MSP1N6624 [MICROSEMI]
Rectifier Diode, Avalanche, 1 Element, 1A, 900V V(RRM), Silicon, GLASS, A PACKAGE, 2 PIN;
| 型号： | MSP1N6624 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Avalanche, 1 Element, 1A, 900V V(RRM), Silicon, GLASS, A PACKAGE, 2 PIN 局域网 二极管 |
| 文件： | 总4页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Surface mount series equivalent to the JEDEC
•
Ultrafast recovery rectifier series 200 to 1000 V
registered 1N6620 to 1N6625 series
•
•
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
•
•
•
•
•
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
•
•
High forward surge current capability
Internal “Category I” Metallurgical bonds
Low thermal resistance
JAN, JANTX, and JANTXV available per MIL-PRF-
•
Controlled avalanche with peak reverse power
capability
19500/585
•
•
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6620US, MSP6624US, etc.
•
Inherently radiation hard as described in Microsemi
MicroNote 050
Axial-leaded equivalents also available (see separate
data sheet for 1N6620 thru 1N6625)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
• Storage Temperature: -65oC to +175oC
with Tungsten slugs
• Peak Forward Surge Current @ 25oC: 20 Amps (except
TERMINATIONS: End caps are solid Silver (Ag)
with Tin/Lead (Sn/Pb) finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
1N6625 which is 15 Amps)
•
•
•
•
•
Note: Test pulse = 8.3 ms, half-sine wave.
• Average Rectified Forward Current (IO) at TEC=+110oC:
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 1.5%/oC for TEC > +110oC)
• Average Rectified Forward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
See package dimensions and recommended pad
layout on last page
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded.)
• Thermal Resistance junction to endcap (RθJEC): 20oC/W
• Capacitance at VR= 10 V: 10 pF
• Solder temperature: 260oC for 10 s (maximum)
Copyright 2004
11-01-2004 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
TYPE
MINIMUM
BREAK-
DOWN
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
MAXIMUM
REVERSE
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
MAXIMUM
REVERSE
PEAK
RECOVERY RECOVERY
CURRENT VOLTAGE
RM (rec) FRM Max
F = 0.5A
FORWARD
NUMBER
REVERSE
VOLTAGE
VRWM
RECOVERY
TIME (HIGH
CURRENT)
CURRENT IR
@
VOLTAGE
VR
VF @ IF
I
V
I
VRWM
I
F = 2A,
IR
TA=25oC TA=150oC
I
R = 50µA
t
t
rr
rr
100A/µs
t
fr
=12ns
Note 1
ns
Note 2
ns
Note 2
A
V
V @ A
V @ A
V
V
µA
0.5
0.5
0.5
0.5
0.5
µA
150
150
150
150
150
200
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
220
440
660
880
990
1100
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.55V @ 1.0A 1.80V @ 1.5A
1.55V @ 1.0A 1.80V @ 1.5A
1.75V @ 1.0A 1.95V @ 1.5A
200
400
600
800
900
1000
30
45
3.5
3.5
3.5
4.2
4.2
12
12
12
18
18
30
30
45
30
45
50
60
50
60
NOTE 1: Low Current Reverse Recovery Time Test Condi1ti.o0ns: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A p5e.r0MIL-STD-750,
60
80
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/µs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VRWM
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
C
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1
Typical Forward Current
vs
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Forward Voltage
Copyright 2004
Microsemi
Page 2
11-01-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
FIGURE 3
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
Typical Reverse Current vs.
Applied Reverse Voltage
FIGURE 5
FIGURE 6
Forward Pulse Current vs.
Reverse Pulse Power vs.
Pulse Duration
Pulse Duration
Copyright 2004
Microsemi
Page 3
11-01-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
PACKAGE DIMENSIONS
NOTE: This Package Outline has also previously
been identified as “D-5A”
PAD LAYOUT
INCHES
0.246
0.067
mm
6.25
1.70
2.67
A
B
C
INCHES
mm
MIN
MAX
.103
.200
MIN
2.46
4.70
MAX
2.62
5.08
0.105
BD
BL
ECT
S
.097
.185
.019
.003
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
.028
---
0.48
0.08
0.71
---
Copyright 2004
Microsemi
Page 4
11-01-2004 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
MSP1N6625
Rectifier Diode, Avalanche, 1 Element, 1A, 1000V V(RRM), Silicon, GLASS, A PACKAGE, 2 PIN
MICROSEMI
MSP1N6625US
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN
MICROSEMI
MSP1N6626US
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, Silicon, GLASS, D-5B PACKAGE, 2 PIN
MICROSEMI
MSP1N6627US
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, Silicon, GLASS, D-5B PACKAGE, 2 PIN
MICROSEMI
MSP1N6628US
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, Silicon, GLASS, D-5B PACKAGE, 2 PIN
MICROSEMI
MSP1N6629US
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, GLASS, D-5B PACKAGE, 2 PIN
MICROSEMI
MSP1N6630US
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, GLASS, D-5B PACKAGE, 2 PIN
MICROSEMI
MSP1N746A
Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
MSP1N746AE3
Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
MSP1N746AE3TR
Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
MSP1N746ATR
Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
MSP1N746C
Zener Diode, 3.3V V(Z), 2%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明