MRF544 [MICROSEMI]

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS; 射频与微波离散小功率三极管
MRF544
型号: MRF544
厂家: Microsemi    Microsemi
描述:

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
射频与微波离散小功率三极管

射频 微波
文件: 总6页 (文件大小:147K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MRF581  
MRF581G  
MRF581A  
MRF581AG  
*G Denotes RoHS Compliant, Pb free Terminal Finish  
RF & MICROWAVE DISCRETE  
LOW POWER TRANSISTORS  
Features  
Low Noise - 2.5 dB @ 500 MHZ  
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz  
Ftau - 5.0 GHz @ 10v, 75mA  
Cost Effective MacroX Package  
Macro X  
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
MRF581  
MRF581A  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
18  
15  
30  
2.5  
200  
Thermal Data  
P
Total Device Dissipation @ TC = 50ºC  
Derate above 50ºC  
2.5  
25  
Watts  
mW/ ºC  
D
P
Total Device Dissipation @ TC = 25ºC  
Derate above 25ºC  
1.25  
10  
Watts  
mW/ ºC  
D
Storage Junction Temperature Range  
Tstg  
-65 to +150  
150  
ºC  
ºC  
Maximum Junction Temperature  
TJmax  
Revision A- December 2008  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  
MRF581  
MRF581G  
MRF581A  
MRF581AG  
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)  
STATIC  
(off)  
Value  
Symbol  
Test Conditions  
Unit  
Min.  
Typ.  
Max.  
BVCEO  
Collector-Emitter Breakdown Voltage  
(IC = 5.0 mAdc, IB = 0)  
MRF581  
MRF581A  
18  
15  
-
-
Vdc  
Vdc  
Vdc  
mA  
mA  
BVCBO  
BVEBO  
ICBO  
Collector-Base Breakdown Voltage  
(IC = 1.0 mAdc, IE = 0)  
30  
2.5  
-
-
-
-
-
-
Emitter-Base Breakdown Voltage  
(IE = 0.1 mAdc, IC = 0)  
-
Collector Cutoff Current  
(VCB = 15 Vdc, VBE = 0 Vdc)  
0.1  
0.1  
IEBO  
Emitter Cutoff Current  
(Vbe = 2.5 Vdc)  
-
(on)  
HFE  
DC Current Gain  
(IC = 50 mAdc, VCE = 5.0 Vdc)  
MRF581  
MRF581A  
50  
90  
200  
250  
-
-
DYNAMIC  
Symbol  
COB  
Value  
Typ.  
Test Conditions  
Unit  
Min.  
Max.  
Output Capacitance  
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)  
2.0  
5.0  
3.0  
pF  
-
Ftau  
Current-Gain Bandwidth Product  
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)  
-
GHz  
-
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  
MRF581  
MRF581G  
MRF581A  
MRF581AG  
FUNCTIONAL  
Value  
Symbol  
Test Conditions  
Unit  
Min.  
Typ.  
Max.  
Noise Figure (50ohms)  
NF  
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)  
-
3.0  
3.5  
dB  
G
Power Gain @ NFmin  
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)  
NF  
13  
-
15.5  
17.8  
20  
dB  
dB  
dB  
dB  
G
Maximum Unilateral Gain (1)  
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz  
U max  
-
-
-
MSG  
Maximum Stable Gain  
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz  
-
2
Insertion Gain  
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz  
|S  
21  
|
14  
15  
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA  
f
S11  
S21  
S12  
S22  
(MHz)  
100  
|S11|  
.610  
|S21|  
23.8  
|S12|  
.026  
|S22|  
.522  
∠ φ  
-137  
∠ φ  
116  
∠ φ  
46  
∠ φ  
-78  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
.659  
.671  
.675  
.677  
.678  
.677  
.679  
.678  
.682  
-161  
-171  
-178  
176  
172  
168  
184  
160  
156  
13.2  
9.0  
6.8  
5.5  
4.6  
4.0  
3.5  
3.1  
2.8  
98  
89  
83  
77  
72  
68  
64  
60  
56  
.033  
.040  
.047  
.055  
.064  
.073  
.082  
.092  
.102  
47  
51  
55  
58  
61  
62  
63  
64  
65  
.351  
.304  
.292  
.293  
.299  
.306  
.314  
.322  
.311  
-106  
-120  
-128  
-132  
-134  
-135  
-136  
-138  
-139  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  
MRF581  
MRF581G  
MRF581A  
MRF581AG  
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor  
C7, C10 — 10 µF, Tantalum Capacitor  
RFC — VK–200, Ferroxcube  
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,  
TL3 — Microstrip 0.162, x 0.800,  
C2, C3 — 1.0–10 pF, Johanson Capacitor  
R1 — 1.0 kRes.  
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B  
TL2 — Microstrip 0.162, x 1.000,  
TL4 — Microstrip 0.162, x 0.440,  
TL6 — Microstrip 0.120, x 1.160,  
TL5 — Microstrip 0.120, x 0.440,  
TL9, TL10 — Microstrip 0.025, x 4.250,  
Board Material — 0.0625, Thick Glass Teflon ε r = 2.55  
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  
MRF581  
MRF581G  
MRF581A  
MRF581AG  
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide  
TO-39  
2N5109  
NPN 200  
3
10 15  
12 1200 3.5 20 400  
SO-8  
TO-39  
MRF4427, R2 NPN 175 0.15 18 60 12 20 400  
TO-39  
SO-8  
MRF5943C  
NPN 200 3.4 30 15  
11.4 1000  
15 1300  
17 900  
13 1600  
5.5 4600  
30 400  
30 400  
12 50  
15 40  
25 150  
2N4427  
MRF553  
MRF553T  
MRF607  
2N6255  
NPN 175  
1
10 50 12 20 400  
MRF5943, R1, R2 NPN 200 3.4 30 15  
POWER MACRO  
POWER MACRO  
TO-39  
NPN 175 1.5 11.5 60 12.5 16 500  
NPN 175 1.5 11.5 50 12.5 16 500  
NPN 175 1.75 11.5 50 12.5 16 330  
TO-72  
TO-72  
TO-39  
2N5179  
2N2857  
MRF517  
NPN 200 4.5 1.5  
NPN 300 5.5 50  
6
6
1
1
3
NPN 300 7.5 50 15  
TO-72  
TO-72  
MRF904  
2N6304  
BFR91  
BFR96  
NPN 450 1.5  
NPN 450  
NPN 500 1.9  
5
2
2
6
5
5
11 4000  
14 1400  
1
1
1
15 30  
15 50  
12 35  
TO-39  
NPN 175  
NPN 200  
3
7.8 50 12.5 18 1000  
20 12 50  
5
TO-72  
2N5179  
6
MACRO T  
MACRO T  
SO-8  
11 16.5 5000  
NPN 500  
2
2
2
10 10  
14.5 500 2.6 15 100  
MACRO X  
MACRO X  
TO-39  
SO-8  
POWER MACRO  
POWER MACRO  
MRF559  
MRF559  
2N3866A  
NPN 512 0.5  
NPN 512 0.5  
10 65 7.5 16 150  
13 60 12.5 16 150  
10 45 28 30 400  
10 45 28 30 400  
11 50 12.5 16 400  
11 50 12.5 16 400  
MRF5812, R1, R2 NPN 500  
50 10 15.5 17.8 5000  
15 200  
15 200  
15 30  
15 50  
12 40  
16 200  
MACRO X  
Macro  
MRF581A  
BFR90  
NPN 500  
50 10 14  
15 5000  
18 5000  
20 1300  
15 4500  
NPN 400  
1
1
NPN 500 2.4  
NPN 500 2.5  
NPN 500 2.5  
2
2
5
10 15  
1
TO-72  
BFY90  
5
MRF3866, R1, R2 NPN 400  
TO-72  
MRF914  
MRF581  
MRF586  
10  
MRF555  
MRF555T  
NPN 470 1.5  
NPN 470 1.5  
MACRO X  
TO-39  
NPN 500 2.5 50 10 15 17.8 5000  
NPN 500  
3
90 15 11 14.5 4500 2.2 17 200  
MACRO X  
MACRO X  
MACRO T  
MACRO T  
MRF951  
MRF571  
BFR91  
NPN 1000 1.3  
5
6
6
5
14  
10  
8
17 8000 0.45 10 100  
MACRO X  
MACRO X  
SO-8  
MRF559  
MRF559  
NPN 870 0.5 6.5 70 7.5 16 150  
NPN 870 0.5 9.5 65 12.5 16 150  
NPN 1000 1.5 10  
8000  
1
1
1
10 70  
12 35  
15 30  
NPN 1000 2.5  
2
2
11 5000  
MRF8372,R1,R2 NPN 870 0.75  
8
8
8
55 12.5 16 200  
55 12.5 16 400  
55 12.5 16 400  
BFR90  
NPN 1000  
3
10 10 12.5 5000  
POWER MACRO  
POWER MACRO  
MRF557  
MRF557T  
NPN 870 1.5  
NPN 870 1.5  
TO-39  
TO-39  
MRF545  
MRF544  
PNP  
NPN  
14 1400  
13.5 1500  
2
70 400  
70 400  
RF (LNA / General Purpose) Selection Guide  
RF (Low Power PA / General Purpose) Selection Guide  
Low Cost RF Plastic Package Options  
Power  
Macro T  
Macro X  
SO-8  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  
MRF581  
MRF581G  
MRF581A  
MRF581AG  
PIN 1. COLLECTOR  
2. EMITTER  
3. BASE  
1.  
4. EMITTER  
2.  
4.  
3.  
Microsemi reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at www.microsemi.com or contact our factory direct.  

相关型号:

SI9130DB

5- and 3.3-V Step-Down Synchronous Converters

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135LG-T1-E3

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9136_11

Multi-Output Power-Supply Controller

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY