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WMS512K8-17CLI

更新时间：2024-10-29 17:45:11
品牌：MICROSEMI
描述：Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32

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WMS512K8-17CLI 概述

Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 SRAM

WMS512K8-17CLI 规格参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：QFJ包装说明：BRAZED, CERAMIC, LCC-32
针数：32Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.06最长访问时间：17 ns
其他特性：BATTERY BACKUPJESD-30 代码：R-CQCC-N32
JESD-609代码：e4内存密度：4194304 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：32
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX8
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：QCCN
封装形状：RECTANGULAR封装形式：CHIP CARRIER
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：GOLD
端子形式：NO LEAD端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

WMS512K8-17CLI 数据手册

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WMS512K8-XXX  
512Kx8 MONOLITHIC SRAM, SMD 5962-95613  
FEATURES  
 Access Times 15, 17, 20, 25, 35, 45, 55ns  
• 32 pin, Rectangular Ceramic Leadless Chip Carrier  
(Package 601)  
 MIL-STD-883 Compliant Devices Available  
• Commercial, Industrial and Military Temperature Range  
• 5V Power Supply  
 Revolutionary, Center Power/Ground Pinout JEDEC  
Approved  
• 36 lead Ceramic SOJ (Package 100)  
• Low Power CMOS  
• 36 lead Ceramic Flat Pack (Package 226)  
• Low Power Data Retention for Battery Back-up Operation  
• TTL Compatible Inputs and Outputs  
 Evolutionary, Corner Power/Ground Pinout JEDEC  
Approved  
• 32 pin Ceramic DIP (Package 300)  
*This product is subject to change without notice.  
• 32 lead Ceramic SOJ (Package 101)  
• 32 lead Ceramic Thinpack™ Flat Pack (Package 321)  
REVOLUTIONARY PINOUT  
EVOLUTIONARY PINOUT  
32 DIP  
36 FLAT PACK  
36 CSOJ  
32 CSOJ (DE)  
32 CLCC  
32 FLAT PACK (FF)  
TOP VIEW  
TOP VIEW  
TOP VIEW  
A0  
A1  
A2  
A3  
A4  
CS#  
I/O0  
I/O1  
VCC  
VSS  
I/O2  
I/O3  
WE#  
A5  
1
2
3
4
5
6
7
8
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
32 VCC  
A18  
A16  
A14  
A12  
A7  
1
31 A15  
30 A17  
29 WE#  
28 A13  
27 A8  
A18  
A17  
A16  
A15  
OE#  
I/O7  
I/O6  
VSS  
VCC  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
NC  
2
4
3 2 1 32 31 30  
3
5
6
7
8
29  
28  
27  
26  
25  
24  
23  
22  
21  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
I/O0  
WE#  
A13  
A8  
4
5
A6  
6
26 A9  
7
A5  
A9  
25 A11  
24 OE#  
23 A10  
22 CS#  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
8
A4  
9
A11  
OE#  
A10  
CS#  
I/O7  
9
A3  
10  
11  
12  
13  
9
10  
11  
12  
13  
14  
15  
16  
A2  
10  
11  
12  
13  
14  
15  
16  
17  
18  
A1  
A0  
I/O0  
I/O1  
I/O2  
VSS  
14 15 16 17 18 19 20  
A6  
A7  
A8  
A9  
PIN DESCRIPTION  
A0-18  
I/O 0-7  
CS#  
Address Inputs  
Data Input/Output  
Chip Select  
OE#  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
WE#  
VCC  
GND  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
Absolute Maximum Ratings  
Truth Table  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
VCC+0.5  
150  
Unit  
°C  
°C  
V
CS#  
H
OE#  
X
WE#  
X
MODE  
Standby  
Read  
DATA I/O  
High Z  
POWER  
Standby  
Active  
Operating Temperature  
Storage Temperature Range  
Signal Voltage Range to GND  
Junction Temperature  
Supply Voltage Range (VCC)  
TSTG  
VG  
L
L
H
Data Out  
Data In  
High Z  
L
X
L
Write  
Active  
TJ  
°C  
V
L
H
H
Out Disable  
Acvive  
VCC  
-0.5  
7.0  
Recommended Operating Conditions  
Parameter  
Symbol  
VCC  
VIH  
Min  
4.5  
Max  
5.5  
Unit  
V
Supply Voltage  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil)  
2.2  
VCC + 0.3  
+0.8  
V
VIL  
-0.3  
-55  
V
TA  
+125  
°C  
Capacitance  
(TA = +25°C)  
Parameter  
Symbol  
Conditions  
Package  
Speed (ns)  
15 to 55  
15 to 55  
15 to 35  
45 to 55  
15 to 55  
15 to 35  
45 to 55  
Max  
20  
15  
12  
20  
20  
12  
20  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
pF  
32 pin CSOJ, DIP, Flat Pack Evolutionary  
32 pin CLCC  
Input capacitance  
CIN  
VIN = 0 V, f = 1.0 MHz  
36 pin CSOJ & Flat Pack Revolutionary  
32 pin CSOJ, DIP, Flat Pack Revolutionary  
36 pin CSOJ & Flat Pack Revolutionary  
Output capacitance  
COUT  
VOUT = 0 V, f = 1.0 MHz  
This parameter is guaranteed by design but not tested.  
DC Characteristics – CMOS Compatible  
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)  
Parameter  
Symbol  
Conditions  
Min  
Max  
10  
Unit  
μA  
μA  
mA  
mA  
V
Input Leakage Current  
Output Leakage Current  
Operating Supply Current*  
Standby Current  
ILI  
ILO  
ICC  
ISS  
VOL  
VCC = 5.5, VIN = GND to VCC  
CS# = VIH, OE# = VIH, VOUT = GND TO VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5,  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5  
10  
160  
0.45  
0.4  
Output Low Voltage  
IOL = 6mA for 17 - 35ns,  
IOL = 2.1mA for 45 - 55ns, VCC = 4.5  
Output High Voltage  
VOH  
IOH = -4.0mA for 17 - 35ns,  
2.4  
V
I
OH = 1.0mA for 45 - 55ns, VCC = 4.5  
Data retention characteristics for low power “l” version  
Parameter  
Symbol  
VDR  
Conditions  
CS#3 VCC -0.2V  
VCC = 3V  
Min  
2.0  
Max  
5.5  
7
Unit  
V
Data Retention Supply Voltage  
Low Power Data Retention  
Low Power Data Retention  
ICCDR1  
ICCDR2  
mA  
mA  
VCC = 2V  
2
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
AC Characteristics  
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)  
-15  
-17  
-20  
-25  
-35  
-45  
-55  
Parameter  
Symbol  
Unit  
Min Max Min Max Min Max Min Max Min Max Min Max Min Max  
15  
0
17  
0
20  
0
25  
0
35  
0
45  
0
55  
0
Read Cycle Time  
tRC  
tAA  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
15  
17  
20  
25  
35  
45  
55  
Address Access Time  
Output Hold from Address Change  
Chip Select Access Time  
tOH  
15  
8
17  
9
20  
10  
25  
12  
35  
25  
45  
25  
55  
25  
tACS  
tOE  
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
2
0
2
0
2
0
2
0
4
0
4
0
4
0
tCLZ1  
tOLZ1  
tCHZ1  
tOHZ1  
8
8
9
9
10  
10  
12  
12  
15  
15  
20  
20  
20  
20  
AC Characteristics  
(VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ 125°C)  
-17 -20 -25  
Min Max Min Max Min Max Min Max Min Max Min Max Min Max  
-15  
-35  
-45  
-55  
Parameter  
Symbol  
Unit  
Write Cycle Time  
tWC  
tCW  
tAW  
15  
13  
13  
8
17  
14  
14  
9
20  
14  
14  
10  
14  
2
25  
15  
15  
10  
15  
2
35  
25  
25  
20  
25  
2
45  
35  
35  
25  
35  
2
55  
50  
50  
25  
40  
2
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
tDW  
tWP  
tAS  
13  
2
14  
2
Address Setup Time  
Address Hold Time  
tAH  
0
0
0
0
0
5
5
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold Time  
tOW1  
tWHZ1  
tDH  
2
2
3
4
4
5
5
8
9
9
10  
15  
20  
25  
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
AC Test Circuit  
AC Test Conditions  
Parameter  
Typ  
Unit  
V
Input Pulse Levels  
Input Rise and Fall  
V
IL = 0, VIH = 3.0  
5
ns  
V
IOL  
Input and Output Reference Level  
Output Timing Reference Level  
NOTES:  
1.5  
1.5  
Current Source  
V
V
I
Z is programmable from -2V to +7V.  
OL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 .  
Z is typically the midpoint of VOH and VOL  
OL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
VZ ≈ 1.5V  
D.U.T.  
(Bipolar Supply)  
V
I
.
Ceff = 50 pF  
IOH  
Current Source  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
TIMING WAVEFORM – READ CYCLE  
tRC  
ADDRESS  
CS#  
tAA  
tRC  
ADDRESS  
DATA I/O  
tAA  
tACS  
tCLZ  
tCHZ  
tOH  
OE#  
PREVIOUS DATA VALID  
DATA VALID  
tOE  
tOLZ  
tOHZ  
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH)  
DATA I/O  
DATA VALID  
HIGH IMPEDANCE  
READ CYCLE 2 (WE# = VIH)  
WRITE CYCLE – WE# CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS#  
WE#  
tAS  
tWP  
tOW  
tDH  
tDW  
DATA VALID  
tWHZ  
DATA I/O  
WRITE CYCLE 1, WE# CONTROLLED  
WRITE CYCLE – CS# CONTROLLED  
tWC  
ADDRESS  
tAW  
tAS  
tAH  
tCW  
CS#  
tWP  
WE#  
tDW  
tDH  
DATA I/O  
DATA VALID  
WRITE CYCLE 2, CS# CONTROLLED  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
PACKAGE 100: 36 LEAD, CERAMIC SOJ  
4.7 (0.184) MAX  
23.37 (0.920) ± ±0.25 (0.010)  
0.89 (0.035)  
Radius TYP  
0.2 (0.008)  
± ±0.05 (0.002)  
11.23 (0.442)  
± ±0.30 (0.012)  
9.55 (0.376) ± ±0.25 (0.010)  
1.27 (0.050) ± ±0.25 (0.010)  
1.27 (0.050) TYP  
21.6 (0.850) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 101: 32 LEAD, CERAMIC SOJ  
21.1 (0.830) ± ±0.25 (0.010)  
3.96 (0.156) MAX  
0.89 (0.035)  
Radius TYP  
0.2 (0.008)  
± ±0.05 (0.002)  
11.23 (0.442)  
± ±0.30 (0.012)  
9.55 (0.376) ± ±0.25 (0.010)  
1.27 (0.050) ± ±0.25 (0.010)  
1.27 (0.050) TYP  
19.1 (0.750) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
PACKAGE 321: 32 PIN CERAMIC THINPACKTM FLATPACK  
0.838  
MAX  
0.567  
0.427  
0.559  
0.429  
0.118  
MAX  
0.020  
0.030  
0.008  
0.005  
0.050  
TYP  
0.016 ± ±±0.008  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK  
23.37 (0.920)  
± ±0.25 (0.010)  
2.72 (0.107)  
MAX  
12.95 (0.510)  
± ±0.13 (0.005)  
12.7 (0.500)  
± ±0.5 (0.020)  
5.1 (0.200)  
± ±0.25 (0.010)  
1.27 (0.050) TYP  
21.59 (0.850) TYP  
0.43 (0.017)  
0.127 (0.005)  
± ±0.05 (0.002)  
± ±0.05 (0.002)  
3.8 (0.150)  
TYP  
32.64 (1.285) TYP  
38.1 (1.50) ± ±0.4 (0.015)  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED  
42.8 (1.686) MAX  
5.13 (0.202) MAX  
3.2 (0.125) MIN  
0.25 (0.010)  
± 0.05 (0.002)  
0.99 (0.039)  
± 0.51 (0.020)  
15.25 (0.600)  
± 0.25 (0.010)  
2.5 (0.100)  
TYP  
1.27 (0.050)  
± 0.1 (0.005)  
0.46 (0.018)  
± 0.05 (0.002)  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED  
7.62 (0.300) TYP  
3.81  
(0.150) TYP  
5.08  
(0.200)  
TYP  
0.56 (0.022)  
0.71 (0.028)  
10.16  
(0.400)  
TYP  
PIN 1  
0.38 (0.015) x 45  
PIN 1 IDENTIFIER  
11.25 (0.443)  
14.15 (0.557)  
1.63 (0.064)  
2.54 (0.100)  
13.79 (0.543)  
14.15 (0.557)  
1.02 (0.040) x 45  
3 PLACES  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
ORDERING INFORMATION  
W M S 512K 8 X - XXX X X X  
MICROSEMI CORPORATION  
MONOLITHIC  
SRAM  
ORGANIZATION, 512K x 8  
IMPROVEMENT MARK:  
Blank = Standard  
L = Low Power Data Retention  
ACCESS TIME (ns)  
PACKAGE:  
C = 32 pin Ceramic 0.600” DIP (Package 300)  
CL = 32 pin Rectangular Ceramic Leadless Chip Carrier (Package 601)  
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary  
DJ = 36 Lead Ceramic SOJ (Package 100)  
F = 36 Lead Ceramic Flat Pack (Package 226)  
FF = 32 Lead Ceramic Thinpack™ Flat Pack (Package 321)  
DEVICE GRADE:  
Q = MIL-STD-883 Compliant  
M = Military Screened -55°C ≤ TA ≤ 125°C  
I = Industrial -40°C ≤ TA ≤85°C  
C = Commercial 0°C ≤ TA ≤ 70°C  
LEAD FINISH:  
Blank = Gold plated leads  
A = Solder dip leads  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
DEVICE TYPE  
SPEED  
55ns  
PACKAGE  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
SMD NO.  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
5962-95613 05HYX  
5962-95613 06HYX  
5962-95613 07HYX  
5962-95613 08HYX  
5962-95613 09HYX  
5962-95613 10HYX  
5962-95613 14HYX  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
36 lead SOJ (DJ)  
5962-95613 05HTX  
5962-95613 06HTX  
5962-95613 07HTX  
5962-95613 08HTX  
5962-95613 09HTX  
5962-95613 10HTX  
5962-95613 14HTX  
5962-95613 05HZX  
5962-95613 06HZX  
5962-95613 07HZX  
5962-95613 08HZX  
5962-95613 09HZX  
5962-95613 10HZX  
5962-95613 14HZX  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
5962-95613 05HXX  
5962-95613 06HXX  
5962-95613 07HXX  
5962-95613 08HXX  
5962-95613 09HXX  
5962-95613 10HXX  
5962-95613 14HXX  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
10  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  
WMS512K8-XXX  
Document Title  
512Kx8 MONOLITHIC SRAM, SMD 5962-95613  
Revision History  
Rev # History  
Release Date Status  
Rev 12  
Changes (Pg. 1-11)  
March 2011  
Final  
12.1 Change document layout from White Electronic Designs to Microsemi  
12.2 Add document Revision History page  
Rev 13  
Changes (Pg 2)  
April 2012  
Final  
13.1 Correct typo in Absolute Maximum Ratings – Signal Voltage Range to  
Ground Max from VCC-0.5 to VCC+0.5  
13.1 Correct typo in DC Characteristics – CMOS Compatible - Operating Supply  
Current Conditions from CS# = VIH to CS# = VIL  
Microsemi Corporation reserves the right to change products or specifications without notice.  
April 2012 © 2012 Microsemi Corporation. All rights reserved.  
Rev. 13  
11  
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp  
www.whiteedc.com  

WMS512K8-17CLI 相关器件

型号 制造商 描述 价格 文档
WMS512K8-17CLIA MICROSEMI Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格
WMS512K8-17CLIA WEDC Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格
WMS512K8-17CLM WEDC 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 获取价格
WMS512K8-17CLM MICROSEMI Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格
WMS512K8-17CLMA MICROSEMI Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格
WMS512K8-17CLMA WEDC Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格
WMS512K8-17CLQ WEDC 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 获取价格
WMS512K8-17CLQ MICROSEMI Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格
WMS512K8-17CLQA WEDC 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 获取价格
WMS512K8-17CLQA MICROSEMI Standard SRAM, 512KX8, 17ns, CMOS, CQCC32, BRAZED, CERAMIC, LCC-32 获取价格

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