SMDA05C-7E3/TR13 [MICROSEMI]
TVS DIODE 5VWM 11VC 8SOIC;型号: | SMDA05C-7E3/TR13 |
厂家: | Microsemi |
描述: | TVS DIODE 5VWM 11VC 8SOIC 局域网 光电二极管 电视 |
文件: | 总2页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMDA03 thru SMDA24C, e3
and SMDB03 thru SMDB24C, e3
4 LINE TVSarray ™
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged in an SO-8
configuration giving protection to 4 unidirectional or bi-directional data or interface
lines. It is designed for use in applications where protection is required at the board
level from voltage transients caused by electrostatic discharge (ESD) as defined in
IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of
secondary lightning. These TVS arrays have peak pulse power ratings of 300 watts
(SMDA) and 500 watts (SMDB) for an 8/20 µsec pulse. They are suitable for
protection of sensitive circuitry consisting of TTL, CMOS, DRAM’s, SRAM’s,
HCMOS, HSIC and low-voltage interfaces from 3.3 volts to 24 volts
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
PACKAGING
•
•
•
•
Protects 3.0/3.3 volt up to 24 volt components
Protects 4 unidirectional or bidirectional lines
Provides electrically-isolated protection
•
•
•
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (STANDARD)
Carrier tubes; 95 pcs (OPTIONAL)
RoHS Compliant devices available by adding “e3” suffix
MAXIMUM RATINGS
MECHANICAL
•
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
SMDA Peak Pulse Power: 300 watts (Fig. 1 and 2)
SMDB Peak Pulse Power: 500 watts (Fig. 1 and 2)
Pulse Repetition Rate: <.01%
•
•
CASE: Void-free transfer molded thermosetting epoxy
compound meeting UL 94V-0 flammability classification
TERMINALS: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750 method
2026
WEIGHT: 0.066 grams (approximate)
MARKING: MSC Logo, device marking code*, date code
Pin #1 defined by dot on top of package
•
•
•
ELECTRICAL CHARACTERISTICS PER LINE @ 25oC Unless otherwise specified
BREAKDOWN
VOLTAGE
CLAMPING
VOLTAGE
CLAMPING
VOLTAGE
STANDBY
(LEAKAGE)
CURRENT
TEMPERATURE
COEFFICIENT
STAND OFF
VOLTAGE
CAPACITANCE
f =1 MHz
C
VBR
VC
VC
of VBR
VWM
DEVICE
MARKING
CODE *
ID
αVBR
PART
NUMBER
@0V
pF
I
BR = 1 mA
VOLTS
MIN
IPP = 1 A
IPP = 5 A
@VWM
(Figure 2)
VOLTS
(Figure 2)
VOLTS
VOLTS
MAX
µA
mV/°C
TYP
MAX
MAX
MAX
TYP
SMDA03
SMDA03C
SMDB03
SMDB03C
SMDA05
SMDA05C
SMDB05
SMDB05C
SMDA12
SMDA12C
SMDB12
SMDB12C
SMDA15
SMDA15C
SMDB15
SMDB15C
SMDA24
SMDA24C
SMDB24
SMDB24C
SDK
SDL
PDK
PDL
SDA
SDB
PDA
PDB
SDC
SDD
PDC
PDD
SDE
SDF
PDE
PDF
SDG
SDH
PDG
PDH
3.3
3.3
3.3
3.3
5.0
5.0
5.0
5.0
12.0
12.0
12.0
12.0
15.0
15.0
15.0
15.0
24.0
24.0
24.0
24.0
4
4
4
4
6
6
6
6
13.3
13.3
13.3
13.3
16.7
16.7
16.7
16.7
26.7
26.7
26.7
26.7
7
7
7
7
9
9
9
9
200
400
200
400
20
40
20
40
1
1
1
1
1
1
1
1
1
1
1
1
600
300
600
300
400
200
400
200
185
95
185
95
140
70
-3
-5
-3
-5
3
1
3
1
10
8
10
8
13
11
13
11
30
28
30
28
9.8
9.8
9.8
9.8
19
19
19
19
24
24
24
24
43
43
43
43
11
11
11
11
24
24
24
24
30
30
30
30
55
55
55
55
140
70
90
45
90
45
Note: Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product selected voltage should be equal to or
greater than the continuous peak operating voltage of the circuit to be protected. Part numbers with a C suffix are bi-directional devices.
* Device marking has an e3 suffix added for the RoHS Compliant options, e.g. SDKe3, SDLe3, SDCe3, SDEe3, PDHe3, etc.
Copyright © 2005
Microsemi
Page 1
11-11-2005 REV R
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
SMDA03 thru SMDA24C, e3
and SMDB03 thru SMDB24C, e3
4 LINE TVSarray ™
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Symbol
VWM
Definition
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.
VWM must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: Minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 µs.
VBR
VC
ID
C
Standby Current: Leakage current at VWM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
GRAPHS
10.0
1.0
0.1
0.01
Figure 1
Figure 2
Peak Pulse Power vs Pulse Time
Pulse Wave Form
OUTLINE AND SCHEMATIC
PAD LAYOUT
INCHES
MILLIMETERS
DIM
A
B
C
D
F
G
J
K
L
MIN
MAX
0.197
0.158
0.069
0.021
0.050
MIN
4.77
3.381
1.35
0.28
0.41
MAX
5.00
4.01
1.75
0.53
1.27
0.188
0.150
0.053
0.011
0.016
8
7
6
5
1
2
8
7
1
2
3
4
3
4
6
5
0.050 BSC
1.27 BSC
0.006
0.005
0.189
0.228
0.010
0.008
0.206
0.244
0.15
0.10
4.80
5.79
0.25
0.20
5.23
6.19
Unidirectional
Bidirectional
P
OUTLINE
SCHEMATIC
Copyright © 2005
11-11-2005 REV R
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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