MSTC40-16 [MICROSEMI]
Silicon Controlled Rectifier, 62.8A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, T1, 7 PIN;
| 型号： | MSTC40-16 |
| 厂家： | 
Microsemi |
| 描述： | Silicon Controlled Rectifier, 62.8A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element, T1, 7 PIN 局域网 栅 栅极 |
| 文件： | 总4页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSTC40
Thyristor/Diode Modules
VRRM / VDRM 800 to 1600V
ITAV
40Amp
Applications
y
y
y
y
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
6
7
y
y
y
y
y
International standard package
High Surge Capability
1
2
3
MSTC
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DCB
ceramic isolated metal baseplate
5
4
Module Type
TYPE
VRRM
VRSM
MSTC40-08
MSTC40-12
MSTC40-16
800V
1200V
1600V
900V
1300V
1700V
Maximum Ratings
Symbol
Conditions
Values
Units
ITAV
Sine 180o;Tc=85℃
40
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
1000
850
ITSM
i2t
A
TVJ =45℃ t=10ms, sine
TVJ =125℃ t=10ms, sine
5000
3600
A2s
Visol
Tvj
a.c.50HZ;r.m.s.;1min
3000
V
-40 to 125
-40 to 125
3±15%
5±15%
℃
Tstg
Mt
℃
To terminals(M5)
To heatsink(M6)
Nm
Nm
Ms
TVJ= TVJM , 2/3VDRM ,IG =500mA
Tr<0.5us,tp>6us
di/dt
150
A/us
dv/dt
a
TJ= TVJM ,2/3VDRM linear voltage rise
Maximum allowable acceleration
Module(Approximately)
1000
50
V/us
m/s2
g
Weight
100
Thermal Characteristics
Symbol
Rth(j-c)
Conditions
Cont.;per thyristor / per module
Values
0.65/0.33
0.2/0.1
Units
℃/W
Rth(c-s)
per thyristor / per module
℃/W
MSTC40 – Rev 0
Oct, 2011
www.microsemi.com
1/4
MSTC40
Electrical Characteristics
Values
Typ.
Symbol
Conditions
Units
Max.
Min.
VTM
T=25℃ ITM =200A
1.95
V
mA
V
IRRM/IDRM
VTO
rT
TVJ =TVJM ,VR=VRRM ,VD=VDRM
For power-loss calculations only (TVJ =125℃)
TVJ =TVJM
15
1.0
4.5
2.5
150
0.25
6
mΩ
V
VGT
IGT
TVJ =25℃ , VD =6V
TVJ =25℃ , VD =6V
mA
V
VGD
IGD
TVJ =125℃ , VD =2/3VDRM
TVJ =125℃ , VD =2/3VDRM
TVJ =25℃ , RG = 33 Ω
TVJ =25℃ , VD =6V
mA
mA
mA
us
IL
300
150
1
600
250
IH
tgd
tq
TVJ =25℃, IG=1A, diG/dt=1A/us
TVJ =TVJM
us
80
MSTC40 – Rev 0
Oct, 2011
www.microsemi.com
2/4
MSTC40
Performance Curves
60
100
W
DC
A
48
DC
75
sin.180
rec.120
sin.180
rec.60
36
rec.120
rec.60
rec.30
50
24
12
rec.30
25
PTAV
0
ITAVM
0
0
ITAV 10
20
30
40
50
A 60
0
Tc
50
100
℃ 130
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
1000
A
1.0
50HZ
℃/ W
Zth(j-S)
Zth(j-C)
0.5
500
0
0
0.001
t
0.01
0.1
1
10
S 100
10
100
ms 1000
Fig3. Transient thermal impedance
Fig4. Max Non-Repetitive Forward Surge
Current
250
A
Typ.
200
125℃
150
100
25
max.
25℃
IT
0
0
VTM 0.5
1.0
1.5
2.0
V
2.5
Fig5. Forward Characteristics
MSTC40 – Rev 0
Oct, 2011
www.microsemi.com
3/4
MSTC40
100
V
1/2·MSCT40
20V;20Ω
10
1
VGT
PG(tp)
-40℃
25℃
Tvj
125℃
VGD125
℃
VG
IGT
IGD125
℃
0.1
0.001 IG
0.01
0.1
1
10
A
100
Fig6. Gate trigger Characteristics
Package Outline Information
CASE: T1
×
Dimensions in mm
MSTC40 – Rev 0
Oct, 2011
www.microsemi.com
4/4
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