MS2208 [MICROSEMI]
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION; 射频与微波晶体管航空电子应用
| 型号： | MS2208 |
| 厂家： | 
Microsemi |
| 描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION |
| 文件： | 总3页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS2208
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATION
Features
·
·
·
·
·
HERMETIC METAL/CERAMIC PACKAGE
LOW THERMAL RESISTANCE
10:1 LOAD VSWR CAPABILITY
BALLASTED OVERLAY GEOMETRY
COMMON EMITTER CONFIGURATION
DESCRIPTION:
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR
SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS
INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS
CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE
WIDTHS, DUTY CYCLES AND TEMPERATURES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Power Dissipation* (TC£100ºC)
Device Current *
Value
Unit
PDISS
1360
W
IC
VCC
TJ
27
55
A
V
Collector Supply Voltage*
Junction Temperature
250
°C
°C
TSTG
Storage Temperature
-65 to +200
Thermal Data
RTH(J-C)
Junction - Case Thermal Resistance
0.11
°C/W
*Applies only to rated RF amplifier operation
MSC0926.PDF 10-09-98
MS2208
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Bvebo
Bvcbo
Bvces
Ices
IE = 30 mA
IC = 50 mA
IC = 50 mA
VBE = 50 mA
VCE = 5.0 V
IC=0 mA
IC=0 mA
VBE=0 V
3.0
---
---
V
70
70
---
10
---
---
---
---
---
---
V
V
VCE=50 V
40
mA
B
HFE
IC=1 A
200
DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Pout
hc
Pin = 70W
Pout
f=1090 MHz
f=1090 MHz
f=1090 MHz
VCC=50V
VCC=50V
VCC=50V
500
---
---
W
40
---
---
---
---
%
GP
Pout
8.5
dB
Load
Mismatch
Pout =500W Peak f=1090 MHz, Vcc=50V, VSWR=10:1, 10msec, 1% Duty, VSWR=5:1, 32msec, 2% Duty
Pulse width=32msec, Duty Cycle= 2%
Conditions
IMPEDANCE DATA
FREQ
ZIN(W)
ZCL(W)
1030 MHz
1090 MHz
4.35+ j 6.97
4.38+ j 2.75
1.38- j 4.08
0.874- j 3.55
1.3- j 4.97
1120 MHz
PIN=70W
4.69+ j 2.95
VCC=50V
MSC0926.PDF 10-09-98
MS2208
PACKAGE MECHANICAL DATA
MSC0926.PDF 10-09-98
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