MSP1N6476US [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2;
| 型号： | MSP1N6476US |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 51.6V V(RWM), Unidirectional, 1 Element, Silicon, HERMETICALLY SEALED, GLASS, D-5C, MELF-2 |
| 文件： | 总3页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6469US thru 1N6476US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This surface mount series of industry recognized voidless-hermetically-sealed
Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-
PRF-19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in axial-leaded packages for thru-hole mounting by deleting
the “US” suffix (see separate data sheet for 1N6469 thru 1N6476A). Microsemi also
offers numerous other TVS products to meet higher and lower peak pulse power and
voltage ratings in both through-hole and surface-mount packages.
Package “G”
(or “D-5C”)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
•
•
•
Military and other high reliability transient protection
Extremely robust construction
•
•
•
•
Triple-layer passivation
Working Peak “Standoff” Voltage (VWM) from 5.0 to
51.6 V
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
•
•
Available as 1500 W Peak Pulse Power (PPP)
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
•
Secondary lightning protection per select levels in
IEC61000-4-5
•
•
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6469, MSP6476, etc.
•
•
Square-end-cap terminals for easy mounting
Nonsensitive to ESD per MIL-STD-750 Method
1020
Axial-leaded equivalents are also available (see
separate data sheet for 1N6469 thru 1N6476)
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & Storage Temperature: -55oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs
(also see Figures 1,2 and 4)
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb)
finish.
•
•
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 130 Amps@ 8.33 ms one-
half sine wave
•
•
•
•
•
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
•
•
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
Steady-State Power: 3.0 W @ TA = 25oC (see note
below and Figure 4)
Tape & Reel option: Standard per EIA-481-B
Weight: 1100 mg
•
•
Thermal Resistance Junction to End Cap: 20.0 oC/W
See package dimensions on last page
Solder Temperatures: 260oC for 10 s (maximum)
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
Copyright © 2007
5-15-2007 REV C
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6469US thru 1N6476US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS
MAXIMUM
CLAMPING
VOLTAGE
VC
MAXIMUM
PEAK PULSE
CURRENT
IPP
BREAKDOWN
CURRENT
MAXIMUM
TEMP.
COEF. OF
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
WORKING
MAX
LEAKAGE
CURRENT
ID
PEAK
VOLTAGE
VWM
I
TYPE
(BR)
@ 10/1000 µs
V(BR)
@8/20 µs
@10/1000 µs
Volts
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
mAdc
50
50
10
10
5
1
1
1
Vdc
5
6
12
15
V(pk)
9.0
A(pk)
945
775
374
322
207
181
135
107
A(pk)
167
137
66
57
36.5
32
%/oC
-.03, +0.04
0.06
0.085
0.085
.096
μAdc
1500
1000
20
10
5
5
5
5
1N6469US
1N6470US
1N6471US
1N6472US
1N6473US
1N6474US
1N6475US
1N6476US
11.0
22.6
26.5
41.4
47.5
63.5
78.5
24
30.5
40.3
51.6
.098
.101
.103
24
19
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
VWM
ID
VC
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditions.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP
.
PPP
GRAPHS
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
I
P decays to 50% of peak
value (IPP).
time (t) in milliseconds
FIG. 1 – Non-repetive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
FIG. 2 Pulse wave form for exponential surge
for 10/1000 µs
Copyright © 2007
5-15-2007 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6469US thru 1N6476US
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
S C O T T S D A L E D I V I S I O N
FIGURE 3
T – Temperature – oC
8/20 µs CURRENT IMPULSE WAVEFORM
FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
G-MELF-PKG (D-5C)
Note: If mounting requires adhesive separate from the solder,
an additional 0.090 inch diameter contact may be placed in the
center between the pads as an optional spot for cement as
shown in the pad layout.
Copyright © 2007
5-15-2007 REV C
Microsemi
Scottsdale Division
Page 3
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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