MQ6100A [MICROSEMI]
Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14;型号: | MQ6100A |
厂家: | Microsemi |
描述: | Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14 CD 二极管 |
文件: | 总2页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
6100A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 14-PIN package for use as steering
diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them
either to the positive side of the power supply line or to ground (see figure 1). An
external TVS diode may be added between the positive supply line and ground to
prevent overvoltage on the supply rail. They may also be used in fast switching core-
driver applications. This includes computers and peripheral equipment such as
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding
or encoding applications. These arrays offer many advantages of integrated circuits
such as high-density packaging and improved reliability. This is a result of fewer
pick and place operations, smaller footprint, smaller weight, and elimination of
various discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
14-PIN Ceramic
Flat Pack
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (See Circuit in
Figure 1)
•
•
•
•
•
•
•
Hermetic Ceramic Package
Isolated Diodes to Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 75 V at 5 μA
Low Leakage IR< 100 nA at 40 V
Low Capacitance C < 4.0 pF
Switching Speeds less than 10 ns
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX6100A for a JANTX screen.
61000-4-2 (ESD): Air 15 kV, contact – 8 kV
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A, 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
14-PIN Ceramic Flat Pack
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
Continuous Forward Current of 300 mA dc (Note 1 & 3)
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
400 mW Power Dissipation per Junction @ 25oC
Weight 0.29 grams (approximate)
Marking: Logo, part number, date code and
dot identifying pin #1
•
Carrier Tubes; 19 pcs (standard)
500 mW Power Dissipation per Package @ 25oC (Note 4)
Operating Junction Temperature range –65 to +150oC
Storage Temperature range of –65 to +150oC
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.0 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
MAXIMUM
REVERSE
RECOVERY TIME
trr
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
RECOVERY
TIME
MAXIMUM
FORWARD
VOLTAGE
MATCH
MAXIMUM
REVERSE
CURRENT
MAXIMUM
REVERSE
CURRENT
MAXIMUM
CAPACITANCE
(PIN TO PIN)
I = IR = 10 mAdc
F
V
F1
Ct
t
fr
i
= 1 mAdc
V
F5
rr
I = 100 mA
I
I
VR = 0 V
F = 1 MHz
pF
F
R1
R2
I = 100 mA
R = 100 ohms
I = 10 mA
PART
NUMBER
(Note 1)
V
VR = 40 V
µA
VR = 20 V
nA
F
L
F
ns
ns
mV
6100A
1
0.1
25
4.0
15
10
5
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
Copyright © 2007
3-27-2007
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
6100A
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VBR
DEFINITION
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VF
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Ct
SCHEMATIC
PACKAGE DIMENSIONS
CIRCUIT
Supply rail (+VCC)
Symbol
Inches
Max
Millimeters
I/O Port
Min
Min
Max
9.91
6.60
2.41
9.40
BL
BW
CH
LL
.390
.260
.095
.370
.235
.045
.250
.005
.026
5.97
1.14
6.35
0.13
0.66
GND (or -VCC)
LO
LO
.045
1.14
2
Steering Diode Application
LS
LT
LU
LW
.050 BSC
1.27 BSC
FIGURE 1
.003
.006
.280
.019
0.08
0.15
7.11
0.48
.010
0.25
Copyright © 2007
3-27-2007
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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