UES804HR2RE3 [MICROSEMI]
Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, DO-203AB, HERMETIC SEALED, METAL, DO-5, 2 PIN;
| 型号： | UES804HR2RE3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 50A, Silicon, DO-203AB, HERMETIC SEALED, METAL, DO-5, 2 PIN 功效 二极管 |
| 文件： | 总3页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UES804 UES804HR2
UES805 UES805HR2
ULTRAFAST RECTIFIERS,
S C O T T S D A L E D I V I S I O N
High Efficiency, 50ATM
DESCRIPTION
APPEARANCE
DO-5
The UES804 series of ultrafast high-efficiency rectifiers is specifically
designed for operation in power switching circuits operating at frequencies
of 20 kHz or higher. These devices have demonstrated capability in
passing power-stress testing to 25 thousand cycles with full-rated forward
current turned on and off without a heat sink. This forces case temperature
increases of 75 °C at which time the current is removed to simulate worst
case applications. The switching times increase relatively little with
temperature or at different currents.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
Very Low Forward Voltage
•
Power Switching Circuits 20 kHz and above
with minimal parasitic switching losses
Catch Diodes for Switching Regulators
Output Rectifiers for High Frequency Square-
Wave Inverters
Very Fast Recovery Times
•
•
High Reliability Screening Options with HR2 Suffix
(ie. UES804HR2)
•
•
•
Low Thermal Resistance
•
•
•
Extremely Robust in Power Cycling
High Surge Capability
Mechanically rugged
Standard Polarity is Cathode to Case. For Reverse
Polarity, Add Suffix R (ie. UES804R)
Hermetically Sealed
ABSOLUTE MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
•
•
•
Peak Inverse Voltage, UES804, UES804HR2……….200 V
Peak Inverse Voltage, UES805, UES805HR2……….300 V
Peak Inverse Voltage, UES806, UES806HR2……….400 V
Average DC Output Current, IO @ TC = 100oC………50 A
Surge Current, 8.3 ms …………………………………600 A
Thermal Resistance, Junction to Case……………0.8 oC/W
Operating and Storage Temp. Range…….-55oC to +150oC
•
•
Industry Standard DO-5 (DO-203AB) Package
with 11/16 inch Hex and 1/4-28 Threaded Stud
Hermetically Sealed Metal and Glass Case
Body
•
•
•
•
Metal Surface Finish: Tin-Lead Plated
Weight: 15.5 grams (approximate)
Maximum Stud Torque: 30 inch pounds
Marking: Part Number and Logo
ELECTRICAL CHARACTERISTICS
Maximum
Forward
Voltage
Maximum
Reverse
Current
Maximum
Reverse
Recovery
Time*
Working Peak
Reverse
Microsemi Part Number
Voltage
V
F
I
R
V
@ 50 A
RWM
t
@ VRWM
rr
tp = 300 µs
TC = 25oC
1.25 V
TC = 125oC
1.15 V
TC = 25oC
TC = 125oC
30 mA
UES804
UES805
UES806
UES804HR2
UES805HR2
UES806HR2
200 V
300 V
400 V
50 ns
70 µA
* Measured in circuit IF = 0.5 A, IR = 1 A, IREC = 0.25 A
Copyright 2003
Microsemi
Page 1
9-20-2004 REV B
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
UES804 UES804HR2
UES805 UES805HR2
ULTRAFAST RECTIFIERS,
S C O T T S D A L E D I V I S I O N
High Efficiency, 50ATM
GRAPHS and CIRCUIT
Copyright 2003
Microsemi
Scottsdale Division
Page 2
9-20-2004 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
UES804 UES804HR2
UES805 UES805HR2
ULTRAFAST RECTIFIERS,
S C O T T S D A L E D I V I S I O N
High Efficiency, 50ATM
NOTES:
1. Oscilloscope: Rise time ≤ 3ns; input impedance = 50Ω.
2. Pulse Generator: Rise time ≤ 8ns; source impedance 10Ω.
3. Current viewing resistor, non-inductive, coaxial
recommended.
OPTIONAL HIGH RELIABILITY (HR2) SCREENING
The following tests are performed on 100% of the devices.
SCREEN
MIL-STD-750
METHOD
1032
CONDITIONS
1. High Temperature
24 Hours @ TA = 150oC
2. Temperature Cycle
1051
F, 20 Cycles, -55 to +150oC. No dwell required @
25oC, T>10 min. @ extremes
3. Hermetic Seal
a. Fine Leak
1071
H, Helium
C, Liquid
b. Gross Leak
4. Thermal Impedance
5. Interim Electrical Parameters
3101
GO/NO GO
As applicable
6. High Temperature Reverse Bias (HTRB)
7. Final Electrical Parameters
As Applicable
GO/NO GO
t= 48 hours, Tc = 125°C with applicable bias conditions
As applicable
MECHANICAL SPECIFICATIONS
INCHES
.225 +/- .005
.060 MIN.
MILLIMETERS
A
B
C
D
E
F
5.72 +/- 0.13
1.52 MIN.
.156 +/- .020
.156 MIN. FLAT
.667 DIA. MAX
.090 MAX
3.96 +/- 0.51
3.96 MIN. FLAT
16.94 DIA. MAX
2.29 MAX.
17.20 +/- 0.25
9.53 MAX.
3.56 MIN. DIA.
25.40 MAX.
11.43 MAX.
11.13 +/- 0.38
1.98 MAX.
G
H
J
.677 +/- .010
.375 MAX.
.140 MIN. DIA.
1.000 MAX.
.450 MAX.
K
L
Notes:
1. Maximum stud torque: 30 inch pounds.
2. Maximum tension (90o) anode terminal 15 pounds for 30
seconds
M
N
.438 +/- .015
.078 MAX.
Copyright 2003
Microsemi
Page 3
9-20-2004 REV B
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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