SM05E3/TR7 [MICROSEMI]
Transient Suppressor,;
| 型号： | SM05E3/TR7 |
| 厂家： | 
Microsemi |
| 描述： | Transient Suppressor, |
| 文件： | 总2页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM03 thru SM36, e3
Bidirectional/Unidirectional TVSarray ™
S C O T T S D A L E D I V I S I O N
PRODUCT PREVIEW
DESCRIPTION
TVSarray™ SERIES
DESCRIPTION (300 watt)
This 3 pin TRANSIENT VOLTAGE SUPPRESSOR offers 2 unidirectional or 1
bidirectional protection at the board level from voltage transients caused by
electrostatic discharge (ESD) as defined by IEC 61000-4-2, electrical fast transients
(EFT) per IEC 61000-4-4.
Unidirectional protection can be accomplished by connecting the Input/Output lines
to pins 1 and 2 and pin 3 to common ground. In a bidirectional configuration pin 1 or
pin 2 is connected to common or ground. Pin 3 is not connected. The SM03 thru
SM36 product provides board level protection from static electricity and other
induced voltage surges that can damage sensitive circuitry.
APPLICATIONS
• EIA-RS232 data rate
19.6kbs
• EIA-RS422 data rate
10Mbs
• EIA-RS423 data rate
100kbs
These TRANSIENT VOLTAGE SUPPRESSOR (TVS) Diode Arrays protect 3.0/3.3
volt components such as DRAM’s, SRAM’s, CMOS, HCMOS, HSIC, and low voltage
interfaces up to 36 Volts. Because of the physical size, weight and protection
capabilities, this product is ideal for use in but not limited to miniaturized electronic
equipment such as hand held instruments, computers, computer peripherals and cell
phones. RoHS Compliant devices also available be adding an e3 suffix.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
PACKAGING
•
•
•
•
Protects 3.0/3.3 up through 36V components
Protects 2 undirectional or 1 bidirectional line
Provides electrically isolated protection
• Tape & Reel per EIA Standard 481
• 7 inch reel 3,000 pieces (STANDARD)
RoHS Compliant devices available by adding e3 suffix
MECHANICAL
MAXIMUM RATINGS
•
•
CASE: Molded epoxy SOT-23 (meets UL94V-0)
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating readily solderably per MIL-
STD-750 method 2026
WEIGHT: 0.014 grams (approximate)
MARKING: See marking code below
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse power 300 watts (8/20 µs Figure 1)
Pulse Repetition Rate: < .01%
•
•
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
STAND
OFF
VOLTAGE
VWM
BREAKDOWN
VOLTAGE
VBR
CLAMPING
VOLTAGE
VC
@ 1 Amp
CLAMPING
VOLTAGE
VC
@ 5 Amp
STANDBY
CURRENT
ID
CAPACITANCE CAPACITANCE
@0V 1 MHz)
C
@0V 1 MHz)
C
PART
DEVICE
@1 mA
@ VWM
Pin 1-3 or 2-3
Pin 1-2
NUMBER MARKING
(FIGURE 2)
(FIGURE 2)
VOLTS
MAX
3.3
VOLTS
MIN
4
VOLTS
MAX
7
9.8
19
24
43
60
VOLTS
MAX
9
11
24
30
55
75
µA
MAX
200
20
0.1
0.1
0.1
0.1
pF
MAX
600
400
160
130
80
pF
MAX
300
200
80
65
40
SM03
SM05
SM12
SM15
SM24
SM36
M03
M05
M12
M15
M24
M36
5.0
6.0
12.0
15.0
24.0
36.0
13.3
16.7
26.7
40.0
70
35
Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product selected
voltage should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.
Copyright © 2005
9-13-2005 REVJ
Microsemi
Scottsdale Division
Page 1
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SM03 thru SM36, e3
Bidirectional/Unidirectional TVSarray ™
S C O T T S D A L E D I V I S I O N
PRODUCT PREVIEW
SYMBOLS & DEFINITIONS
DEFINITION
Symbol
VWM
VBR
VC
Rated stand off voltage: Maximum dc voltage that can be applied over the operating temperature range.
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 µs.
ID
Standby Current: Leakage current at VWM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in Pico
Farads.
C
GRAPHS
10000
1000
8/20µs 300W Pulse
100
10
.1
1
10
100
1000
10000
FIGURE 1
Peak Pulse Power Vs Pulse Time t=µsec
FIGURE 2
Pulse Wave Form
PACKAGING AND SCHEMATIC
SCHEMATIC
Copyright © 2005
9-13-2005 REVJ
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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