SP6630 [MICROSEMI]
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.4A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2 PIN;
| 型号： | SP6630 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.4A, 900V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2 PIN 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总4页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6626US thru 1N6631US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
“E” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
•
Popular JEDEC registered 1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
•
•
•
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Triple-layer passivation
Internal “Category I” Metallurgical bonds
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Controlled avalanche with peak reverse power
capability
•
•
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g. SP6626,
SP6629, etc.
•
Inherently radiation hard as described in Microsemi
MicroNote 050
Surface mount equivalents also available in a square end-
cap MELF configuration with “US” suffix (see separate
data sheet for 1N6626US thru 1N6631US)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
Junction Temperature: -65oC to +150oC
Storage Temperature: -65oC to +175oC
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
Peak Forward Surge Current @ 25oC: 75A (except
1N6631 which is 60A)
TERMINATIONS: Axial-leads are Tin/Lead
(Sn/Pb) over Copper.
•
•
•
•
•
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 750 mg
Note: Test pulse = 8.3ms, half-sine wave.
•
Average Rectified Forward Current (IO) at TL= +75oC
(L=.375 inch from body):
1N6626 thru 1N6628
1N6629 thru 1N6631
2.3 A
1.8 A
See package dimensions on last page
(Derate IO linearly at 1.0%/oC for TL> +75oC)
•
Average Rectified Forward Current (IO) at TA=25oC:
1N6626 thru 1N6628
1N6629 thru 1N6631
1.75 A
1.40 A
(Derate IO linearly at 0.80%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal resistance
from mounting point to ambient is sufficiently controlled
where TJ(max) is not exceeded. See MIL-PRF-19500/590)
•
•
•
Thermal Resistance L= 0.375 inch (RθJL): 22oC/W
Capacitance at VR= 10 V: 40 pF
Solder temperature: 260oC for 10 s (maximum)
Copyright © 2009
10-01-2009 REV F; SA7-57.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
ELECTRICAL CHARACTERISTICS @ 25oC
TYPE
MINIMUM
BREAK-
DOWN
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
MAXIMUM
REVERSE
CURRENT IR
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
PEAK
RECOVERY RECOVERY
CURRENT VOLTAGE
RM (rec)
FORWARD
NUMBER
REVERSE
VOLTAGE
VRWM
@
VOLTAGE
I
VF @ IF
VFRM Max
VRWM
VR
IF = 2 A,
100 A/μs
Note 2
IF = 0.5 A
TA=25oC
TA=150oC
I
R = 50 μA
t
t
rr
Note 2
ns
45
45
45
60
60
80
rr
t = 12 ns
r
Note 1
ns
30
30
30
50
50
60
V
V @ A
V @ A
V
A
V
8
8
μA
2.0
2.0
2.0
2.0
2.0
4.0
μA
500
500
500
500
500
600
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631
220
440
660
880
990
1100
1.35V @ 2.0 A 1.50V @ 4.0A
1.35V @ 2.0 A 1.50V @ 4.0A
1.35V @ 2.0 A 1.50V @ 4.0A
1.40V @ 1.4 A 1.70V @ 3.0A
1.40V @ 1.4 A 1.70V @ 3.0A
1.60V @ 1.4 A 1.95V @ 2.0A
200
400
600
800
900
1000
3.5
3.5
3.5
4.2
4.2
5.0
8
12
12
20
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, 100 A/μs MIL-STD-750, Method 4031,
Condition D.
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VRWM
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
IR
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
trr
CHARTS AND GRAPHS
FIGURE 1
Typical Forward Current
vs
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Forward Voltage
Copyright © 2009
10-01-2009 REV F; SA7-57.pdf
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
FIGURE 3
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
Typical Reverse Current vs.
Applied Reverse Voltage
10ms
FIGURE 5
FIGURE 6
Forward Pulse Current vs.
Pulse Duration
Reverse Pulse Power vs.
Pulse Duration
Copyright © 2009
10-01-2009 REV F; SA7-57.pdf
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N6626 thru 1N6631
VOIDLESS-HERMETICALLY-SEALED
ULTRA FAST RECOVERY GLASS
S C O T T S D A L E D I V I S I O N
PACKAGE DIMENSIONS
Lead Tolerance = + .002 -.003 in
*Includes sections of the lead or fillet over which the lead diameter is uncontrolled.
Copyright © 2009
10-01-2009 REV F; SA7-57.pdf
Microsemi
Page 4
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
SP6631
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.4A, 1000V V(RRM), Silicon, HERMETIC SEALED, GLASS, E, 2 PIN
MICROSEMI
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