MX6100A [MICROSEMI]

Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14;


型号：	MX6100A
厂家：	Microsemi
描述：	Rectifier Diode, 7 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-14
文件：	总2页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

6100A

Isolated Diode Array with

HiRel MQ, MX, MV, and SP Screening Options

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These low capacitance diode arrays are multiple, discrete, isolated junctions

fabricated by a planar process and mounted in a 14-PIN package for use as steering

diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing them

either to the positive side of the power supply line or to ground (see figure 1). An

external TVS diode may be added between the positive supply line and ground to

prevent overvoltage on the supply rail. They may also be used in fast switching core-

driver applications. This includes computers and peripheral equipment such as

magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding

or encoding applications. These arrays offer many advantages of integrated circuits

such as high-density packaging and improved reliability. This is a result of fewer

pick and place operations, smaller footprint, smaller weight, and elimination of

various discrete packages that may not be as user friendly in PC board mounting.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

14-PIN Ceramic

Flat Pack

FEATURES

APPLICATIONS / BENEFITS

•

High Frequency Data Lines

RS-232 & RS-422 Interface Networks

Ethernet: 10 Base T

Computer I/O Ports

LAN

Switching Core Drivers

IEC 61000-4 Compatible (See Circuit in

Figure 1)

•

Hermetic Ceramic Package

Isolated Diodes to Eliminate Cross-Talk Voltages

High Breakdown Voltage V_BR> 75 V at 5 μA

Low Leakage I_R< 100 nA at 40 V

Low Capacitance C < 4.0 pF

Switching Speeds less than 10 ns

Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or SP prefixes

respectively to part numbers. For example, designate

MX6100A for a JANTX screen.

61000-4-2 (ESD): Air 15 kV, contact – 8 kV

61000-4-4 (EFT): 40 A – 5/50 ns

61000-4-5 (surge): 12 A, 8/20 µs

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

14-PIN Ceramic Flat Pack

•

Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)

Continuous Forward Current of 300 mA dc (Note 1 & 3)

Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)

400 mW Power Dissipation per Junction @ 25^oC

Weight 0.29 grams (approximate)

Marking: Logo, part number, date code and

dot identifying pin #1

•

Carrier Tubes; 19 pcs (standard)

500 mW Power Dissipation per Package @ 25^oC (Note 4)

Operating Junction Temperature range –65 to +150^oC

Storage Temperature range of –65 to +150^oC

NOTE 1: Each Diode

NOTE 2: Pulsed: P_W= 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/^oC above +25^oC

NOTE 4: Derate at 4.0 mW/^oC above +25^oC

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25^oC unless otherwise specified

MAXIMUM

REVERSE

RECOVERY TIME

trr

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

RECOVERY

TIME

MAXIMUM

FORWARD

VOLTAGE

MATCH

MAXIMUM

REVERSE

CURRENT

MAXIMUM

REVERSE

CURRENT

MAXIMUM

CAPACITANCE

(PIN TO PIN)

I = I_R= 10 mAdc

C_t

= 1 mAdc

I = 100 mA

V_R= 0 V

F = 1 MHz

I = 100 mA

R = 100 ohms

I = 10 mA

PART

NUMBER

(Note 1)

V_R= 40 V

µA

V_R= 20 V

6100A

0.1

4.0

NOTE 1: Pulsed: P_W= 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

3-27-2007

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

6100A

Isolated Diode Array with

HiRel MQ, MX, MV, and SP Screening Options

S C O T T S D A L E D I V I S I O N

SYMBOLS & DEFINITIONS

Symbol

V_BR

DEFINITION

Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.

Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.

V_F

Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and

temperature.

I_R

Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in

picofarads.

C_t

SCHEMATIC

PACKAGE DIMENSIONS

CIRCUIT

Supply rail (+V_CC)

Symbol

Inches

Max

Millimeters

I/O Port

Min

Max

9.91

6.60

2.41

9.40

.390

.260

.095

.370

.235

.045

.250

.005

.026

5.97

1.14

6.35

0.13

0.66

GND (or -V_CC)

.045

1.14

Steering Diode Application

.050 BSC

1.27 BSC

FIGURE 1

.003

.006

.280

.019

0.08

0.15

7.11

0.48

.010

0.25

3-27-2007

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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