MQRT100KP220CAE3 [MICROSEMI]
Trans Voltage Suppressor Diode, 100000W, 220V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2;
| 型号： | MQRT100KP220CAE3 |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 100000W, 220V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2 局域网 二极管 |
| 文件： | 总4页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RT100KP33A thru RT100KP400CA, e3
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS PROTECTION
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
Microsemi’s 100 kW Transient Voltage Suppressors (TVSs) are designed
for aircraft applications requiring high power transient protection with a
comparatively small axial-leaded package size. This includes various
threats such as “Waveform 4” at 6.4/69 µs per RTCA/DO-160E Section 22.
It is also available with screening in accordance with MIL-PRF-19500 or
avionics screening as described in the Features section herein. It may also
be optionally acquired with RoHS Compliant (annealed matte-Tin finish)
with an e3 suffix added to the part number. Microsemi also offers a broad
spectrum of other TVSs to meet your needs.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Available in both Unidirectional and Bidirectional
construction (Bidirectional with CA suffix)
•
Protection from high power switching transients,
induced RF, and lightning threats with comparatively
small package size (0.25 inch diameter)
•
•
•
•
TVS selection for 33 to 400 V Standoff Voltages (VWM
Suppresses transients up to 100 kW @ 6.4/69 μs
Fast response with less than 5 ns turn-on time.
)
•
•
•
Protection from ESD and EFT per IEC61000-4-2 and
IEC61000-4-4
Pin injection protection per RTCA/DO-160E up to
Level 4 for Waveform 4 (6.4/69 µs) on all devices
Optional 100% screening for avionics grade is available
by adding MA prefix to part number for added 100%
temperature cycle -55oC to +125oC (10X), surge (3X) in
each direction, 24 hours HTRB in each direction, and post
test (VBR and ID)
Pin injection protection per RTCA/DO-160E up to
Level 5 for Waveform 4 (6.4/69 µs) on device types
RT100KP33A or CA up to RT100KP260A or CA
•
•
Pin injection protection per RTCA/DO-160E up to
Level 3 for Waveform 5A (40/120 µs) on all devices
•
Options for screening in accordance with MIL-PRF-19500
for JAN, JANTX, and JANTXV are also available by adding
MQ, MX, or MV prefixes respectively to part numbers.
Pin injection protection per RTCA/DO-160E up to
Level 4 for Waveform 5A (40/120 µs) on device types
RT100KP33A or CA up to RT100KP64A or CA
•
•
Moisture classification is Level 1 with no dry pack required
per IPC/JEDEC J-STD-020B.
•
Consult Factory for other voltages with similar Peak
Pulse Power capabilities.
RoHS Compliant devices available by adding “e3” suffix
MAXIMUM RATINGS
MECHANICAL & PACKAGING
•
Peak Pulse Power dissipation at 25ºC: 100 kW at 6.4/69 µs
waveform in Figure 8 (also see figures 1 and 2)
•
•
•
CASE: Void free transfer molded thermosetting
epoxy meeting UL94V-O requirements
FINISH: Tin-Lead or RoHS Compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
Polarity: Cathode marked with band for
•
•
Impulse repetition rate: 0.005%
tclamping (0 volts to VBR min): <100 ps theoretical for
unidirectional and <5 ns for bidirectional
Operating & storage temperatures: -65oC to +150oC
unidirectional (no band required for bi-directional)
•
•
•
MARKING: Manufacturers logo and part number.
Add prefix MA, MQ, MX, etc., for screened parts.
Thermal resistance: 17.5C/W junction to lead, or 77.5C/W
junction to ambient when mounted on FR4 PC board with 4
mm2 copper pads (1 oz ) and track width 1 mm, length 25
mm
Steady-state power dissipation: 7 Watts @ TL = 27.5oC or
1.61 Watts at TA =25 oC when mounted on FR4 PC Board
described for thermal resistance above
•
•
WEIGHT: 1.7 grams (approximate)
TAPE & REEL option: Standard per EIA-296 for
axial package (add “TR” suffix to part number)
•
•
Package dimensions: See last page
•
•
Forward surge: 250 Amps 8.3 ms half-sine wave for
unidirectional devices only
Solder Temperatures: 260oC for 10 s maximum
Copyright © 2007
10-03-2007 Rev B
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
RT100KP33A thru RT100KP400CA, e3
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS PROTECTION
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS at 25ºC
Maximum
V(BR)
Maximum
Clamping
@ IPP (2)
Maximum
Reverse
Leakage
@ VWM
ID
Maximum
Peak Pulse
Current (3)
@6.4/69 µs
IPP
Rated
Stand-off
Voltage
VWM
Breakdown Voltage
V
(BR) Volts
@ I(BR)
Part
Number
(1) (4)
temperature
Coefficient
αV(BR)
V(BR)
I(BR)
mA
VC
VOLTS
VOLTS
VOLTS
Amps
mV/oC
μAmps
RT100KP33A
RT100KP36A
RT100KP40A
RT100KP43A
RT100KP45A
RT100KP48A
RT100KP51A
RT100KP54A
RT100KP58A
RT100KP60A
RT100KP64A
RT100KP70A
RT100KP75A
RT100KP78A
RT100KP85A
RT100KP90A
RT100KP100A
RT100KP110A
RT100KP120A
RT100KP130A
RT100KP150A
RT100KP160A
RT100KP170A
RT100KP180A
RT100KP200A
RT100KP220A
RT100KP250A
RT100KP260A
RT100KP280A
RT100KP300A
RT100KP350A
RT100KP400A
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
180
200
220
250
260
280
300
350
400
36.7-40.6
40.0-44.2
44.4-49.1
47.8-52.8
50.0-55.3
53.3-58.9
56.7-62.7
60.0-66.3
64.4-71.2
66.7-73.7
71.1-78.6
77.8-86.0
83.3-92.1
86.7-95.8
94.4-104
100-111
111-123
122-135
133-147
144-159
167-185
178-197
189-209
200-221
222-245
245-271
278-308
289-320
311-345
333-369
389-431
444-492
50
50
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
58.6
61.8
68.6
71.0
73.0
77.7
82.8
87.5
94.0
97.3
104
114
122
126
137
146
162
178
193
209
243
259
275
291
322
356
403
419
451
483
564
644
5000
5000
1500
500
150
150
50
25
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1825 *
1672 *
1518 *
1432 *
1365 *
1285 *
1205 *
1139 *
1066 *
1012 *
959 *
879
819
793
726
686
619
559
519
473
413
386
366
346
313
280
246
236
220
206
176
153
38
41
46
50
52
56
60
63
68
71
76
83
89
93
102
109
121
133
145
157
183
195
207
219
243
269
306
318
344
368
430
490
10
1. For bidirectional construction, indicate a CA suffix (instead of A) after the part number
2. Clamping voltage does not include any variable parasitic lead inductance effects observed during the 6.4 µs rise time due to lead length.
3. The Maximum Peak Pulse Current (IPP) shown represents the performance capabilities by design.
* Surge test screening is only performed up to 900 Amps (test equipment limitations).
4. Part numbers in bold italics are preferred devices.
Copyright © 2007
10-03-2007 Rev B
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
RT100KP33A thru RT100KP400CA, e3
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS PROTECTION
S C O T T S D A L E D I V I S I O N
NOTE: This PPP versus
time graph allows the
designer to use these parts
over a broad power
spectrum using the
guidelines illustrated in
App Note 104 on
Microsemi’s website.
Aircraft transients are
described with exponential
decaying waveforms. For
suppression of square-
wave impulses, derate
power and current to 66%
of that for exponential
decay shown in Figure 1.
tp – Pulse Time – sec.
FIGURE 1
TL Lead Temperature oC
FIGURE 2
Peak Pulse Power vs. Pulse Time
To 50% of Exponentially Decaying Pulse
POWER DERATING
INSTALLATION
TVS devices used across power lines are
subject to relatively high magnitude surge
currents and are more prone to adverse
parasitic inductance effects in the mounting
leads. Minimizing the shunt path of the lead
inductance and their V= -Ldi/dt effects will
optimize the TVS effectiveness. Examples
of optimum installation and poor installation
are illustrated in figures 3 through figure 6.
Correct
Wrong
Figure
3
illustrates minimal parasitic
inductance with attachment at end of device.
Inductive voltage drop is across input leads.
Virtually no “overshoot” voltage results as
FIGURE 3
FIGURE 5
illustrated with figure 4.
The loss of
effectiveness in protection caused by
excessive parasitic inductance is illustrated
in figures 5 and 6. Also see MicroNote 111
for further information on “Parasitic Lead
Inductance in TVS”.
FIGURE 4
FIGURE 6
Copyright © 2007
10-03-2007 Rev B
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
RT100KP33A thru RT100KP400CA, e3
Preferred 100 kW Transient Voltage
Suppressor for AIRCRAFT POWER
BUS PROTECTION
S C O T T S D A L E D I V I S I O N
t
t – time
t – time
t - Time
Note: frequency is 1MHz
FIGURE 7 – Waveform 3
FIGURE 8 – Waveform 4
FIGURE 9 – Waveform 5A
NOTE: The 1MHz damped oscillatory waveform (3) has an effective pulse width of 4 μs. Equivalent peak pulse power at each of the pulse widths represented in
RTCA/DO-160E for waveforms 3, 4 and 5A (above) have been determined referencing Figure 1 herein as well as Application Notes 104 and 120 (found on
Microsemi’s website) and are listed below.
WAVEFORM
NUMBER
PULSE WIDTH
PEAK PULSE
POWER
Peak Pulse Current
Conversion Factor *
from Rated IPP
at 6.4/69 µs
3.40x
μs
kW
340
100
70
3
4
5A
4
6.4/69
40/120
1.00x
0.70x
* Multiply by the conversion factor shown with reference to the maximum rated IPP in the Electrical Characteristics Table on page 2.
Note: High current fast rise-time transients of 250 ns or less can more than triple the VC from parasitic inductance effects (V= -Ldi/dt) compared to the
clamping voltage shown in the initial Electrical Characteristics on page 1 as also described in Figures 5 and 6 herein.
Also see MicroNotes 127, 130, and 132 on the Microsemi website (Support section) for further information on Transient
Voltage Suppressors with reference to aircraft industry specification RTCA/DO-160E.
DIMENSIONS
Copyright © 2007
Microsemi
Page 4
10-03-2007 Rev B
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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