MSASC25H45KV [MICROSEMI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN;
| 型号： | MSASC25H45KV |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 25A, 45V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, THINKEY2, 1 PIN |
| 文件： | 总2页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8700 E. Thomas Road
Scottsdale, AZ 85252
PH: (480) 941-6300
FAX: (480) 941-1503
MSASC25H45K
MSASC25H45KR
Features
ꢀꢁ Tungsten/Platinum schottky barrier for very low VF
ꢀꢁ Oxide passivated structure for very low leakage currents
ꢀꢁ Guard ring protection for increased reverse energy capability
ꢀꢁ Epitaxial structure minimizes forward voltage drop
ꢀꢁ Hermetically sealed, low profile ceramic surface mount power package
ꢀꢁ Low package inductance
45 Volts
25 Amps
ꢀꢁ Very low thermal resistance
LOW VOLTAGE
DROP SCHOTTKY
DIODE
ꢀꢁ Available as standard polarity (strap is anode:MSASC25H45K) and
reverse polarity (strap is cathode:MSASC25H45KR)
ꢀꢁ TXV-level (MSASC25H45KV) or S-level (MSASC25H45KS) screening
i.a.w. Microsemi Internal Procedure PS11.50 available
Maximum Ratings @ 25ꢃC (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
VRRM
VRWM
VR
IF(ave)
dIF/dT
IFSM
IRRM
Tj
Tstg
45
45
45
25
(3.3)
280
2
Volts
Volts
Volts
Amps
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tcꢂ 145ꢃC
derating, forward current, Tcꢄ 145ꢃC
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Peak Repetitive Reverse Surge Current, tp= 1ꢅs, f= 1kHz
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
Amps/ꢃC
Amps
Amp
-55 to +150
-55 to +150
0.85
ꢃC
ꢃC
ꢃC/W
MSASC25H45K
MSASC25H45KR
ꢆJC
0.95
Mechanical Outline
ThinKey™2
Datasheet# MSC1458B
MSASC25H45K
MSASC25H45KR
Electrical Parameters
DESCRIPTION
Reverse (Leakage)
Current
SYMBOL
CONDITIONS
VR= 45 Vdc, Tc= 25ꢃC
VR= 45 Vdc, Tc= 125ꢃC
IF= 5A, Tc= 25ꢃC
IF= 10A, Tc= 25ꢃC
IF= 20A, Tc= 25ꢃC
IF= 50A, Tc= 25ꢃC
IF= 10A, Tc= -55ꢃC
IF= 10A, Tc= 125ꢃC
VR= 10 Vdc
MIN
TYP.
300
100
375
430
510
740
480
360
525
725
55
MAX
1000
150
475
520
UNIT
ꢅA
IR
IR
VF
VF
VF
VF
VF
VF
mA
mV
mV
mV
mV
mV
mV
pF
Forward Voltage
pulse test,
pw= 300 ꢅs
d/cꢂ 2%
610
580
600
Junction Capacitance
Breakdown Voltage
Cj
Cj
BVR
VR= 5 Vdc
pF
V
V
IR= 1 mA, Tc= 25ꢃC
IR= 1 mA, Tc= -55ꢃC
45
50
VF typical vs. IF
1.2
1
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
100
IF (A)
Datasheet# MSC1458B
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