USB6B1-TR [MICROSEMI]
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| 型号： | USB6B1-TR |
| 厂家： | 
Microsemi |
| 描述： | 暂无描述 二极管 电视 测试 光电二极管 PC 局域网 |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8700 E. Thomas Road
Scottsdale, AZ 85252
Tel: (480) 941-6300
Fax: (480) 947-1503
USB6B1
TVSarrayÔ Series
DESCRIPTION (500 watt)
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged
in a SO-8 configuration giving protection to one pair of Bidirectional
data lines and the Vbus. It is designed for use in applications where
protection is required at the board level from voltage transients caused
by electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical
fast transients (EFT) per IEC 1000-4-4 and effects of secondary
lighting.
These TVS arrays have a peak power rating of 500 watts for an
8/20msec pulse. This array is designed for protection of sensitive
circuitry consisting of UNIVERSAL SERIAL BUS (USB) I/O transceivers.
The capacitance between the I/O data lines are minimal too ensure no significant signal distortion or loss at
the 12 Megabit or greater data rate. This feature allows full compatibility with USB port standards.
MECHANICAL
FEATURES
·
·
·
·
·
·
Molded SO-8 Packaging
·
500 watt Peak Pulse Power protection at 8/20 µsec
Lead solder temperature (10 sec duration) 260ºC
Weight: 0.066 grams (approximate)
Marked with logo and marking code
Pin 1 indicated by dot on top of package
Encapsulation meets UL 94V-0
threat.
·
Protects each data line and between Vbus supply and
ground
·
·
·
·
·
·
Complies with MIL STD 883C Method 3015.7 class 3
Protection Per IEC 1000-4-2, IEC 1000-4-4
Provides electrically isolated protection
ULTRA LOW CAPACITANCE 5 pF line to ground
ULTRA LOW CAPACITANCE 3.5 pF line to line
ULTRA LOW STANDBY CURRENT
PACKAGING
·
·
·
Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500, pieces (OPTIONAL)
Carrier tubes 95 pcs per (STANDARD)
MAXIMUM RATINGS
·
·
·
Operating Temperatures: -550C to +1500C
Storage Temperature: -550C to +1500C
Peak Pulse Power: 500 Watts (8/20 msec, Figure 1
and 2)
·
Pulse Repetition Rate: <.01%
ELECTRICAL CHARACTERISTICS PER LINE @ 250C Unless otherwise specified
STAND
BREAKDOWN
VOLTAGE
VBR
CLAMPING
VOLTAGE
VC
@ 1 Amp
(FIGURE 2)
VOLTS
CLAMPING
VOLTAGE
VC
@ 5 Amp
(FIGURE 2)
VOLTS
STANDBY
CURRENT
ID
CAPACITANCE
(f=1 MHz)
TEMPERATURE
COEFFICIENT
of VBR
OFF
VOLTAG
E
@0V
PART
DEVICE
@1 mA
@ VWM
C
Data + To Data -
pF
áV(BR)
VWM
NUMBER
MARKING
VOLTS
µA
mV/°C
VOLTS
MAX
5.0
MIN
6.0
MAX
9.8
MAX
18
MAX
5
TYP
15
MAX
3
USB6B1
USB6
MSC1068.PDF
ISO 9001 CERTIFIED
REV E 7/07/2000
USB6B1
WAVE FORMS
8/20 µs 500W Pulse
Td - Pulse Time - µsec
FIGURE 1
Peak Pulse Power Vs Pulse Time
FIGURE 2
Pulse Wave Form
MOUNTING PAD S0-8
CIRCUIT DIAGRAM
0.045±.005
.160±.005
0.245
MIN
.030±.005
.050 TYP
S0-8 PACKAGE
INCHES
MILLIMETERS
MIN
DIM
MIN
MAX
0.197
0.158
0.069
0.021
0.050
MAX
5.00
4.01
1.75
0.53
1.27
A
B
C
D
F
0.188
0.150
0.053
0.011
0.016
4.77
3.81
1.35
0.28
0.41
G
J
0.050 BSC
1.27 BSC
0.006
0.004
0.189
0.228
0.010
0.008
0.206
0.244
0.15
0.10
4.80
5.79
0.25
0.20
5.23
6.19
K
L
P
MSC1068.PDF
ISO 9001 CERTIFIED
REV E 7/07/2000
相关型号：
USB6B1E3
Trans Voltage Suppressor Diode, 500W, 5V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, SO-8
MICROSEMI
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