NFP2033 [MICROSEMI]

Power Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FP-3;
NFP2033
型号: NFP2033
厂家: Microsemi    Microsemi
描述:

Power Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, FP-3

放大器 晶体管
文件: 总2页 (文件大小:28K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
T
ECHNICAL
D
ATA  
1 AMPERE  
NPN  
NFP2033  
SURFACE MOUNT  
3 Pin Flat Pack  
HIGH VOLTAGE NPN TRANSISTOR  
SURFACE MOUNT AMPLIFIER  
MAXIMUM RATINGS  
RATINGS  
Collector-Emitter Voltage  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
NFP2033  
350  
UNITS  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current – Peak  
400  
6.0  
1.0  
(1)  
Base Current -- Continuous  
IB  
PD  
0.5  
Adc  
Total Power Dissipation @ TC = 250C  
W
Derate above 250C  
Operating & Storage Junction Temperature Range  
THERMAL CHARACTERISTICS  
CHARACTERISTICS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Free-Air  
TBD  
-65 to +200  
mW/0C  
TJ, Tstg  
0C  
SYMBOL  
RqJC  
MAX.  
TBD  
TBD  
UNITS  
0C\W  
0C\W  
RqJA  
(1) Pulse Test: Pulse Width = 10ms, Duty Cycle £ 10%  
MECHANICAL OUTLINE  
6 Lake Street, Lawrence, MA 01841  
REV: A  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  
BIPOLAR POWER TRANSISTOR - NFP2033 (con’t)  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Collector-Emitter Sustaining Voltage  
IC = 50 mAdc, IB = 0  
VCEO(sus)  
350  
Vdc  
Collector-Emitter Cutoff Current  
VCE = 300 Vdc, IB = 0  
Collector-Emitter Cutoff Current  
VCE = 400 Vdc, VBE = 1.5 Vdc  
Emitter-Base Cutoff Current  
VEB = 5.0 Vdc, IC = 0  
ICEO  
ICEX  
20  
500  
20  
mAdc  
mAdc  
mAdc  
IEBO  
ON CHARACTERISTICS (1)  
DC Current Gain  
IC = 2.0 mAdc, VCE = 10 Vdc  
IC = 20 mAdc, VCE = 10 Vdc  
Collector-Emitter Saturation Voltage  
IC = 50 mAdc, IB = 5.0 mAdc  
Base-Emitter Saturation Voltage  
IC = 50 mAdc, IB = 4.0 mAdc  
DYNAMIC CHARACTERISTICS  
Current-Gain -- Bandwidth Product  
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 MHz  
Output Capacitance  
hFE  
30  
30  
160  
0.6  
1.4  
VCE(sat)  
VBE(sat)  
Vdc  
Vdc  
¦ T  
15  
VCB = 10 Vdc, IE = 0, f = 1.0 MHz  
Input Capacitance  
VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz  
(1)Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
Cobo  
Cibo  
10  
75  
pF  
pF  
6 Lake Street, Lawrence, MA 01841  
REV: A  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 2 of 2  

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