MSV201AE3 [MICROSEMI]

Stabistor Diode, Silicon, DO-201AA;


型号：	MSV201AE3
厂家：	Microsemi
描述：	Stabistor Diode, Silicon, DO-201AA 二极管
文件：	总3页 (文件大小：166K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MSV101A thru MSV101G, e3

MSV201A thru MSV701A, e3

BIDIRECTIONAL VARISTORS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The MSV series consists of a matched set of silicon p-n junctions

configured for bidirectional application. They can be used in telephone

equipment, replacing copper-oxide varistors, fractional voltage regulators,

negative-temperature-coefficient resistors, signal limiters and expanders.

They are ideally suited for meter/galvanometer protection, wave shaping,

threshold limiters and zener diode compensation.

The MSV varistor uses two or more forward biased matched silicon diodes

in anti-parallel legs in a two-electrode device configuration. It provides a

voltage-dependent nonlinear resistance that drops markedly as the applied

voltage is increased similar to a TVS except it offers lower voltage features.

MSV devices are designed for controlled protection at various current

levels and are rated at various peak pulse currents.

These varistors are supplied in Microsemi’s cost-effective, highly reliable,

molded axial-leaded package. Non-standard voltages are also available.

Devices in this series with V_C2clamping are rated to U.L.497B

DO-201AA

requirements. (See table).

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Bidirectional low voltage clamping 1.5 V to 9.0 V using

•

Low voltage clamping protection well be low

conventional TVS components

forward biased diodes in series and antiparallel

• Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers

•

Telephone equipment protection

Protects from switching transients

Protection from ESD and EFT per IEC 61000-4-2

and IEC61000-4-4

• Moisture classification is Level 1 with no dry pack

•

Secondary lightning protection

required per IPC/JEDEC J-STD-020B

Clamping voltages also specified per U.L. 497B with

100 V/µs rise time

• RoHS Compliant devices available by adding e3 suffix

• Negative temperature coefficient (see Figure 2)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Steady State Power: 1.0 Watt at 50^oC.

•

CASE: Void free molded thermosetting epoxy body

meeting UL94V-0

Operating and Storage temperatures: -65^oC to

+150^oC.

TERMINALS: Tin-lead or RoHS Compliant

annealed matte-Tin plating over copper readily

solderable per MIL-STD-750, method 2026

•

Surge: 30 Amps, 8.4 ms @ 25^oC.

Pulse: 1.0 ms @ 25^oC for V_C1clamping*.

•

POLARITY: Not marked for Bidirectional

MARKING: Part Number

_clamping(0 volts to V_BRmin.): Less than 1x10^-8

seconds (theoretical)

Solder temperatures: 260^oC for 10 s (maximum)

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 1.5 gram (approx.)

See package dimensions on last page

4-14-2006 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

MSV101A thru MSV101G, e3

MSV201A thru MSV701A, e3

BIDIRECTIONAL VARISTORS

S C O T T S D A L E D I V I S I O N

ELECTRICAL CHARACTERISTICS

C_J@ 0 VOLTS

V_BR@ I_BR

V / μA

Minimum

MICROSEMI

PART

NUMBER

_BR@ I_BR

V_C1@ I_PP

V / A

Maximum

f = 1 MHz

Maximum

V_C2**

Maximum

V / mA

Maximum

.05 / 10

.14 / 100

.05 / 10

.14 / 100

.05 / 10

.14 / 100

.43 / 100

.56 / 1,000

.43 / 100

.56 / 1,000

.20 / 10

MSV101A

MSV101B

MSV101C

MSV101D

MSV101E

MSV101F

MSV101G

MSV201A

MSV301A

MSV401A

MSV401B

MSV401C

200

.51 / 1,000

200

.66 / 1,000

200

.50 / 1,000

.72 / 10

1.5 / 50

1500

750

3.8

4.4

5.4

6.4

.90 / 100

1.5 / 50

.90 / 100

1.5 / 50

.56 / 1,000

.20 / 10

.90 / 100

1.5 / 50

.56 / 1,000

.86 / 100

1.10 / 1,000

1.60 / 1,000

1.72 / 100

2.20 / 1,000

1.30 / 10

2.20 / 1,000

1.48 / 10

3.0 / 45

4.5 / 40

500

2.40 / 50

2.92 / 10

4.5 / 35

400

2.92 / 10

5.5 / 35

400

5.5 / 35

400

300

6.4

7.4

2.20 / 1,000

1.70 / 10

2.80 / 1,000

3.10 / 50

5.00 / 100

6.5 / 30

MSV501A

3.00 / 10

3.40 / 1,000

3.70 / 100

3.90 / 1,000

4.60 / 100

8.0 / 30

250

220

8.4

9.4

MSV601A

MSV701A

5.00 / 5.0

9.0 / 30

* Conditions: Pulse is 10/1000 μs wave shape.

** Per U.L.497B with 100 V/μs rise time.

10 μs rise, 1000 μs triangle fall to ½ amplitude.

Voltage limits measured at I_PPpeak pulse current.

4-14-2006 REV B

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

MSV101A thru MSV101G, e3

MSV201A thru MSV701A, e3

BIDIRECTIONAL VARISTORS

S C O T T S D A L E D I V I S I O N

GRAPHS

FIGURE 2

Temperature Coefficient (TC)

of Voltage vs. Current †

FIGURE 1

Typical Current vs. Voltage †

PACKAGE DIMENSIONS &

SCHEMATIC

† NOTE: In Figures 1 & 2, multiply applicable V_BRvoltage or

TC by 2 for MSV201, by 3 for MSV301, by 4 for MSV401, by 5

for MSV501, by 6 for MSV601, and by 7 for MSV701.

SCHEMATIC

4-14-2006 REV B

Microsemi

Page 3

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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