MX1N4782TR [MICROSEMI]
Zener Diode, 8.5V V(Z), 5%, 0.25W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN;
| 型号： | MX1N4782TR |
| 厂家： | 
Microsemi |
| 描述： | Zener Diode, 8.5V V(Z), 5%, 0.25W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件： | 总2页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4775 thru 1N4784A
8.5 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a
selection of 8.5 V nominal voltages and temperature coefficients to as low
as 0.0005%/oC for minimal voltage change with temperature when operated
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and
JANS also exist by using MQ, MX, MV or MSP respectively for part number
prefixes and high reliability screening. Microsemi also offers numerous
other Zener Reference Diode products for a variety of other voltages from
6.2 V to 200 V
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Provides minimal voltage changes over a broad
temperature range for instrumentation and other
circuit designs requiring a voltage reference
•
•
•
•
JEDEC registered 1N4775 thru 1N4784A series
Standard reference voltage of 8.5 V +/- 5%
Internal metallurgical bonds
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example,
designate “MX1N4779A” for a JANTX, or
MV1N4784A for a JANTXV screen.
Radiation Hardened devices available by changing
the “1N” prefix to “RH”, e.g. RH4779A, RH4784A,
etc. Also consult factory for “RH” data sheet
brochure for other radiation hardened reference
diode products.
•
•
Temperature coefficient selections available from
0.01%/ºC to 0.0005%/ºC
Tight voltage tolerances available by adding
tolerance 1%, 2%, 3%, etc. after part number for
further identification, e.g. 1N4773A-2%, 1N4774A-
1%, 1N4769-3%, 1N4769A-1%, etc.
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
•
•
•
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & StorageTemperature: -65oC to +175oC
•
•
CASE: Hermetically sealed glass case with DO-7
DC Power Dissipation: 250 mW @ TL = 25oC
NOTE: For optimum voltage-temperature stability,
the test current IZT = 0.5 or 1.0 mA as shown in
Electrical Characteristics (less than 10 mW in
dissipated power)
(DO-204AA) package
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
•
•
•
Solder temperatures: 260 oC for 10 s (maximum)
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
•
WEIGHT: 0.2 grams.
See package dimensions on last page
Copyright 2003
Microsemi
Page 1
8-19-2003 REV A
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N4775 thru 1N4784A
8.5 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
MAXIMUM
JEDEC
TYPE
ZENER
VOLTAGE
(Note 5)
ZENER
TEST
MAXIMUM
DYNAMIC
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
IR
VOLTAGE
TEMPERATURE
STABILITY
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COMPENSIATIONS
NUMBER
CURRENT
IMPEDANCE
(Note 3 & 5)
α
VZ
VZ @ IZT
IZT
ZZT
∆VZT
mV
64
132
32
66
13
26
6
VOLTS
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
8.5
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
100
100
100
100
100
100
µA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
oC
%/oC
0.01
1N4775
0 to + 75
1N4775A
1N4776
-55 to +100
0 to + 75
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
0.01
1N4776A
1N4777
-55 to +100
0 to + 75
1N4777A
1N4778
-55 to +100
0 to + 75
1N4778A
1N4779
13
3
-55 to +100
0 to + 75
1N4779A
1N4780
7
-55 to +100
0 to + 75
64
132
32
66
13
26
6
1N4780A
1N4781
-55 to +100
0 to + 75
0.01
0.005
0.005
0.002
0.002
0.001
0.001
0.0005
0.0005
1N4781A
1N4782
-55 to +100
0 to + 75
1N4782A
1N4783
-55 to +100
0 to + 75
1N4783A
1N4784
13
3
-55 to +100
0 to + 75
1N4784A
7
-55 to +100
*JEDEC Registered Data.
NOTES:
1.
Designate Radiation Hardened devices with “RH” prefix instead of “1N,” i.e., RH4784A. Consult factory for TX, TXV or
JANS equivalent SCDs.
2.
3.
4.
5.
Measured by superimposing IZ ac rms on IZ dc @ 25oC where IZ ac rms = 10% IZ dc.
Maximum allowable change between any two discrete temperatures over the specified temperature change.
When ordering devices with a tighter tolerance than specified, use a nominal center voltage of 8.4 volts.
Voltage measurements to be performed 15 seconds after application of dc current.
PACKAGE DIMENSIONS
All dimensions in: INCH
mm
Copyright 2003
8-19-2003 REV A
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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