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UPFS120P

更新时间：2025-07-09 05:47:29
品牌：MICROSEMI
描述：SURFACE MOUNT P - CHANNEL MOSKEY

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中文翻译

免费 PCB/SMT

UPFS120P 概述

SURFACE MOUNT P - CHANNEL MOSKEY 表面安装P - 通道MOSKEY 小信号场效应晶体管

UPFS120P 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：compliant风险等级：5.84
Is Samacsys：N外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最大漏极电流 (Abs) (ID)：1 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.9 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPFS120P 数据手册

通过下载UPFS120P数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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580 Pleasant Street  
Watertown, MA 02472  
Phone:(617) 926-0404  
F A X : (617) 924-1235  
UPFS120P  
Features  
•
•
•
•
•
•
POWERMITE 3 Surface Mount Package  
MOSFET with Schottky Rectifier for reverse voltage blocking  
Single 3 leaded device replaces 2 individual components  
Integral Heat Sink / Locking Tabs  
SURFACE MOUNT  
P – CHANNEL  
MOSKEY  
Supplied in 16mm Tape and Reel – 6000 units/reel  
Superior Low Thermal and Electrical capability  
Mechanical Characteristics  
•
•
•
•
•
Footprint Area of 16.51 mm2  
Case: Molded Epoxy  
Meets UL94VO at 1/8 inch  
Weight: 72 milligrams  
Lead and Mounting Temperatures: 260°C max for 10 seconds  
Description  
The MOSKEYcombines a MOSFET with a Schottky Recti-  
fier to provide reverse blocking capability in a single three  
leaded package. This device is well suited for applications  
such as battery chargers and switching where the intrinsic  
source-drain diode is an undesirable feature.  
Absolute Maximum Ratings at 25°C  
RATING  
SYMBOL  
VKSS  
VALUE  
+/- 20  
UNIT  
Vdc  
Vdc  
Cathode-to-Source Voltage  
Gate-to-Source Voltage  
Cathode Current:  
VGS  
+/- 10  
Continuous @ TA=25°C  
Single Pulsed  
IK  
1.0  
6.0  
Adc  
Apk  
Watts  
°C  
IKM  
Total Power Dissipation  
Storage Temperature  
Operating Temperature  
PD (1)  
T stg  
T op  
1.9  
-55 to 150°C  
-55 to 150°C  
°C  
Thermal Characteristics  
Thermal Resistance:  
Junction to Tab  
Rjtab  
20  
°C/Watt  
°C/Watt  
°C/Watt  
(1)Junction-to-ambient  
Rja (1)  
65  
(2)Junction-to-ambient  
Rja (2)  
150  
(1) Mounted on 2” square by 0.06’ thick FR4 board with a 1” x1” square 2 ounce copper pattern.  
(2) Mounted on 0.06 thick FR4 board, using recommended footprint.  
MSC 10-1-00  
PRELIMINARY  
UPFS120P  
Electrical Characteristics at 25°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Symbol Parameter  
Conditions  
Min Typ Max Units  
OFF CHARACTERISTICS  
BVKSS  
IKSSF  
IKSSR  
IGSS  
Cathode-Source Breakdown  
Voltage  
VGS= 0V; IK = 250uA  
20  
V
Zero Gate Voltage Cathode Current: VKS= -16V, VGS = 0V  
Forward  
1
1
uA  
mA  
nA  
Zero Gate Voltage Cathode  
Current:Reverse  
VKS= +16V, VGS = 0V  
Gate-Body Leakage Current  
VGS= +/- 8V, VKS = 0V  
100  
ON CHARACTERISTICS (pulsed 500us max, duty cycle < 2%)  
VGS(TH) Gate Threshold Voltage  
VKS > VGS; IK = 250uA  
IK = 250uA, Reference to 25°C  
1
3
1.9  
3.5  
3
V
DELTA  
Gate Threshold Voltage Temp  
mV/°C  
VGS(TH)/ Coefficient  
TJ  
VKS (ON) Static Cathode-Source On Voltage VGS = 4.5 V; IK = 1A  
VKS (ON) Static Cathode-Source On Voltage VGS = 4.5 ; IK = 0.5A  
750  
550  
mV  
mV  
A
IK(ON)  
Gfs  
On State Cathode Current  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VGS = 4.5 V; VKS = 5V  
VDS = 5V; IK = 0.5A  
3
S
Ciss  
Coss  
Crss  
VKS = 15 V; VGS = 0V, F = 1MHz  
VKS = 15 V; VGS = 0V, F = 1MHz  
VKS = 15 V; VGS = 0V, F = 1MHz  
165  
60  
25  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn On Delay Time  
Td(ON)  
Tr  
8
9
20  
20  
30  
10  
5
ns  
ns  
ns  
ns  
nC  
nC  
nC  
VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω  
VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω  
VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω  
VDD = 15V, IK = 1A, VGS = 10V, Rg = 6 Ω  
VDS = 15V, IK = 1A, VGS = 10V  
Turn On Rise Time  
Td(OFF)  
Tf  
Turn Off Delay time  
14  
2
Turn Off Fall time  
Qg  
Qgs  
Qgd  
Total Gate Charge  
3.5  
0.6  
0.8  
Gate-Source Charge  
VDS = 15V, IK = 1A, VGS = 10V  
Gate-Cathode Charge  
VDS = 15V, IK = 1A, VGS = 10V  
MSC 10-1-00  
PRELIMINARY  
UPFS120P  
MECHANICAL SPECIFICATIONS  
MSC 10-1-00  
PRELIMINARY  

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