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USB50405CE3-TR [MICROSEMI]

Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon,;
USB50405CE3-TR
型号： USB50405CE3-TR
厂家： Microsemi    Microsemi
描述：

Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon,

瞬态抑制器 二极管 电视 光电二极管 局域网
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USB50403C thru USB50424C, e3  
Bidirectional TVSarray ™  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) is packaged in an SOT-143  
configuration giving protection to 1 Bidirectional data or interface line. It is designed  
for use in applications where protection is required at the board level from voltage  
transients caused by electrostatic discharge (ESD) as defined in IEC 61000–4-2,  
electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.  
It is also available with either Tin-Lead plated terminations or as RoHS Compliant  
with annealed matte-Tin finish by adding an “e3” suffix to the part number*.  
These TVS arrays have a peak power rating of 500 watts for an 8/20 μsec pulse.  
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS  
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS  
(USB) and I/O transceivers. The USB504xxC product provides board level  
protection from static electricity and other induced voltage surges that can damage  
or upset sensitive circuitry.  
SOT–143  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
•
Protects 1 bidirectional line  
•
•
•
•
•
EIA-RS485 data rates:  
5 Mbs  
10 Base T Ethernet  
Surge protection per IEC 61000-4-2, IEC 61000-4-4  
Provides electrically isolated protection  
UL 94V-0 Flamability Classification  
RoHS Compliant devices available by adding e3 suffix  
ULTRA LOW CAPACITANCE 3 pF per line pair  
ULTRA LOW LEAKAGE  
USB date rate: 900 Mbs  
Tape & Reel per EIA Standard 481-1-A  
7 inch reel; 3,000 pieces per reel  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)  
Pulse Repetition Rate: < .01%  
•
•
•
•
Molded SOT-143 Surface Mount  
Weight: 0.035 grams (approximate)  
Body marked with device marking code* (see below)  
Pin #1 defined by dot on top of package  
ELECTRICAL CHARACTERISTICS  
STAND OFF  
VOLTAGE  
VWM  
BREAKDOWN  
VOLTAGE  
VBR  
CLAMPING  
VOLTAGE  
VC  
@ 1 Amp  
(Figure 2)  
VOLTS  
CLAMPING  
VOLTAGE  
VC  
@ 5 Amp  
(Figure 2)  
VOLTS  
STANDBY  
CURRENT  
ID  
CAPACITANCE  
(f=1 MHz)  
C
TEMPERATURE  
COEFFICIENT  
OF VBR  
DEVICE  
MARKING*  
PART  
NUMBER  
@1 mA  
@ VWM  
@0V  
αVBR  
VOLTS  
MAX  
3.3  
VOLTS  
MIN  
4
µA  
MAX  
200  
40  
1
pF  
MAX  
3
mV/°C  
MAX  
-5  
MAX  
8
MAX  
11  
USB50403C  
USB50405C  
USB50412C  
USB50415C  
USB50424C  
53  
55  
5.0  
6.0  
10.8  
19  
13  
3
3
1
512  
515  
524  
12.0  
15.0  
24.0  
13.3  
16.7  
26.7  
26  
8
24  
32  
1
3
3
11  
43  
57  
1
28  
*Device marking has an e3 suffix added for the RoHS Compliant option, e.g. 53e3, 55e3, 512e3, 515e3, and 524e3.  
Copyright © 2005  
6-28-2005 REV K  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
USB50403C thru USB50424C, e3  
Bidirectional TVSarray ™  
S C O T T S D A L E D I V I S I O N  
SYMBOLS & DEFINITIONS  
Symbol  
VWM  
Definition  
Stand Off Voltage: Maximum dc voltage that can be applied over the operating temperature range.  
Vwm must be selected to be equal or be greater than the operating voltage of the line to be protected.  
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current  
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a  
pulse time of 20 µs.  
VBR  
VC  
ID  
C
Standby Current: Leakage current at VWM.  
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.  
GRAPHS  
8/20µs 500W Pulse  
Figure 1  
Peak Pulse Power Vs Pulse Time t = µsec  
Figure 2  
Pulse Wave Form  
OUTLINE AND SCHEMATIC  
INCHES  
MILLIMETERS  
MIN MAX  
DIM  
MIN  
MAX  
0.080  
0.053  
0.033  
0.018  
0.113  
0.045  
0.079  
0.008  
0.009  
0.023  
0.093  
A
B
C
C1  
D
E
F
G
H
I
0.070  
0.047  
0.027  
0.012  
0.107  
0.042  
0.067  
0.002  
0.003  
0.018  
0.083  
1.78  
1.20  
0.69  
0.30  
2.72  
1.07  
1.70  
0.051  
0.076  
0.46  
2.11  
2.03  
1.40  
0.84  
0.46  
2.87  
1.14  
2.01  
0.20  
0.23  
0.58  
2.36  
PAD LAYOUT  
SCHEMATIC  
J
OUTLINE  
Copyright © 2005  
6-28-2005 REV K  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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