTAGE
(TYPICAL)
Copyright 2003
10-31-2003 REV B
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
MLL977C-1E3 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
MLL977CE3 | MICROSEMI | Zener Diode, 47V V(Z), 2%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL977D | MICROSEMI | Zener Diode, 47V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL977D-1E3 | MICROSEMI | Zener Diode, 47V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL977DE3 | MICROSEMI | Zener Diode, 47V V(Z), 1%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL978 | MICROSEMI | Zener Diode, 51V V(Z), 20%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL978-1E3 | MICROSEMI | Zener Diode, 51V V(Z), 20%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL978A | FCI | 2.4V to 110V MLL ZENER DIODES (1/2 Watt) | 获取价格 | |
MLL978A | MICROSEMI | Zener Diode, 51V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL978A-1E3 | MICROSEMI | Zener Diode, 51V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 | |
MLL978AE3 | MICROSEMI | Zener Diode, 51V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-213AA, MELF-2 | 获取价格 |
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