MQ1N6367TR [MICROSEMI]

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN;


型号：	MQ1N6367TR
厂家：	Microsemi
描述：	Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL, DO-13, 2 PIN 局域网二极管
文件：	总3页 (文件大小：165K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are

JEDEC registered selections for both unidirectional and bidirectional devices.

The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are

bi-directional where they all provide a very low specified clamping factor for

minimal clamping voltages (V_C) above their respective breakdown voltages

(V_BR) as specified herein. They are most often used in protecting sensitive

components from inductive switching transients or induced secondary

lightning effects as found in lower surge levels of IEC61000-4-5 . They are

also very successful in protecting airborne avionics and electrical systems.

Since their response time is virtually instantaneous, they can also protect

DO-13

(DO-202AA)

from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional and bidirectional TVS series for thru-hole

mounting

• Designed to protect Bipolar and MOS Microprocessor

based systems.

•

Suppresses transients up to 1500 watts @ 10/1000 µs

• Protection from switching transients and induced RF

• ESD and EFT protection per IEC 61000-4-2 and -4-4

_clamping(0 volts to V_(BR)min):

Unidirectional – Less than 100 pico seconds.

Bidirectional – Less than 5 nano seconds.

• Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

•

Working voltage (V_WM) range 5 V to 45 V

Class 1, 2 & 3 1N6356 to 1N6372

Class 4: 1N6356 to 1N6362

Low clamping factor (ratio of actual V_C/V_BR): 1.33 @

full rated power and 1.20 @ 50% rated power

• Secondary lightning protection per IEC61000-4-5 with

•

Hermetic sealed DO-13 metal package

12 Ohms source impedance:

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, JANTXV, and JANS are also available

by adding MQ, MX, MV, SP prefixes respectively to part

numbers, e.g. MX1N6356, etc.

Class 1 & 2: 1N6356 to 1N6372

Class 3: 1N6356 to 1N6362

Class 4: 1N6356 to 1N6358

• Secondary lightning protection per IEC61000-4-5 with

•

RoHS Compliant devices available by adding “e3” suffix

2 Ohms source impedance:

Surface mount equivalent packages also available as

SMCJ6356 – SMCJ6372 (consult factory for other

surface mount options)

Class 2: 1N6356 to 1N6361

Class 3: 1N6356 to 1N6358

• Inherently radiation hard per Microsemi MicroNote

•

Plastic axial-leaded equivalents available in the

1N6373 – 1N6389 series (see separate data sheet)

050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts for 10/1000 μs with repetition rate of 0.01% or

•

CASE: DO-13 (DO-202AA), welded, hermetically

sealed metal and glass

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

•

Operating & Storage Temperatures: -65^oto +175^oC

•

FINISH: All external metal surfaces are Tin-Lead or

RoHS Compliant annealed matte-Tin plating

solderable per MIL-STD-750 method 2026

THERMAL RESISTANCE: 50^oC/W junction to lead at

0.375 inches (10 mm) from body or 110 ^oC/W junction to

ambient when mounted on FR4 PC board with 4 mm²

copper pads (1 oz) and track width 1 mm, length 25 mm

POLARITY: Cathode connected to case and

polarity indicated by diode symbol

DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” or 10

mm from body (also see Figure 5)

•

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

•

Forward surge current: 200 Amps for 8.3ms half-sine

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

wave at T_A= +25^oC for unidirectional only (1N6356-6364)

Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

10-03-2007 REV C

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

ELECTRICAL CHARACTERISTICS @ 25^oC (Unidirectional)

MAXIMUM

CLAMPING

VOLTAGE

(Fig. 2)

MAXIMUM

CLAMPING

VOLTAGE

(Fig. 2)

@ I_PP2= 10A

V_C

VOLTS

7.5

11.5

14.1

MAXIMUM

REVERSE

LEAKAGE

@V_WM

MINIMUM*

BREAKDOWN

VOLTAGE

@ 1.0 mA

V_(BR)(min)

VOLTS

6.0

STAND-OFF

VOLTAGE

(NOTE 1)

V_WM

MAXIMUM

PEAK PULSE

CURRENT

_PP1= 1A

V_C

I_D

μA

300

MICROSEMI

I_PP3

160

100

PART NUMBER

VOLTS

7.1

1N6356

MPT-5

5.0

1N6357

1N6358

1N6359

1N6360

1N6361

1N6362

1N6363

1N6364

MPT-8

8.0

10.0

12.0

15.0

18.0

22.0

36.0

45.0

9.4

11.7

11.3

13.7

16.1

20.1

24.2

29.8

50.6

63.3

MPT-10

MPT-12

MPT-15

MPT-18

MPT-22

MPT-36

MPT-45

14.1

16.5

20.6

25.2

32.0

54.3

70.0

17.6

21.2

25.9

42.4

52.9

V_Fat 100 amps peak is 3.5 volts maximum at 8.3 ms half-sine wave.

ELECTRICAL CHARACTERISTICS @ 25^oC (Bidirectional)

MPT-5C

5.0

300

6.0

7.1

7.5

160

100

1N6365

1N6366

1N6367

1N6368

1N6369

1N6370

1N6371

1N6372

MPT-8C

8.0

9.4

11.4

14.1

16.7

20.8

24.8

30.8

50.6

63.3

11.6

14.5

17.1

21.4

25.5

32.0

54.3

70.0

MPT-10C

MPT-12C

MPT-15C

MPT-18C

MPT-22C

MPT-36C

MPT-45C

10.0

12.0

15.0

18.0

22.0

36.0

45.0

11.7

14.1

17.6

21.2

25.9

42.4

52.9

C Suffix indicates Bidirectional

NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (V_WM) which should be equal to or greater than the DC or

continuous peak operating voltage level.

* The minimum breakdown voltage as shown takes into consideration the + volt tolerance normally specified for power supply regulation on

most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated

power supply voltages are employed.

GRAPHS

FIGURE 1

FIGURE 2

Peak Pulse Power vs. Pulse Time

Typical Characteristic Clamping Voltage

vs. Peak Pulse Current

10-03-2007 REV C

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N6356 thru 1N6372, e3

or MPT-5 thru MPT-45C, e3

1500 W LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

Peak Value

I_PP

Pulse time duration (tp) is

defined as that point where

_Pdecays to 50% of peak

value (I_PP).

time (t) in milliseconds

FIGURE 4

FIGURE 3

Pulse wave form for exponential surge

Typical Capacitance vs. Breakdown Voltage

(Unidirectional Types)

PACKAGE DIMENSIONS

FIGURE 5

Typical Capacitance vs. Breakdown Voltage

(Bidirectional Types)

T_L– lead Temperature ^oC

FIG. 5 Steady-state power derating curve

10-03-2007 REV C

Microsemi

Page 3

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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