MXLCE18AE3TR [MICROSEMI]
Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN;
| 型号： | MXLCE18AE3TR |
| 厂家： | 
Microsemi |
| 描述： | Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN |
| 文件： | 总4页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
- High Reliability controlled devices
1500 Watt Low Capacitance
Transient Voltage Suppressor
- Unidirectional (A) construction
- Plastic encapsulated TVS series for Thru Hole mounting
- Selections for 6.5 to 170 V standoff voltages (VWM)
LEVELS
M, MA, MX, MXL
DEVICES
MLCE6.5A thru MLCE170A, e3
FEATURES
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Unidirectional construction. For bidirectional option see Figure 4.
Suppresses transients up to 1500 watts @10/1000µs (see Figure 1)
Clamps transients in less than 100 pico seconds
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote
129 for more details on the screening options.
.
.
Surface mount equivalent packages also available as MSMC(G/J)LCE6.5A - MSMC(G/J)LCE170A in
separate data sheet (consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
.
.
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current ID
CASE 1
APPLICATIONS / BENEFITS
.
.
.
Protection from switching transients and induced RF
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part
1, par 2.4.1.1)
.
.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
o
o
o
Class 1: MLCE6.5A to MLCE170A
Class 2: MLCE6.5A to MLCE150A
Class 3: MLCE6.5A to MLCE70A
Class 4: MLCE6.5A to MLCE36A
.
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
o
o
o
Class 1 : MLCE6.5A to MLCE90A
Class 2: MLCE6.5A to MLCE45 A
Class 3: MLCE6.5A to MLCE22A
Class 4: MLCE6.5A to MLCE11A
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
o
Class 2: MLCE6.5A to MLCE20A
Class 3: MLCE6.5A to MLCE10A
MAXIMUM RATINGS
.
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (see Figure 1) with impulse repetition
rate of 0.01% or less* at lead temperature TL of 25°C
.
.
Operating & Storage Temperatures: -65 ºC to +150 ºC
Thermal Resistance: 22 ºC/W junction to lead at 3/8 inch (10 mm) from body, or 82 ºC/W junction to
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width 1 mm, length 25mm
.
.
Steady-State Power dissipation*: 5 watts at TL = 40 ºC, or 1.52 watts at TA = 25 ºC when mounted on
FR4 PC board described for thermal resistance
Solder Temperatures: 260 ºC for 10 s (maximum)
* TVS devices are not typically used for dc power dissipation and are instead operated at ≤ VWM except for transients that briefly
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection
details in rated peak power for unidirectional and bidirectional configurations respectively.
RF01009 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
MECHANICAL AND PACKAGING
.
.
Void-free transfer molded thermosetting epoxy body meeting UL94V-0
Tin-Lead (90 % Sn, 10 % Pb) or RoHS (100% Sn) Compliant annealed matte-Tin plating readily solderable per
MIL-STD-750, method 2026
.
.
.
.
.
Body marked with part number
Cathode indicated by band. No cathode band on bi-directional devices.
Available in Bulk or custom TAPE & REEL packaging
TAPE & REEL standard per EIA-296 (add “TR” suffix to part number)
Weight: 1.5 gram (approximately)
PACKAGE DIMENSIONS
NOTE: Cathode indicated by band
All dimensions in inches
millimeters
SYMBOLS & DEFINITIONS
Symbol
VWM
PPP
Definition
Symbol
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
IPP
VC
Peak Pulse Current
Clamping Voltage
Breakdown Current for VBR
VBR
ID
IBR
RF01009 Rev A, June 2010
High Reliability Product Group
Page 2 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI
PART
NUMBER
REVERSE
STANDOFF
VOLTAGE
VWM
(Note 1)
BREAKDOWN VOLTAGE
VBR @ IBR
MAXIMUM
STANDBY
CURRENT
MAXIMUM
MAXIMUM
MAXIMUM
WORKING
INVERSE
BLOCKING
VOLTAGE
INVERSE
BLOCKING
LEAKAGE
CURRENT
PEAK
CLAMPING PEAK PULSE CAPACITANCE
VOLTAGE
VC @ IPP
INVERSE
BLOCKING
VOLTAGE
CURRENT
IPP
@ 0 V
f = 1 MHz
ID @VWM
VWIB
IIB @ VWIB
VPIB
V
V
µA
V
V
A
A
1000
500
250
100
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
VMIN
VMAX
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
98.0
111
mA
pF
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
90
MLCE6.5A
MLCE7.0A
MLCE7.5A
MLCE8.0A
MLCE8.5A
MLCE9.0A
MLCE10A
MLCE11A
MLCE12A
MLCE13A
MLCE14A
MLCE15A
MLCE16A
MLCE17A
MLCE18A
MLCE20A
MLCE22A
MLCE24A
MLCE26A
MLCE28A
MLCE30A
MLCE33A
MLCE36A
MLCE40A
MLCE43A
MLCE45A
MLCE48A
MLCE51A
MLCE54A
MLCE58A
MLCE60A
MLCE64A
MLCE70A
MLCE75A
MLCE80A
MLCE90A
MLCE100A
MLCE110A
MLCE120A
MLCE130A
MLCE150A
MLCE160A
MLCE170A
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
80
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
88.7
100
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
113
100
100
100
100
100
97
88
82
75
70
65
61
57
54
51
46
42
39
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
150
150
150
150
150
150
150
150
300
300
300
300
300
300
300
300
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
200
200
200
200
200
200
200
400
400
400
400
400
400
36
33
31
28.1
25.8
23.3
21.6
20.6
19.4
18.2
17.2
16.0
15.5
14.6
13.3
12.4
11.6
10.3
9.3
8.4
7.8
7.2
6.2
5.8
5.4
90
90
90
90
90
90
90
90
90
90
90
90
121
129
146
162
178
193
209
243
90
5
5
5
5
5
5
5
5
100
110
120
130
150
160
170
111
122
133
144
167
178
189
123
135
147
159
185
197
209
259
275
NOTE 1: TVS are normally selected according to the reverse “Standoff Voltage” (VWM) that should be equal to or greater than
the dc or continuous peak operating voltage level
RF01009 Rev A, June 2010
High Reliability Product Group
Page 3 of 4
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
GRAPHS
Pulse Time (tw) in s
FIGURE 1 - Peak Pulse Power vs. Pulse Time (tW) in s
GRAPHS
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 2. As a further option for unidirectional applications, an
additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in
Figure 3. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the
internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should
be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. The
Microsemi recommended rectifier part number is the “ELCR80” for the application in Figure 5. If using two (2) low
capacitance TVS devices in anti-parallel for bidirectional applications, this added protective feature for both directions
(including the reverse of each rectifier diode) is also provided. The unidirectional and bidirectional configurations in Figure 3
and 4 will both result in twice the capacitance of Figure 2.
FIGURE 2
TVS with internal Low
Capacitance Diode
FIGURE 3
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel.
FIGURE 4
Optional Bidirectional
configuration (two TVS
devices in anti-parallel)
RF01009 Rev A, June 2010
High Reliability Product Group
Page 4 of 4
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