WMS512K8L-70CIEA [MICROSEMI]
Standard SRAM, 512KX8, 70ns, CMOS, CDIP32, DIP-32;
| 型号： | WMS512K8L-70CIEA |
| 厂家： | 
Microsemi |
| 描述： | Standard SRAM, 512KX8, 70ns, CMOS, CDIP32, DIP-32 CD 静态存储器 |
| 文件： | 总7页 (文件大小：587K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS512K8-XXX
512Kx8, MONOLITHIC SRAM, SMD 5962-95613
FEATURES
Access Times 70, 85, 100, 120ns
MIL-STD-883 Compliant Devices Available
Evolutionary, Corner Power/Ground Pinout JEDEC Approved
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
Commercial, Industrial and Military Temperature Ranges
5V Power Supply
Low Power CMOS
Low Power Data Retention
TTL Compatible Inputs and Outputs
EVOLUTIONARY PINOUT
PIN DESCRIPTION
32 DIP
A0-18
Address Inputs
Data Input/Output
Chip Select
32 CSOJ (DE)
I/O0-7
CS#
TOP VIEW
OE#
WE#
VCC
Output Enable
Write Enable
+5.0V Power
Ground
GND
A18
A16
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
32 VCC
31 A15
30 A17
29 WE#
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
CS#
H
OE#
X
WE#
X
Mode
Standby
Read
Data I/O
High Z
Power
Standby
Active
Parameter
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
L
L
H
Data Out
Data In
High Z
TSTG
VG
L
X
L
Write
Active
L
H
H
Out Disable
Active
TJ
°C
V
VCC
-0.5
7.0
CAPACITANCE
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Condition
Max
12
Unit
Input capacitance
Output capacitance
CIN
VIN = 0V, f = 1.0MHz
VOUT = 0V, f = 1.0MHz
pF
pF
Parameter
Supply Voltage
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
COUT
12
This parameter is guaranteed by design but not tested.
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
2.2
VCC + 0.3
+0.8
V
VIL
-0.3
-55
V
TA
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Units
Parameter
Symbol
Conditions
Min
10
10
50
1
Max
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 2.1mA, VCC = 4.5
μA
μA
mA
mA
V
ICC
ISB
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
2.4
V
IOH = -1.0mA, VCC = 4.5
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Military
Typ
Parameter
Symbol
Conditions
Units
Min
Max
5.5
Data Retention Supply Voltage
Data Retention Current
VDR
CS# ≥ VCC -0.2V
2.0
V
100
400
μA
I
CCDR1
VCC = 3V
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION
Parameter
Data Retention Supply Voltage
Low Power Data Retention (L)
Symbol
Conditions
CS# ≥ VCC -0.2V
VCC = 2V
Min
Max
5.5
Units
V
VDR
2.0
ICCDR1
185
μA
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min
70
Max
70
Min
85
Max
85
Min
100
Max
100
Min
120
Max
120
Read Cycle Time
tRC
tAA
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Output Hold from Address Change
Chip Select Access Time
tOH
tACS
tOE
5
5
5
5
70
35
85
40
100
50
120
60
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
1
tCLZ
10
5
10
5
10
5
10
5
1
tOLZ
1
tCHZ
25
25
25
25
35
35
35
35
1
tOHZ
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Write Cycle
Symbol
-70
Min
70
60
60
30
50
0
-85
Min
85
75
75
30
50
0
-100
Min
100
80
80
40
60
0
-120
Min
120
100
100
40
Units
Max
Max
Max
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
60
Address Setup Time
0
Address Hold Time
tAH
5
5
5
5
1
Output Active from End of Write
Write Enable to Output in High Z
Data Hold from Write Time
1. This parameter is guaranteed by design but not tested.
tOW
5
5
5
5
1
tWHZ
25
25
35
35
tDH
0
0
0
0
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
VIL = 0, VIH = 3.0
Unit
V
Input Pulse Levels
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
IOL
V
Current Source
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
VZ » 1.5V
(Bipolar Supply)
D.U.T.
Ceff = 50 pf
IOH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
TIMING WAVEFORM – READ CYCLE
tRC
ADDRESS
CS#
tAA
tRC
tAA
ADDRESS
DATA I/O
tCHZ
tACS
tCLZ
tOH
OE#
PREVIOUS DATA VALID
DATA VALID
tOE
tOLZ
tOHZ
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH
)
DATA I/O
DATA VALID
HIGH IMPEDANCE
READ CYCLE 2 (WE# = V
IH
)
WRITE CYCLE – WE# CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS#
WE#
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE# CONTROLLED
WRITE CYCLE – CS# CONTROLLED
tWC
ADDRESS
CS#
tAW
tAH
tAS
tCW
tWP
WE#
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.23 (0.442)
0.30 (0.012)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.8 (1.686) MAX
5.13 (0.202) MAX
3.2 (0.125) MIN
0.25 (0.010)
0.05 (0.002)
0.99 (0.039)
0.51 (0.020)
15.25 (0.600)
0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
0.1 (0.005)
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
ORDERING INFORMATION
W M S 512K 8 L - XXX X X X X
MICROSEMI CORPORATION:
MONOLITHIC:
SRAM:
ORGANIZATION, 512K x 8:
IMPROVEMENT MARK:
L = Low Power Data Retention
ACCESS TIME (ns):
PACKAGE:
C
= 32 Pin Ceramic 0.600” DIP (Package 300)
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary
DEVICE GRADE:
M = Military Screened -55°C to +125°C
I = Industrial
-40°C to +85°C
C = Commercial 0°C to +70°C
SPECIAL PROCESSING:
E = Epitaxial Layer
LEAD FINISH:
Blank = Gold plated leads
A
= Solder dip leads
DEVICE TYPE
SPEED
120ns
100ns
85ns
PACKAGE
SMD NO.
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
512K x 8 SRAM Monolithic
32 pin DIP (C)
5962-95613 01HYX
5962-95613 02HYX
5962-95613 03HYX
5962-95613 04HYX
5962-95613 01HTX
5962-95613 02HTX
5962-95613 03HTX
5962-95613 04HTX
32 pin DIP (C)
32 pin DIP (C)
70ns
32 pin DIP (C)
120ns
100ns
85ns
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
32 lead SOJ Evol (DE)
70ns
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WMS512K8-XXX
Document Title
512Kx8, MONOLITHIC SRAM, SMD 5962-95613
Revision History
Rev # History
Release Date Status
Rev 5
Changes (Pg. 1-7)
February 2011
Final
5.1 Change document layout from White Electronic Designs to Microsemi
5.2 Add document Revision History page
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011 © 2011 Microsemi Corporation. All rights reserved.
Rev. 5
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
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