MX1N5189US [MICROSEMI]

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETICALLY SEALED GLASS, D-5B, 2 PIN;


型号：	MX1N5189US
厂家：	Microsemi
描述：	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETICALLY SEALED GLASS, D-5B, 2 PIN 快速恢复二极管
文件：	总2页 (文件大小：281K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5186US thru 1N5190US

VOIDLESS-HERMETICALLY SEALED

SURFACE MOUNT FAST RECOVERY

GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “fast recovery” rectifier diode series is ideal for high-reliability applications

where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated

rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically

sealed with voidless-glass construction using an internal “Category I” metallurgical

bond. These devices are also available in military qualified axial-leaded packages

by deleting the “US” suffix. Microsemi also offers numerous other rectifier products

to meet higher and lower current ratings with various recovery time speed

requirements including fast and ultrafast device types in both through-hole and

surface mount packages.

Package “E”

or D-5B

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount equivalent to the popular JEDEC

•

Fast recovery 3 Amp rectifiers 100 to 600 V

registered 1N5186 to 1N5190 series

•

Military and other high-reliability applications

General rectifier applications including bridges,

half-bridges, catch diodes, etc.

•

Voidless hermetically sealed glass package

Triple-Layer Passivation

Internal “Category I” Metallurgical bonds

Working Peak Reverse Voltage 100 to 600 Volts.

Further options in screening in accordance with MIL-

PRF-19500/424 for JAN, JANTX, and JANTXV by adding

a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,

MV1N5187US, etc.

•

High forward surge current capability

Extremely robust construction

Low thermal resistance

•

Controlled avalanche with peak reverse power

capability

•

Inherently radiation hard as described in

Microsemi MicroNote 050

•

Axial-leaded package equivalents also available (see

separate data sheet for 1N5186 thru 1N5190)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction & Storage Temperature: -65^oC to +175^oC

Thermal Resistance: 10^oC/W junction to end cap

Thermal Impedance: 1.5^oC/W @ 10 ms heating time

Average Rectified Forward Current (I_O): 3.0 Amps @ T_A=

25ºC and 0.700 Amps at T_A= 150ºC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

TERMINATIONS: End caps are solid silver with

Tin/Lead (Sn/Pb) finish

MARKING: Cathode band only

POLARITY: Cathode indicated by band

TAPE & REEL option: Standard per EIA-481-B

WEIGHT: 539 mg

•

Forward Surge Current: 80 Amps @ 8.3 ms half-sine

Solder Temperatures: 260ºC for 10 s (maximum)

See package dimensions on last page

ELECTRICAL CHARACTERISTICS

WORKING

MINIMUM

BREAKDOWN

VOLTAGE

FORWARD

VOLTAGE

MAXIMUM

REVERSE

CURRENT

MAXIMUM

REVERSE

RECOVERY

TIME

AVERAGE

RECTIFIED

PEAK

REVERSE

VOLTAGE

CURRENT AMPS

@ 50µA

@ V

@ 9A (pulsed)

TYPE

RWM

MIN

MAX

25^oC

µA

100^oC

25^oC

AMPS

3.0

150^oC

AMPS

0.7

VOLTS

100V

200V

400V

500V

600V

VOLTS

150

200

250

300

400

µA

1N5186US

1N5187US

1N5188US

1N5189US

1N5190US

120V

240V

480V

550V

660V

3.0

0.7

0.9V

1.5V

2.0

100

3.0

0.7

3.0

0.7

3.0

0.7

Microsemi

Page 1

12-10-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N5186US thru 1N5190US

VOIDLESS-HERMETICALLY SEALED

SURFACE MOUNT FAST RECOVERY

GLASS RECTIFIERS

S C O T T S D A L E D I V I S I O N

SYMBOLS & DEFINITIONS

Symbol

Definition

Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.

V_BR

Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating

V_RWM

V_F

temperature range.

Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.

Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and

I_R

temperature.

Reverse Recovery Time: The time interval between the instant the current passes through zero when

changing from the forward direction to the reverse direction and a specified decay point after a peak reverse

current occurs.

PACKAGE DIMENSIONS

NOTE: This Package Outline has also previously

been identified as “D-5B”

PAD LAYOUT

INCHES

0.288

0.070

7.32

1.78

3.94

INCHES

MIN

MAX

MIN

5.21

MAX

5.72

ECT

.205

.137

.019

.003

.225

0.155

.142

.028

---

3.48

0.48

0.08

3.61

0.711

---

Note: If mounting requires adhesive

separate from the solder, an additional

0.080 inch diameter contact may be

placed in the center between the pads

as an optional spot for cement.

Microsemi

Page 2

12-10-2004 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

相关型号：