MSDM200-12 [MICROSEMI]

Bridge Rectifier Diode, 3 Phase, 200A, 1200V V(RRM), Silicon, CASE M3-1, 5 PIN;
MSDM200-12
型号: MSDM200-12
厂家: Microsemi    Microsemi
描述:

Bridge Rectifier Diode, 3 Phase, 200A, 1200V V(RRM), Silicon, CASE M3-1, 5 PIN

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MSDM200  
Glass Passivated Three  
Phase Rectifier Bridge  
VRRM 800 to 1800V  
ID  
200 Amp  
Applications  
y
y
y
y
Three phase rectifiers for power supplies  
Rectifiers for DC motor field supplies  
Battery charger rectifiers  
Input rectifiers for variable frequency drives  
Circuit  
Features  
+
y
y
y
Three phase bridge rectifier  
Blocking voltage:800 to 1800V  
Heat transfer through aluminum oxide DBC  
ceramic isolated metal baseplate  
Glass passivated chip  
~
~
~
MSDM  
-
y
y
UL E243882 approved  
Module Type  
TYPE  
VRRM  
800V  
1200V  
1600V  
1800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MSDM200-08  
MSDM200-12  
MSDM200-16  
MSDM200-18  
Maximum Ratings  
Symbol  
Conditions  
Three phase, full wave Tc=100℃  
t=10mS Tvj =45℃  
Values  
200  
Units  
A
ID  
IFSM  
i2t  
2240  
A
A2s  
t=10mS Tvj =45℃  
25000  
Visol  
Tvj  
a.c.50HZ;r.m.s.;1min  
3000  
V
-40 to +150  
-40 to +125  
5±15%  
5±15%  
220  
Tstg  
Mt  
To terminals(M6)  
Nm  
Nm  
g
Ms  
To heatsink(M6)  
Weight  
Module (Approximately)  
Thermal Characteristics  
Symbol  
Conditions  
Values  
0.45  
Units  
/W  
Rth(j-c)  
Per diode  
Rth(c-s)  
Module  
0.025  
/W  
Electrical Characteristics  
Symbol  
Values  
Min. Typ. Max.  
Conditions  
Units  
T=25IF =200A  
1.31  
1.45  
V
VFM  
IRD  
Tvj=25VRD=VRRM  
Tvj=150VRD=VRRM  
0.5  
6
mA  
mA  
MSDM200 – Rev 0  
Oct, 2011  
www.microsemi.com  
1/3  
MSDM200  
Performance Curves  
480  
W
300  
A
200  
100  
240  
typ.  
max.  
25℃  
Pvtot  
- - -125℃  
IF  
0
0
0
ID  
100  
A 200  
0
VF  
0.5  
1.0  
1.5  
V 2.0  
Fig2. Power dissipation  
Fig1. Forward Characteristics  
0.5  
3000  
A
50HZ  
/ W  
Zth(j-C)  
2250  
0.25  
1500  
750  
0
0
0.001  
0.01  
0.1  
1.0  
10  
S 100  
1
10  
cycles 100  
Fig4. Max Non-Repetitive Forward Surge  
Current  
Fig3. Transient thermal impedance  
250  
A
200  
150  
100  
50  
ID  
0
0
Tc  
50  
100  
150  
Fig5.Forward Current Derating Curve  
MSDM200 – Rev 0  
Oct, 2011  
www.microsemi.com  
2/3  
MSDM200  
Package Outline Information  
CASEM3-1  
C
D
E
A
B
1
2
3
4
5
6
Dimensions in mm  
MSDM200 – Rev 0  
Oct, 2011  
www.microsemi.com  
3/3  

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