WED3DG6417V7D2I [MICROSEMI]
Synchronous DRAM Module, 16MX64, CMOS, DIMM-168;型号: | WED3DG6417V7D2I |
厂家: | Microsemi |
描述: | Synchronous DRAM Module, 16MX64, CMOS, DIMM-168 动态存储器 |
文件: | 总6页 (文件大小:117K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WED3DG6417V-D2
White Electronic Designs
128MB- 16Mx64 SDRAM UNBUFFERED
FEATURES
DESCRIPTION
n PC100 and PC133 compatible
n Burst Mode Operation
The WED3DG6417V is a 16Mx64 synchronous DRAM module
which consists of four 16Mx16 SDRAM components in TSOP- 11
package and one 2K EEPROM in an 8- pin TSSOP package for
Serial Presence Detect which are mounted on a 168 Pin DIMM
multilayer FR4 Substrate.
n Auto and Self Refresh capability
n LVTTL compatible inputs and outputs
n Serial Presence Detect with EEPROM
n Fully synchronous: All signals are registered on the positive
edge of the system clock
n Programmable Burst Lengths: 1, 2, 4, 8 or Full Page
n 3.3 volt 6 0.3v Power Supply
n 168- Pin DIMM JEDEC
PIN CONFIGURATIONS (FRONT SIDE/BACK SIDE)
PIN NAMES
Pin
1
Front
VSS
DQ0
DQ1
DQ2
DQ3
VDD
DQ4
DQ5
DQ6
DQ7
DQ8
VSS
DQ9
DQ10
DQ11
DQ12
DQ13
VDD
DQ14
DQ15
NC
Pin
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
Front
DQM1
CS0
DNU
VSS
A0
Pin
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Front
DQ18
DQ19
VDD
Pin
85
Back
VSS
Pin
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
Back
DQM5
CS1
RAS
VSS
A1
Pin
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Back
DQ50
DQ51
VDD
A0 A11
BA0-1
DQ0-63
CLK0,CLK2
CKE0
CS0,CS2
RAS
CAS
WE
DQM0-7
VDD
VSS
Address input (Multiplexed)
Select Bank
2
3
86
87
DQ32
DQ33
DQ34
DQ35
VCC
Data Input/Output
Clock input
4
5
6
DQ20
NC
NC
88
89
90
DQ52
NC
NC
Clock Enable input
Chip select Input
Row Address Strobe
ColumnAddress Strobe
Write Enable
DQM
Power Supply (3ꢀ3V)
Ground
A2
A3
7
8
A4
A6
NC
VSS
91
92
DQ36
DQ37
DQ38
DQ39
DQ40
VSS
DQ41
DQ42
DQ43
DQ44
DQ45
VDD
A5
A7
DNU
VSS
9
A8
DQ21
DQ22
DQ23
VSS
DQ24
DQ25
DQ26
DQ27
VDD
DQ28
DQ29
DQ30
DQ31
VSS
93
94
A9
BA0
A11
VDD
NC
DQ53
DQ54
DQ55
VSS
DQ56
DQ57
DQ58
DQ59
VDD
DQ60
DQ61
DQ62
DQ63
VSS
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A10/AP
BA1
VDD
VDD
CLK0
VSS
DNU
CS2
DQM2
DQM3
DNU
VDD
NC
95
96
97
SDA
SCL
DNU
NC
Serial data I/O
Serial clock
Do not use
98
99
NC
VSS
CKE0
NC
DQM6
DQM7
NC
100
101
102
103
104
105
106
107
108
109
110
111
112
No Connect
DQ46
DQ47
*CB4
*CB5
VSS
VDD
NC
NC
VSS
NC
NC
NC
NC
NC
CLK2
NC
***WP
**SDA
**SCL
VDD
NC
NC
NC
NC
NC
**SA0
**SA1
**SA2
VDD
NC
NC
** These pins should be NC in the system which
does not support SPDꢀ
VDD
WE
VSS
DQ16
DQ17
VDD
CAS
VSS
DQ48
DQ49
*** WP (write protect) option available on Pin 81,
see ordering information page 5
DQM0
DQM4
White Electronic Designs reserves the right to change product or specifications without notice
March 2003 Revꢀ 1
ECO #16151
1
White Electronic Designs Corporation (508) 485-4000 wwwꢀwhiteedcꢀcom
WED3DG6417V-D2
White Electronic Designs
FUNCTIONAL BLOCK DIAGRAM
E
U5
SERIAL
PD
EEPROM
White Electronic Designs Corporation Marlborough MA (508) 485-4000
2
WED3DG6417V-D2
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN, Vout
VDD, VDDQ
TSTG
Value
-1ꢀ0 ~ 4ꢀ6
-1ꢀ0 ~ 4ꢀ6
-55 ~ +150
4
Units
V
V
°C
W
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage Temperature
Power Dissipation
PD
Short Circuit Current
IOS
50
mA
Note: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceededꢀ
Functional operation should be restricted to recommended operating conditionꢀ
Exposure to higher than recommended voltage for extended periods of time could affect device reliabilityꢀ
RECOMMENDED DC OPERATING CONDITIONS
(Voltage Referenced to: VSS = 0V, TA = 0°C to +70°C)
Parameter
Supply Voltage
Symbol
VDD
VIH
Min
3ꢀ0
2ꢀ0
-0ꢀ3
2ꢀ4
Typ
3ꢀ3
Max
3ꢀ6
Unit
V
V
V
V
Note
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
3ꢀ0 VDDQ+0ꢀ3
1
2
VIL
0ꢀ8
0ꢀ4
10
VOH
VOL
ILI
IOH= -2mA
IOL= -2mA
3
V
µA
-10
Note: 1ꢀ VIH (max)= 5ꢀ6V ACꢀ The overshoot voltage duration is £ 3nsꢀ
2ꢀ VIL (min)= -2ꢀ0V ACꢀ The undershoot voltage duration is £ 3nsꢀ
3ꢀ Any input 0V £ VIN £ VDDQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State
outputsꢀ
CAPACITANCE
(TA = 23°C, f = 1MHz, VDD = 3.3V, VREF=1.4V 6200mV)
Parameter
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
Cout
Min
Max
25
25
25
13
15
10
25
12
Unit
pF
pF
pF
pF
pF
pF
pF
pF
Input Capacitance (A0-A12)
Input Capacitance (RAS,CAS,WE)
Input Capacitance (CKE0)
Input Capacitance (CLK0,CLK2)
Input Capacitance (CS0,CS2)
Input Capacitance (DQM0-DQM7)
Input Capacitance (BA0-BA1)
Data input/output capacitance (DQ0-DQ63)
-
-
-
-
-
-
-
-
3
White Electronic Designs Corporation (508) 485-4000 wwwꢀwhiteedcꢀcom
WED3DG6417V-D2
White Electronic Designs
OPERATING CURRENT CHARACTERISTICS
(VCC = 3.3V, TA = 0°C to +70°C)
Version
Parameter
Operating Current
(One bank active)
Symbol
ICC1
Conditions
Burst Length = 1
tRC ³ tRC(min)
133
520
100
440
Units Note
mA
1
IOL = 0mA
Precharge Standby Current
in Power Down Mode
ICC2P
ICC2PS
Icc2N
CKE £ VIL(max), tCC = 10ns
CKE & CLK £ VIL(max), tCC = ¥
CKE ³ VIH(min), CS ³ VIH(min), tcc = 10ns
Input signals are charged one time during 20
CKE ³VIH(min), CLK £ VIL(max), tcc = ¥
Input signals are stable
CKE ³ VIL(max), tCC = 10ns
CKE & CLK £ VIL(max), tcc = ¥
CKE ³ VIH(min), CS ³ VIH(min), tcc = 10ns
Input signals are changed one time during 20ns
CKE ³VIH(min), CLK £ VIL(max), tcc = ¥
input signals are stable
10
10
mA
Precharge Standby Current
in Non-Power Down Mode
80
Icc2NS
mA
mA
40
25
25
Active standby current in
power-down mode
ICC3P
ICC3PS
ICC3N
Active standby current in
non power-down mode
120
100
mA
mA
mA
ICC3NS
ICC4
Io = mA
Page burst
4 Banks activated
tCCD = 2CLK
tRC ³ tRC(min)
CKE £ 0ꢀ2V
Operating current (Burst mode)
600
880
520
760
1
2
Refresh current
Self refresh current
ICC5
ICC6
mA
mA
20
Notes: 1ꢀ Measured with outputs openꢀ
2ꢀ Refresh period is 64msꢀ
3ꢀ Unless otherwise noticed, input swing level is CMOS (VIH/VIL = VDDQ/VssQ)
White Electronic Designs Corporation Marlborough MA (508) 485-4000
4
WED3DG6417V-D2
White Electronic Designs
ORDERING INFORMATION
Part Number
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
Part Number
Speed
100MHz
133MHz
133MHz
CAS Latency
CL=2
WED3DG6417V10D2
WED3DG6417V7D2
WED3DG6417V75D2
WED3DG6317V10D2
WED3DG6317V7D2
WED3DG6317V75D2
CL=2
CL=3
CL=2
CL=3
Note: for industrial temperature product add an "I" to the end of the part numberꢀ
Example: WED3DG6417V7D2I
Note: Available with WP write protect on Pin 81
PACKAGE DIMENSIONS
1.100
ALL DIMENSIONS ARE IN INCHES
5
White Electronic Designs Corporation (508) 485-4000 wwwꢀwhiteedcꢀcom
WED3DG6417V-D2
White Electronic Designs
Document Title
WED3DG6417V-D2
Revision History
Rev level
Requested by
Description
Created
Add
Date
A
Paul Marien
Marien
December 6, 2001
BPaul
"Part
Number"
to
order
0
1
Paul Marien
Paul Marien
Change from advanced to final datasheet
Add PC100 and PC133 to features
August 13, 2002
March 24, 2003
In pin configuration replace all single * with NC
Corrections to pin names
Add note at bottom of page 1
Change phone number at bottom of page 1
Page 5 addtional order block for modules with WP
Add note for industrial part number information
White Electronic Designs Corporation Marlborough MA (508) 485-4000
6
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