USB50815C/TR13 [MICROSEMI]
TVS DIODE 15VWM 32VC 8SOIC;
| 型号： | USB50815C/TR13 |
| 厂家： | 
Microsemi |
| 描述： | TVS DIODE 15VWM 32VC 8SOIC 电视 |
| 文件： | 总2页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
USB50803C thru USB50824C
Bidirectional Low Capacitance TVSarray ™
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration
giving protection to 2 Bidirectional data or interface lines. It is designed for use in
applications where very low capacitance protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-
2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.
Using the schematic on the second page, pins 1 & 2 are tied together for the first
protected line, and pins 7 & 8 are tied together to the ground. The same would then
occur for a second protected line where pins 3 & 4 are tied together and pins 5 & 6 are
tied together to the ground. These may also be switched in polarity connections since
the electrical features are the same in each antiparallel (opposite facing) leg when the
pins are tied together in this manner for bidirectional protection.
SO–8
These TVS arrays have a peak power rating of 500 watts for an 8/20 µsec pulse.
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors, UNIVERSAL SERIAL BUS
(USB) and I/O transceivers. The USB508XXC product provides board level protection
from static electricity and other induced voltage surges that can damage or upset
sensitive circuitry.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
•
•
Protects up to 2 bidirectional lines
•
EIA-RS485 data rates:
5 Mbs
Surge protection per IEC 61000-4-2, IEC 61000-4-4
Provides electrically isolated protection
UL 94V-0 Flamability Classification
•
•
•
•
•
10 Base T Ethernet
USB date rate: 900 Mbs
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Carrier tubes; 95 pcs (STANDARD)
ULTRA LOW CAPACITANCE 3 pF per line pair
ULTRA LOW LEAKAGE
•
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
•
•
•
•
Molded SO-8 Surface Mount
Weight 0.066 grams (approximate)
Marking: Logo, device marking code, date code
Pin #1 defined by dot on top of package
ELECTRICAL CHARACTERISTICS
BREAKDOWN
CLAMPING
VOLTAGE
VC
CLAMPING
VOLTAGE
VC
STANDBY
CURRENT
ID
CAPACITANCE
TEMPERATURE
COEFFICIENT
OF VBR
STANDOFF
VOLTAGE
VWM
VOLTAGE
VBR
(f=1 MHz)
C
PART
DEVICE
@1 mA
@ 1 Amp
(Figure 2)
VOLTS
@ 5 Amp
(Figure 2)
VOLTS
@ VWM
@0V
αVBR
NUMBER
MARKING
VOLTS
VOLTS
MIN
4
µA
MAX
200
40
1
pF
MAX
3
mV/°C
MAX
-5
MAX
3.3
MAX
8
MAX
11
USB50803C
USB50805C
USB50812C
USB50815C
USB50824C
3C
5C
5.0
6.0
10.8
19
13
3
3
1
12C
15C
24C
12.0
15.0
24.0
13.3
16.7
26.7
26
8
24
32
1
3
3
11
43
57
1
28
Note:
Transient Voltage Suppressor (TVS) product is normally selected based on its stand off voltage VWM. Product
selected voltage should be equal to or greater than the continuous peak operating voltage of the circuit to be
protected.
Copyright 2003
Microsemi
Page 1
7-12-2004 REV F
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
USB50803C thru USB50824C
Bidirectional Low Capacitance TVSarray ™
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Definition
Symbol
VWM
Standoff Voltage: Maximum dc voltage that can be applied over the operating temperature range.
VWM must be selected to be equal or be greater than the operating voltage of the line to be protected.
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current
Clamping Voltage: Maximum clamping voltage across the TVS device when subjected to a given current at a
pulse time of 20 µs.
VBR
VC
ID
C
Standby Current: Leakage current at VWM.
Capacitance: Capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in picofarads.
GRAPHS
Figure 1
Peak Pulse Power Vs Pulse Time t = µsec
Figure 2
Pulse Wave Form
OUTLINE AND SCHEMATIC
INCHES
MILLIMETERS
DIM
PAD LAYOUT
MIN
MAX
0.197
0.158
0.069
0.021
0.050
MIN
MAX
A
B
C
D
F
0.188
0.150
0.053
0.011
0.0160
4.77
3.81
1.35
0.28
0.41
5.00
4.01
1.75
0.53
1.27
G
J
0.050 BSC
1.27 BSC
0.006
0.004
0.189
0.228
0.010
0.008
0.206
0.244
0.15
0.10
4.80
5.79
0.25
0.20
5.23
6.19
K
L
P
OUTLINE
SCHEMATIC
Copyright 2003
Microsemi
Page 2
7-12-2004 REV F
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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