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UPGA301AE3

更新时间：2025-07-09 05:47:29
品牌：MICROSEMI
描述：Nanosecond SCR SWITCH

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中文翻译

免费 PCB/SMT

UPGA301AE3 概述

Nanosecond SCR SWITCH 纳秒可控硅开关 可控硅整流器

UPGA301AE3 规格参数

是否Rohs认证：符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.7Is Samacsys：N
其他特性：HIGH RELIABILITY, HIGH SPEED外壳连接：ANODE
配置：SINGLE最大直流栅极触发电流：0.2 mA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
元件数量：1端子数量：2
最高工作温度：125 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE断态重复峰值电压：100 V
表面贴装：YES端子面层：Matte Tin (Sn) - annealed
端子形式：GULL WING端子位置：SINGLE
触发设备类型：SCRBase Number Matches：1

UPGA301AE3 数据手册

通过下载UPGA301AE3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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UPGA301Ae3  
Nanosecond SCR SWITCH  
S C O T T S D A L E D I V I S I O N  
KEY FEATURES  
DESCRIPTION  
The UPGA301Ae3 is Designed for Epoxy packaged, oxide passivated planar  
high current narrow-pulse switching SCR chips with metallurgic bonds on both  
applications where size and current sides to achieve high reliability. Internal  
ƒ Very low thermal resistance package  
ƒ Efficient heat path with integral  
locking bottom metal tab  
handling capability are critical.  
wire bond connection allows high current  
ƒ Full metallic bottom eliminates flux  
entrapment  
ƒ RoHS Compliant with e3 suffix  
ƒ High speed switching capability  
ƒ Compatible with high-speed insertion  
ƒ Low profile height of 1 mm  
These devices may be triggered on surge capability for narrow pulse  
using low power logic drivers from applications.  
(+0.8 V at 200 μA).  
IMPORTANT: For themost current data, consultMICROSEMI’swebsite:http://www.microsemi.com  
ABSOLUTE MAXIMUM RATINGS AT 25º C  
(UNLESS OTHERWISE SPECIFIED)  
APPLICATIONS/BENEFITS  
ƒ Reference Microsemi MicroNote 601  
and 602  
ƒ Nanosecond SCR switch for reliable  
high current pulse generators,  
modulators and photo-flash  
quenching  
ƒ Logic drive capability (0.8V, 200μA)  
ƒ Ideal for Laser Range finder and  
Camera Applications  
ƒ Ideal for Automotive Collision  
Avoidance Applications  
Rating  
Symbol  
VDRM  
ITSM  
IGM  
Value  
Unit  
V
Repetative peak Off-State Voltage  
Peak On-State Current for 50 ns (max)  
Peak Gate Current  
100  
100  
A
250  
mA  
V
Reverse Gate Voltage  
VGR  
5
Storage Temperature Range  
Operating Temperature Range  
T s  
-50 to 150  
0 to 125  
ºC  
ºC  
T J  
THERMAL CHARACTERISTICS  
(UNLESS OTHERWISE SPECIFIED)  
Thermal Resistance  
MECHANICAL & PACKAGING  
Junction-to-Case (Anode Bottom)  
Junction-to-Ambient (1)  
RθJC  
RθJA  
4.0  
65  
ºC/Watt  
ºC/Watt  
• CASE: Void-free transfer molded  
thermosetting epoxy compound  
meeting UL94V-0  
(1)When mounted on 0.06’ thick FR4 board with 2 oz copper FR4 board with recommended footprint  
• FINISH: Annealed matte-Tin plating  
over copper and readily solderable per  
MIL-STD-750 method 2026 (consult  
factory for Tin-Lead plating)  
• POLARITY: See figure (left)  
• MARKING: 301A•  
• WEIGHT: 0.072 gram (approx.)  
• Package dimensions on last page  
• Tape & Reel option: 16 mm tape per  
Standard EIA-481-B, 5000 on 13” reel  
Small foot print  
.190 X .270 inches  
1:1 Actual size  
See mounting pad details on pg 3  
Copyright © 2005  
7-17-05, Rev D  
Microsemi  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale Arizona 85252, 480-941-6300, Fax: 480-947-1503  
UPGA301Ae3  
Nanosecond SCR SWITCH  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL PARAMETERS@25°C (unless otherwise specified)  
Parameter  
Symbol Conditions  
Min. Typ. Max. Units  
` On characteristics (up to 100 A w/ 100 ns pulse @ Duty Cycle = 0.0001% or less)  
IDRM  
VT  
VGT  
IGT  
IGR  
Forward Blocking Current  
On - State Voltage  
Gate Trigger Voltage  
Gate Trigger Current  
Reverse Gate Current  
Holding Current  
Reverse Current (Note 1)  
` Switching characteristics (Tc = 25 °C)  
Delay Time  
1.0  
1.5  
0.75  
200  
0.1  
5.0  
10  
VDRM = 100 V, RGK = 1 kΩ  
IT = 1 A, Ig =10 mA  
VD = 5 V, RGS = 100 Ω  
VD = 5 V, RGS = 10 kΩ  
VGR = 5 V  
VD = 5 V, RGK = 1 kΩ  
VRRM = 30 V, RGK = 1 kΩ  
μA  
V
V
μA  
mA  
mA  
mA  
1.1  
0.5  
10  
0.01  
3.0  
1
IH  
IRRM  
1.0  
td  
tr  
Ig = 20 mA, IT = 1 A  
VD = 60 V, IT =1 A, Ig =10 mA  
dc < 1%  
20  
30  
25  
ns  
ns  
Rise Time  
15  
Circuit Commutated Turn—off  
Time  
Gate Trigger—on Pulse Width  
IT = 1.0 A , IR = 1.0 A max,  
RGK = 1 kΩ  
Ig = 10 mA, IT = 1 A  
tq  
0.3  
20  
0.5  
50  
μs  
tpg(on)  
ns  
Critical Rate of Rise  
Off –State Voltage  
dv/dt  
VD = 30 V, RGK = 1 kΩ  
15  
30  
V/μs  
Note 1: Pulse Test intended to guarantee reverse anode voltage capability for pulse commutation. The device should not be  
operated in the reverse blocking mode on a continuous basic  
Copyright © 2005  
7-17-05, Rev D  
Microsemi  
Page 2  
8700 E. Thomas Rd. PO Box 1390, Scottsdale Arizona 85252, 480-941-6300, Fax: 480-947-1503  
UPGA301Ae3  
Nanosecond SCR SWITCH  
S C O T T S D A L E D I V I S I O N  
Case: Molded Epoxy  
Meets UL94V-O at 1/8 inch  
Weight: 72 milligrams  
Lead and Mounting Temperature: 260°C max for 10 seconds  
NOTE: All dimensions are in inches.  
Copyright © 2005  
7-17-05, Rev D  
Microsemi  
Page 3  
8700 E. Thomas Rd. PO Box 1390, Scottsdale Arizona 85252, 480-941-6300, Fax: 480-947-1503  
UPGA301Ae3  
Nanosecond SCR SWITCH  
S C O T T S D A L E D I V I S I O N  
NOTES:  
Copyright © 2005  
7-17-05, Rev D  
Microsemi  
Page 4  
8700 E. Thomas Rd. PO Box 1390, Scottsdale Arizona 85252, 480-941-6300, Fax: 480-947-1503  

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