MQUPR15E3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2;
| 型号： | MQUPR15E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2 功效 光电二极管 |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UPR5e3, UPR10e3, UPR15e3
2.5 Amp High Efficiency Ultrafast Rectifier
KEY FEATURES
DESCRIPTION
The Microsemi UPR5e3, UPR10e3, and UPR15e3 Powermite® high
efficiency rectifiers are RoHS compliant and offers optimized forward
voltage characteristics with reverse blocking capabilities up to 150 Volts.
They are ideal for surface mount applications that operate at high
frequencies.
Low thermal resistance DO-216 package for
higher current operation
Utrasfast recovery time of 25 ns
RoHS Compliant with e3 suffix part number
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX, or
MV prefixes respectively to part numbers.
For example, designate MXUPR5e3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
In addition to its size advantages, Powermite® package features include a
full metallic bottom that eliminates possibility of solder flux entrapment
during assembly and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom). Its innovative design makes this
device ideal for use with automatic insertion equipment.
IMPORTANT: For themost current data, consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
APPLICATIONS/BENEFITS
VRWM
VRWM
VRWM
Working Peak Reverse Voltage UPR5e3
Working Peak Reverse Voltage UPR10e3
Working Peak Reverse Voltage UPR15e3
50
100
150
V
V
V
Switching and Regulating Power Supplies.
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Small 8.45 mm2 foot print
Average Rectified Output Current (at rated
VRWM, TC =75ºC)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half-sine wave
2.5
25
A
A
Io
(See mounting pad details next page)
IFSM
MECHANICAL & PACKAGING
Storage Temperature
Junction Temperature
-55 to +150
-55 to +150
ºC
ºC
TSTG
TJ
• CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
• FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
• POLARITY: See figure (left)
• MARKING: UPR5e3: R05•
UPR10e3: R10•
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to-case (bottom)
Junction-to-ambient (1)
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print
RθJC
RθJA
10
240
ºC/ Watt
ºC/ Watt
UPR15e3: R15•
• WEIGHT: 0.016 grams (approx.)
• Package dimension on last page
• Tape & Reel option: 12 mm tape per
Standard EIA-481-B, 3000 on 7 inch reel
and 12,000 on 13” reel
DO-216
See further details and dimensions on last page
Copyright © 2007
6-26-2007 Rev B
Microsemi
Page 1
UPR5e3, UPR10e3, UPR15e3
2.5 Amp High Efficiency Ultrafast Rectifier
ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
Parameter
Symbol Conditions
Min Typ.
Max Units
Forward Voltage (Note 1)
IF = 2.0 Amps
0.975
V
Forward Voltage (Note 1)
0.895
V
IF = 2.0 Amps, TJ = 100C
Reverse Current
Reverse Current
VR = VRWM, TJ = 25 ºC
VR = VRWM, TJ = 100 ºC
2.0
50
µA
µA
IR
IR
Reverse Recovery Time
25
ns
IF = 0.5 A; IR = 1.0 A: IREC = 0.25 A
trr
Note: 1 Short duration test pulse used to minimize self – heating effect.
PACKAGE & MOUNTING PAD DIMENSIONS
DO-216 Package (All dimensions +/-.005 inches)
MOUNTING PAD in inches
Copyright © 2007
6-26-2007 Rev B
Microsemi
Page 2
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