MQRT100KP110CAE3 [MICROSEMI]

Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2;
MQRT100KP110CAE3
元器件型号: MQRT100KP110CAE3
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

局域网二极管
PDF文件: 总4页 (文件大小:132K)
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型号参数:MQRT100KP110CAE3参数
是否Rohs认证 符合
生命周期Obsolete
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
HTS代码8541.10.00.50
风险等级5.27
最大击穿电压135 V
最小击穿电压122 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散100000 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散1.61 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压110 V
表面贴装NO
技术AVALANCHE
端子面层MATTE TIN
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
RT100KP33A thru RT100KP400CA, e3
SCOTTSDALE DIVISION
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS
PROTECTION
APPEARANCE
WWW .
Microsemi
.C
OM
DESCRIPTION
Microsemi’s 100 kW Transient Voltage Suppressors (TVSs) are designed
for aircraft applications requiring high power transient protection with a
comparatively small axial-leaded package size. This includes various
threats such as “Waveform 4” at 6.4/69 µs per
RTCA/DO-160E
Section 22.
It is also available with screening in accordance with MIL-PRF-19500 or
avionics screening as described in the Features section herein. It may also
be optionally acquired with RoHS Compliant (annealed matte-Tin finish)
with an e3 suffix added to the part number. Microsemi also offers a broad
spectrum of other TVSs to meet your needs.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Available in both Unidirectional and Bidirectional
construction (Bidirectional with CA suffix)
TVS selection for 33 to 400 V Standoff Voltages (V
WM
)
Suppresses transients up to
100 kW @ 6.4/69
μs
Fast response with less than 5 ns turn-on time.
Optional 100%
screening for avionics grade
is available
by adding
MA
prefix to part number for added 100%
temperature cycle -55
o
C to +125
o
C (10X), surge (3X) in
each direction, 24 hours HTRB in each direction, and post
test (V
BR
and I
D
)
Options for
screening
in accordance with MIL-PRF-19500
for JAN, JANTX,
and
JANTXV
are also available by adding
MQ, MX, or MV prefixes respectively to part numbers.
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B.
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protection from high power switching transients,
induced RF, and lightning threats with comparatively
small package size (0.25 inch diameter)
Protection from ESD and EFT per IEC61000-4-2 and
IEC61000-4-4
Pin injection protection per RTCA/DO-160E up to
Level 4 for Waveform 4 (6.4/69 µs) on all devices
Pin injection protection per RTCA/DO-160E up to
Level 5 for Waveform 4 (6.4/69 µs) on device types
RT100KP33A or CA up to RT100KP260A or CA
Pin injection protection per RTCA/DO-160E up to
Level 3 for Waveform 5A (40/120 µs) on all devices
Pin injection protection per RTCA/DO-160E up to
Level 4 for Waveform 5A (40/120 µs) on device types
RT100KP33A or CA up to RT100KP64A or CA
Consult Factory for other voltages with similar Peak
Pulse Power capabilities.
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25ºC: 100 kW at 6.4/69 µs
waveform in Figure 8 (also see figures 1 and 2)
Impulse repetition rate: 0.005%
t
clamping
(0 volts to V
BR
min): <100 ps theoretical for
unidirectional and <5 ns for bidirectional
Operating & storage temperatures: -65
o
C to +150
o
C
Thermal resistance: 17.5C/W junction to lead, or 77.5C/W
junction to ambient when mounted on FR4 PC board with 4
mm
2
copper pads (1 oz ) and track width 1 mm, length 25
mm
Steady-state power dissipation: 7 Watts @ T
L
= 27.5
o
C or
1.61 Watts at TA =25
o
C when mounted on FR4 PC Board
described for thermal resistance above
Forward surge: 250 Amps 8.3 ms half-sine wave for
unidirectional devices only
Solder Temperatures: 260
o
C for 10 s maximum
MECHANICAL & PACKAGING
CASE: Void free transfer molded thermosetting
epoxy meeting UL94V-O requirements
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
Polarity: Cathode marked with band for
unidirectional (no band required for bi-directional)
MARKING: Manufacturers logo and part number.
Add prefix MA, MQ, MX, etc., for screened parts.
WEIGHT: 1.7 grams (approximate)
TAPE & REEL option: Standard per EIA-296 for
axial package (add “TR” suffix to part number)
Package dimensions: See last page
RT100KP33A – 400CA, e3
Copyright
©
2007
10-03-2007 Rev B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
RT100KP33A thru RT100KP400CA, e3
SCOTTSDALE DIVISION
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS
PROTECTION
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS at 25ºC
Part
Number
(1) (4)
RT100KP33A
RT100KP36A
RT100KP40A
RT100KP43A
RT100KP45A
RT100KP48A
RT100KP51A
RT100KP54A
RT100KP58A
RT100KP60A
RT100KP64A
RT100KP70A
RT100KP75A
RT100KP78A
RT100KP85A
RT100KP90A
RT100KP100A
RT100KP110A
RT100KP120A
RT100KP130A
RT100KP150A
RT100KP160A
RT100KP170A
RT100KP180A
RT100KP200A
RT100KP220A
RT100KP250A
RT100KP260A
RT100KP280A
RT100KP300A
RT100KP350A
RT100KP400A
Rated
Stand-off
Voltage
V
WM
VOLTS
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
180
200
220
250
260
280
300
350
400
Breakdown Voltage
V
(BR)
Volts
@ I
(BR)
V
(BR)
I
(BR)
VOLTS
36.7-40.6
40.0-44.2
44.4-49.1
47.8-52.8
50.0-55.3
53.3-58.9
56.7-62.7
60.0-66.3
64.4-71.2
66.7-73.7
71.1-78.6
77.8-86.0
83.3-92.1
86.7-95.8
94.4-104
100-111
111-123
122-135
133-147
144-159
167-185
178-197
189-209
200-221
222-245
245-271
278-308
289-320
311-345
333-369
389-431
444-492
Maximum
Clamping
@ I
PP
(2)
V
C
VOLTS
58.6
61.8
68.6
71.0
73.0
77.7
82.8
87.5
94.0
97.3
104
114
122
126
137
146
162
178
193
209
243
259
275
291
322
356
403
419
451
483
564
644
mA
50
50
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Reverse
Leakage
@ V
WM
I
D
μAmps
5000
5000
1500
500
150
150
50
25
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Maximum
Peak Pulse
Current (3)
@6.4/69 µs
I
PP
Amps
1825 *
1672 *
1518 *
1432 *
1365 *
1285 *
1205 *
1139 *
1066 *
1012 *
959 *
879
819
793
726
686
619
559
519
473
413
386
366
346
313
280
246
236
220
206
176
153
Maximum
V
(BR)
temperature
Coefficient
α
V(BR)
o
mV/ C
38
41
46
50
52
56
60
63
68
71
76
83
89
93
102
109
121
133
145
157
183
195
207
219
243
269
306
318
344
368
430
490
1. For bidirectional construction, indicate a CA suffix (instead of A) after the part number
2. Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 µs rise time due to lead length.
3. The Maximum Peak Pulse Current (I
PP
) shown represents the performance capabilities by design.
* Surge test screening is only performed up to 900 Amps (test equipment limitations).
4. Part numbers in bold italics are preferred devices.
RT100KP33A – 400CA, e3
Copyright
©
2007
10-03-2007 Rev B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
RT100KP33A thru RT100KP400CA, e3
SCOTTSDALE DIVISION
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS
PROTECTION
WWW .
Microsemi
.C
OM
P
PP
Peak Pulse Power vs. Pulse Time – kW
Non-Repetitive Pulse
Peak Pulse Power (P
PP
) or continuous
o
Power in % of 25
C
rating
NOTE:
GRAPHS
versus
This P
PP
time graph allows the
designer to use these parts
over a broad power
spectrum using the
guidelines illustrated in
App Note 104 on
Microsemi’s website.
Aircraft transients are
described with exponential
decaying waveforms. For
suppression of square-
wave impulses, derate
power and current to 66%
of that for exponential
decay shown in Figure 1.
tp – Pulse Time – sec.
T
L
Lead Temperature
o
C
FIGURE 1
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
INSTALLATION
Correct
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
Figure 3 illustrates minimal parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
illustrated with figure 4.
The loss of
effectiveness in protection caused by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
FIGURE 2
POWER DERATING
Wrong
FIGURE 3
FIGURE 5
RT100KP33A – 400CA, e3
FIGURE 4
FIGURE 6
Copyright
©
2007
10-03-2007 Rev B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
RT100KP33A thru RT100KP400CA, e3
SCOTTSDALE DIVISION
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS
PROTECTION
WWW .
Microsemi
.C
OM
t
t – time
Note: frequency is 1MHz
t – time
t - Time
FIGURE 7 –
Waveform 3
FIGURE 8 –
Waveform 4
FIGURE 9 –
Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4
μs.
Equivalent peak pulse power at each of the pulse widths represented in
RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as Application Notes 104 and 120 (found on
Microsemi’s website) and are listed below.
WAVEFORM
NUMBER
PULSE WIDTH
μs
PEAK PULSE
POWER
kW
340
100
70
3
4
5A
4
6.4/69
40/120
Peak Pulse Current
Conversion Factor *
from Rated I
PP
at 6.4/69 µs
3.40x
1.00x
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated I
PP
in the Electrical Characteristics Table on page 2.
Note: High current fast rise-time transients of 250 ns or less can more than triple the V
C
from parasitic inductance effects (V= -Ldi/dt) compared to the
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.
Also see MicroNotes 127, 130, and 132 on the Microsemi website (Support section) for further information on Transient
Voltage Suppressors with reference to aircraft industry specification RTCA/DO-160E.
DIMENSIONS
RT100KP33A – 400CA, e3
Copyright
©
2007
10-03-2007 Rev B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
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