MSP1N6508 [MICROSEMI]

Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14;


型号：	MSP1N6508
厂家：	Microsemi
描述：	Trans Voltage Suppressor Diode, Unidirectional, 16 Element, Silicon, HERMETIC SEALED, CERAMIC, DIP-14
文件：	总2页 (文件大小：80K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N6508

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated

by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the

positive side of the power supply line and to ground (see Figure 1). An external TVS

diode may be added between the positive supply line and ground to prevent over-

voltage on the supply rail. They may also be used in fast switching core-driver

applications. This includes computers and peripheral equipment such as magnetic

cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding

applications. These arrays offer many advantages of integrated circuits such as high-

density packaging and improved reliability. This is a result of fewer pick and place

operations, smaller footprint, smaller weight, and elimination of various discrete

packages that may not be as user friendly in PC board mounting.

14-PIN Ceramic DIP

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

•

Hermetic Ceramic Package

Isolated Diodes to Eliminate Cross-Talk Voltages

High Breakdown Voltage V_BR> 60 V at 10 μA

Low Leakage I_R< 100nA at 40 V

Low Capacitance C < 8.0 pF

Switching Core Drivers

IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD: Air 15 kV, contact 8 kW

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A 8/20 μs

Switching Speeds less than 20 ns

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N6508 for a JANTX screen.

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

14-PIN Ceramic DIP

•

Reverse Breakdown Voltage of 60 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25^oC

600 mW Power Dissipation per Package @ 25^oC (Note 4)

Operating Junction Temperature range –65 to +150^oC

Storage Temperature range of –65 to +200^oC

Weight 2.05 grams (approximate)

Marking: Logo, part number, date code

Pin #1 to the left of the indent on top of package

Carrier Tubes; 25 pcs (standard)

NOTE 1: Each Diode

NOTE 2: Pulsed: P_W= 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/^oC above +25^oC

NOTE 4: Derate at 4.8 mW/^oC above +25^oC

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified

MAXIMUM

REVERSE

RECOVERY TIME

trr

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

RECOVERY TIME

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

I = I_R= 200 mA

C_t

i = 20 mA

I = 100 mA

I = 500 mA

V_R= 0 V

F = 1 MHz

I = 500 mA

R = 100 ohms

(Note 1)

V_R= 40 V

PART

NUMBER

μA

1N6508

1.7

0.1

8.0

NOTE 1: Pulsed: P_W= 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

6-9-2005 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N6508

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

S C O T T S D A L E D I V I S I O N

SYMBOLS & DEFINITIONS

Symbol

V_BR

DEFINITION

Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.

Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.

V_F

Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and

temperature.

I_R

Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in

picofarads.

C_t

SCHEMATIC

PACKAGE DIMENSIONS

CIRCUIT

Supply rail (+V_CC)

I/O Port

GND (or -V_CC)

Steering Diode Application

FIGURE 1

6-9-2005 REV B

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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