MSP1N6625US
更新时间：2024-09-18 14:25:29
品牌：MICROSEMI
描述：Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN
概述
规格参数
数据手册MSP1N6625US 概述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, D-5A, 2 PIN 整流二极管
MSP1N6625US 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Active | 包装说明： | O-LELF-R2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.58 | Is Samacsys： | N |
| 其他特性： | METALLURGICALLY BONDED | 外壳连接： | ISOLATED |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | JESD-30 代码： | O-LELF-R2 |
| JESD-609代码： | e0 | 元件数量： | 1 |
| 端子数量： | 2 | 最大输出电流： | 1 A |
| 封装主体材料： | GLASS | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 认证状态： | Not Qualified | 参考标准： | MIL-19500 |
| 最大重复峰值反向电压： | 1000 V | 最大反向恢复时间： | 0.08 µs |
| 表面贴装： | YES | 端子面层： | TIN LEAD |
| 端子形式： | WRAP AROUND | 端子位置： | END |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | Base Number Matches： | 1 |
MSP1N6625US 数据手册
通过下载MSP1N6625US数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Surface mount series equivalent to the JEDEC
registered 1N6620 to 1N6625 series
•
•
•
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
•
•
•
•
•
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
•
•
•
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
Controlled avalanche with peak reverse power
capability
•
•
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6620US, MSP6624US, etc.
•
Inherently radiation hard as described in Microsemi
MicroNote 050
Axial-leaded equivalents also available (see separate
data sheet for 1N6620 thru 1N6625)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• Peak Forward Surge Current @ 25oC: 20 Amps (except
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead plating.
1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
• Average Rectified Forward Current (IO) at TEC=+110oC:
1N6620 thru 1N6622: 2.0 Amps
•
•
•
•
•
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 193 mg
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 1.5%/oC for TEC > +110oC)
• Average Rectified Forward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
See package dimensions and recommended pad
layout on last page
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded.)
• Thermal Resistance junction to endcap (RθJEC): 20oC/W
• Capacitance at VR= 10 V: 10 pF
• Solder temperature: 260oC for 10 s (maximum)
Copyright © 2007
1-17-2007 REV C
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
TYPE
MINIMUM
BREAK-
DOWN
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
MAXIMUM
REVERSE
CURRENT IR
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
PEAK
RECOVERY RECOVERY
CURRENT VOLTAGE
RM (rec) FRM Max
F = 2A, F = 0.5A
FORWARD
NUMBER
REVERSE
VOLTAGE
VRWM
@
VOLTAGE
VR
VF @ IF
I
I
V
I
VRWM
IR
TA=25oC TA=150oC
I
R = 50μA
t
t
rr
Note 2
rr
100A/μs
t
fr
=12ns
Note 1
Note 2
V
V @ A
V @ A
V
ns
30
30
30
50
50
60
ns
45
45
45
60
60
80
A
V
μA
0.5
0.5
0.5
0.5
0.5
1.0
μA
150
150
150
150
150
200
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
220
440
660
880
990
1100
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.55V @ 1.0A 1.80V @ 1.5A
1.55V @ 1.0A 1.80V @ 1.5A
1.75V @ 1.0A 1.95V @ 1.5A
200
400
600
800
900
1000
3.5
3.5
3.5
4.2
4.2
5.0
12
12
12
18
18
30
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
VRWM
VF
IR
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
C
trr
CHARTS AND GRAPHS
FIGURE 1
Typical Forward Current
vs
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Forward Voltage
Copyright © 2007
1-17-2007 REV C
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
FIGURE 3
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
Typical Reverse Current vs.
Applied Reverse Voltage
FIGURE 5
FIGURE 6
Forward Pulse Current vs.
Pulse Duration
Reverse Pulse Power vs.
Pulse Duration
Copyright © 2007
1-17-2007 REV C
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
S C O T T S D A L E D I V I S I O N
PACKAGE DIMENSIONS
NOTE: This Package Outline has also previously
been identified as “D-5A”
PAD LAYOUT
INCHES
0.246
mm
6.25
1.70
2.67
A
B
C
INCHES
mm
0.067
MIN
MAX
.103
.200
MIN
2.46
4.70
MAX
2.62
5.08
0.105
BD
BL
ECT
S
.097
.185
.019
.003
Note: If mounting requires adhesive
separate from the solder, an additional
0.060 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
.028
---
0.48
0.08
0.71
---
Copyright © 2007
1-17-2007 REV C
Microsemi
Page 4
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
MSP1N6625US 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MSP1N6626US | MICROSEMI | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, Silicon, GLASS, D-5B PACKAGE, 2 PIN | 获取价格 |
|
| MSP1N6627US | MICROSEMI | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, Silicon, GLASS, D-5B PACKAGE, 2 PIN | 获取价格 |
|
| MSP1N6628US | MICROSEMI | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, Silicon, GLASS, D-5B PACKAGE, 2 PIN | 获取价格 |
|
| MSP1N6629US | MICROSEMI | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, GLASS, D-5B PACKAGE, 2 PIN | 获取价格 |
|
| MSP1N6630US | MICROSEMI | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, Silicon, GLASS, D-5B PACKAGE, 2 PIN | 获取价格 |
|
| MSP1N746A | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| MSP1N746AE3 | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| MSP1N746AE3TR | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| MSP1N746ATR | MICROSEMI | Zener Diode, 3.3V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| MSP1N746C | MICROSEMI | Zener Diode, 3.3V V(Z), 2%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
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