MM3Z5521BE3 [MICROSEMI]
Zener Diode, 4.3V V(Z), 5%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN;
| 型号： | MM3Z5521BE3 |
| 厂家： | 
Microsemi |
| 描述： | Zener Diode, 4.3V V(Z), 5%, 0.2W, Silicon, Unidirectional, SOD-323, 2 PIN |
| 文件： | 总2页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MM3Z5518 thru MM3Z5546
S C O T T S D A L E D I V I S I O N
LOW VOLTAGE AVALANCHE DIODE
PRODUCT PREVIEW
FEATURES
SOD323 PACKAGE
·
·
·
LOW ZENER NOISE SPECIFIED
LOW ZENER IMPEDANCE
LOW LEAKAGE CURRENT
·
SOD323 PACKAGE
MAXIMUM RATINGS
·
·
·
OPERATING TEMPERATURE: -55°CTO +150°C
STORAGE TEMPERATURE: -55°C TO +150°C
POWER: 200mW
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C
Unless otherwise specified
PACKAGE DIMENSIONS
B C D
SUFFIX
B C D SUFFIX
MAX. NOISE
DENSITY
MAX. REVERSE LEAKAGE
CURRENT
NOMINAL
MAX ZENER
REGULATION
FACTOR
LOW
ZENER
VOLTAGE
TEST
IMPEDANCE
MAXIMUM
DC ZENEER
PART
NUMBER
(NOTE 1)
VZ
CURRENT
IZL
DEVICE
MARKING
CURRENT B-C D SUFFIX
IZT
mAdc
AT I =250 µA
Z
?V
VR
-
VOLTS
Z
VZ @ IZ
ZZT @ IZT
IR
µAdc
T
CURRENT
IZM
mAdc
ND
VOLTS
VOLTS
OHMS
(NOTE 3)
(MICRO-VOLTS
PER SQUARE
ROOT CYCLE)
(NOTE 6)
mAdc
NON & A B C D
SUFFIX SUFFIX
(NOTE 2)
3.3
(NOTE 4)
5.0
(NOTE 5)
0.5
2.0
MM3Z5518
20
26
0.9
1.0
57.5
0.90
MM3Z5519
MM3Z5520
3.6
3.9
20
20
24
22
3.0
1.0
0.9
0.9
1.0
1.0
52.5
49.0
0.5
0.5
0.90
0.85
2.0
2.0
MM3Z5521
4.3
20
18
3.0
1.0
1.5
43.0
0.5
0.75
2.0
MM3Z5522
MM3Z5523
4.7
5.1
10
5.0
22
26
2.0
2.0
1.5
2.0
2.0
2.5
40.5
37.5
0.5
0.5
0.60
0.65
1.0
0.25
MM3Z5524
MM3Z5525
5.6
6.2
3.0
1.0
30
30
2.0
1.0
3.0
4.5
3.5
5.0
34.0
30.5
1.0
1.0
0.30
0.20
0.25
0.01
MM3Z5526
6.8
1.0
30
1.0
5.5
6.2
28.0
1.0
0.10
0.01
MM3Z5527
MM3Z5528
7.5
8.2
1.0
1.0
35
40
0.5
0.5
6.0
6.5
6.8
7.5
25.5
23.0
2.0
4.0
0.05
0.05
0.01
0.01
MM3Z5529
MM3Z5530
9.1
1.0
1.0
45
60
0.1
7.0
8.0
8.2
9.1
21.0
19.0
4.0
4.0
0.05
0.10
0.0 1
0.01
10.0
0.05
MM3Z5531
11.0
1.0
80
0.05
9.0
9.9
17.5
5.0
0.20
0.01
MM3Z5532
MM3Z5533
12.0
13.0
1.0
1.0
90
90
0.05
0.01
9.5
10.8
11.7
16.0
14.5
10
15
0.20
0.20
0.01
0.01
10.5
INCHES
DIM MIN MAX
MILLIMETERS
MM3Z5534
MM3Z5535
14.0
15.0
1.0
1.0
100
100
0.01
0.01
11.5
12.5
12.6
13.5
13.5
12.5
20
20
0.20
0.20
0.01
0.01
MIN
--
MAX
1.092
.102
.152
.406
.152
A
B
C
D
E
F
--
--
--
.043
.004
.006
MM3Z5536
16.0
1.0
100
0.01
13.0
14.4
12.0
20
0.20
0.01
--
--
MM3Z5537
MM3Z5538
17.0
18.0
1.0
1.0
100
100
0.01
0.01
14.0
15.0
15.3
16.2
11.0
10.5
20
20
0.20
0.20
0.01
0.01
.010 .016
.003 .006
.063 .075 1.600 1.905
.045 .057 1.143 1.448
.094 .106 2.388 2.692
.254
MM3Z5539
MM3Z5540
19.0
20.0
1.0
1.0
100
100
0.01
0.01
0.0
1
0.01
16.0
17.0
17.1
18.0
10.0
9.5
20
20
0.20
0.20
0.01
0.01
.076
G
H
MM3Z5541
22.0
1.0
100
18.0
19.8
8.5
20
0.20
0.01
MM3Z5542
MM3Z5543
24.0
25.0
1.0
1.0
100
100
20.0
21.0
21.6
22.4
8.0
7.5
20
20
0.30
0.35
0.01
0.01
0.01
MM3Z5544
MM3Z545
28.0
30.0
1.0
1.0
100
100
0.01
0.01
23.0
24.0
25.2
27.0
7.0
6.5
20
20
0.40
0.45
0.01
0.01
MM3Z5546
33.0
1.0
100
0.01
28.0
29.7
6.0
20
0.50
0.01
NOTES
TOLERANCE AND VOLTAGE DESIGNATION: The type part numbers shown are +/- 20 % with guaranteed limits for only VZ, IR and
VF. Units with A suffix are +/- 10% with guaranteed limits for only VZ, IR and VF. Units with guaranteed limits for all six parameters
are indicated by a B suffix for +/- 5.0% units. C suffix for +/- 2.0% and D suffix for +/- 1.0%.
1
ZENER (VZ) VOLTAGE MEASUREMENT: Nominal zener voltage is measured with the device junction in thermal equilibrium with
2
3
4
ambient temperature of 25°C at the specified current of IZT
.
ZENER IMPEDANCE (ZZ) DERIVATION: The zener impedance is derived from the 60 Hz voltage, which results when an ac current
having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT
.
REVERSE LEAKAGE CURRENT (IR):
Reverse leakage current is guaranteed and measured at VR as shown on the table.
MAXIMUM REGULATOR CURRENT (IZM): The maximum current shown is based on the maximum voltage of a 5.0% type unit;
therefore, it applies only to the B C, or D suffix devices. The actual IZM for any devices may not exceed the value of 200 milliwatts
divided by the actual VZ of the device.
5
6
MAXIMUM REGULATION FACTOR (?VZ): ?VZ is the maximum difference between Vz at IZT and VZ at IZL measured with the device
junction in thermal equilibrium.
Copyright ã 2001
MSCXXXX.PDF 02-12-2001 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
MM3Z5518 thru MM3Z5546
S C O T T S D A L E D I V I S I O N
LOW VOLTAGE AVALANCHE DIODE
PRODUCT PREVIEW
GRAPHS
500
400
100
60
40
300
200
20
10
8
100
0
25
50
75
100
125
150
175
200
4
TL Lead Temperature (°C)
POWER-TEMPERATURE
DERATING CURVE
2
1
0
20 40 60 80 100 120 140 160 180 200 220
Zener Voltage
CAPACITANCE VS. ZENER VOLTAGE
(TYPICAL)
FORWARD CHARACTERISTIC
VZ
REVERSE
VOLTAGE
(VOLTS)
?VZ
IZL
IZT
VF (VOLTS)
IR @ VR
REVERSE CHARACTERISTIC
IZM
ZENER DIODE CHARACTERISTICS
AND SYMBOL IDENTIFICATION
Copyright ã 2001
MSCXXXX.PDF 02-12-2001 REV A
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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