MX6080US [MICROSEMI]

Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2;


型号：	MX6080US
厂家：	Microsemi
描述：	Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon, HERMETIC SEALED, GLASS, G, MELF-2 快速恢复能力电源超快恢复二极管快速恢复二极管超快速恢复能力电源
文件：	总3页 (文件大小：121K)
中文：	中文翻译
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1N6073US thru 1N6081US

VOIDLESS HERMETICALLY SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS POWER

RECTIFIERS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is ideal for high-reliability

applications where a failure cannot be tolerated. These 3, 6, and 12 Amp rated

rectifiers (T_EC=70ºC) in different package sizes with working peak reverse

voltages from 50 to 150 volts are hermetically sealed using voidless-glass

construction and an internal “Category I” metallurgical bond. These devices

are also available in axial-lead package configurations for through-hole

mounting by deleting the “US” suffix (see separate data sheet for 1N6073 thru

1N6081). Microsemi also offers numerous other rectifier products to meet

higher and lower current ratings with various recovery time speed requirements

including standard, fast and ultrafast device types in both through-hole and

surface mount packages.

Package “A”

(or “D-5A”)

Package “E”

(or “D-5B”)

Package “G”

(or “D-5C”)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Popular 1N6073US to 1N6081US series

Voidless hermetically-sealed glass package

Extremely robust construction

•

Ultrafast recovery rectifier series 50 to 150 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance for higher power

Triple-layer passivation

Internal “Category I” Metallurgical bonds

•

Options for screening in accordance with MIL-PRF-

19500/503 for JAN, JANTX, JANTXV, or JANS by

using a MQ, MX, MV or MSP prefix respectively , e.g.

MX6076, MV6079, MSP6081, etc.

Controlled avalanche with peak reverse power

capability

•

Inherently radiation hard as described in Microsemi

MicroNote 050

•

Axial-leaded equivalents also available (see separate

data sheet for 1N6073 thru 1N6081)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Junction Temperature: -65^oC to +155^oC

Storage Temperature: -65^oC to +155^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

Peak Forward Surge Current @ 25^oC: 35 Amps for

1N6073US-6075US, 75 Amps for 1N6076US-6078US,

and 175 Amps for 1N6079US-6081US at 8.3 ms half-

sine wave

Average Rectified Forward Current (I_O) at T_EC= +70^oC:

1N6073US thru 1N6075US: 3.0 Amps

1N6076US thru 1N6078US: 6.0 Amps

1N6079US thru 1N6081US: 12.0 Amps

Average Rectified Forward Current (I_O) at T_A=55^oC:

1N6073US thru 1N6075US: 0.85 Amps

1N6076US thru 1N6078US: 1.3 Amps

1N6079US thru 1N6081US: 2.0 Amps

TERMINATIONS: End caps are Copper with

Tin/Lead (Sn/Pb) finish. Note: Previous inventory

had solid Silver end caps with Tin/Lead finish.

•

MARKING: None

•

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 1N6073 thru 1N6075: 193 mg

1N6076 thru 1N6078: 539 mg

1N6079 thru 1N6081: 1100 mg

•

See package dimensions and recommended pad

layouts on last page for all three package sizes

•

Thermal Resistance (R_θ_JEC): 13^oC/W for 1N6073US-

6075US, 8.5^oC/W for 1N6076US-6078US, and

5.0^oC/W for 1N6079US-6081US

Solder temperature: 260^oC for 10 s (maximum)

1-17-2007 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N6073US thru 1N6081US

VOIDLESS HERMETICALLY SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS POWER

RECTIFIERS

S C O T T S D A L E D I V I S I O N

ELECTRICAL CHARACTERISTICS @ 25^oC unless otherwise specified

WORKING

PEAK

REVERSE

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

(PULSED)

MAXIMUM

REVERSE

RECOVERY

TIME*

AVERAGE

RECTIFIED

AVERAGE

RECTIFIED

PULSED

TEST

CURRENT

MAXIMUM

REVERSE

CURRENT

MAXIMUM

SURGE

CURRENT

TYPE

CURRENT I

@ V

@ T = 70ºC @ T = 55ºC

RWM

FSM

RWM

VOLTS

100

150

100

150

100

150

VOLTS

2.04

1.76

1.50

AMPS

9.4

AMPS

3.0

6.0

12.0

AMPS

0.85

1.3

2.0

AMPS

175

μA

1.0

5.0

10.0

1N6073US

1N6074US

1N6075US

1N6076US

1N6077US

1N6078US

1N6079US

1N6080US

1N6081US

9.4

18.8

37.7

2.0

*NOTE: I_F= 0.5 A, I_RM= 1.0 A, and I_R(REC)= 0.25 A

SYMBOLS & DEFINITIONS

Symbol

Definition

Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.

V_BR

Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating

temperature range.

Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.

V_RWM

V_F

Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and

temperature.

I_R

Reverse Recovery Time: The time interval between the instant the current passes through zero when

changing from the forward direction to the reverse direction and a specified recovery decay point after a peak

reverse current is reached.

PACKAGE DIMENSIONS

PACKAGE A (1N6073US thru 1N6075US)

NOTE: This Package Outline has also previously

been identified as “D-5A”

PAD LAYOUT

INCHES

0.246

6.25

1.70

2.67

INCHES

0.067

MIN

MAX

.103

.200

MIN

2.46

4.70

MAX

2.62

5.08

0.105

ECT

.097

.185

.019

.003

Note: If mounting requires adhesive

separate from the solder, an additional

0.060 inch diameter contact may be

placed in the center between the pads

as an optional spot for cement.

.028

---

0.48

0.08

0.71

---

1-17-2007 REV C

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N6073US thru 1N6081US

VOIDLESS HERMETICALLY SEALED

SURFACE MOUNT ULTRA FAST

RECOVERY GLASS POWER

RECTIFIERS

S C O T T S D A L E D I V I S I O N

PACKAGE E (1N6076US thru 1N6078US)

E-MELF-PKG (D-5B)

Note: If mounting requires adhesive separate from the solder,

an additional 0.080 inch diameter contact may be placed in the

center between the pads as an optional spot for cement as

shown in the pad layout.

PACKAGE G (1N6079US thru 1N6081US)

G-MELF-PKG (D-5C)

Note: If mounting requires adhesive separate from the solder,

an additional 0.090 inch diameter contact may be placed in the

center between the pads as an optional spot for cement as

shown in the pad layout.

1-17-2007 REV C

Microsemi

Scottsdale Division

Page 3

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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