WS128K32-25G2LQA [MICROSEMI]
SRAM Module, 128KX32, 25ns, CMOS, CQFP68, 22.40 MM, 5.08 MM HEIGHT, CERAMIC, QFP-68;
| 型号： | WS128K32-25G2LQA |
| 厂家： | 
Microsemi |
| 描述： | SRAM Module, 128KX32, 25ns, CMOS, CQFP68, 22.40 MM, 5.08 MM HEIGHT, CERAMIC, QFP-68 静态存储器 |
| 文件： | 总9页 (文件大小：1203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WS128K32-XXX
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595
FEATURES
Access Times of 15, 17, 20, 25, 35, 45, 55ns
MIL-STD-883 Compliant Devices Available
Packaging
Low Power CMOS
TTL Compatible Inputs and Outputs
Built in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
(Package 400)
Weight:
WS128K32-XG2UX - 8 grams typical
WS128K32-XG2LX - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX1 - 20 grams typical
• 68 lead, 40mm CQFP (G4T)1, 3.56mm (0.140") (Package
502)
• 68 lead, 22.4mm CQFP (G2U), 3.56mm (0.140"),
(Package 510)
Devices are upgradeable to 512Kx32
• 68 lead, 22.4mm (0.880") square, CQFP (G2L), 5.08mm
(0.200") high, (Package 528)
Organized as 128Kx32; User Configurable as 256Kx16 or
This product is subject to change without notice.
512Kx8
Commercial, Industrial and Military Temperature Ranges
5 Volt Power Supply
FIGURE 1 – PIN CONFIGURATION FOR WS128K32N-XH1X
Top View
Pin Description
1
12
23
34
45
56
I/O0-31
A0-16
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
I/O8
I/O9
I/O10
A13
WE2#
CS2#
GND
I/O11
A10
I/O15
I/O24
I/O25
I/O26
A6
VCC
CS4#
WE4#
I/O27
A3
I/O31
I/O30
I/O29
I/O28
A0
WE1-4
#
CS1-4
OE#
VCC
#
I/O14
I/O13
I/O12
OE#
NC
Output Enable
Power Supply
Ground
GND
NC
Not Connected
A14
A7
Block Diagram
A15
A11
NC
A4
A1
WE#1 CS#1
WE#2 CS#2
WE#3 CS#3
WE#4 CS#4
128K x 8
A16
A12
WE1#
I/O7
A8
A5
A2
OE#
A0-16
NC
VCC
A9
WE3#
CS3#
GND
I/O19
I/O23
I/O22
I/O21
I/O20
128K x 8
128K x 8
128K x 8
I/O0
I/O1
I/O2
CS1#
NC
I/O6
I/O16
I/O17
I/O18
I/O5
8
8
8
8
I/O3
I/O4
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
11
22
33
44
55
66
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
FIGURE 2 – PIN CONFIGURATION FOR WS128K32-XG4TX1
Top View
Pin Description
I/O0-31
A0-16
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
WE1-4
#
CS1-4
OE#
VCC
#
9
8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
GND
NC
Not Connected
Block Diagram
I/O9
CS1#
CS2#
CS3#
CS4#
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
WE#
OE#
A0-16
128K X 8
128K X 8
128K X 8
128K X 8
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
8
8
8
8
I/O0 - 7
I/O8 - 15
I/O16 - 23
I/O24 - 31
Note 1: Package Not Recommended For New Design
FIGURE 3 – PIN CONFIGURATION FOR WS128K32-XG2UX AND WS128K32-XG2LX
Top View
Pin Description
I/O0-31
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
A0-16
WE1-4
#
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
60
CS1-4
OE#
VCC
#
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
Output Enable
Power Supply
Ground
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
GND
NC
Not Connected
Block Diagram
I/O9
WE#1 CS#1
WE#2 CS#2
WE#3 CS#3
WE#4 CS#4
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
OE#
A0-16
128K x 8
128K x 8
128K x 8
128K x 8
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
8
8
8
8
I/O 0-7
I/O 8-15
I/O 16-23
I/O 24-31
Note 1: Package Not Recommended For New Design
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
VCC+0.5
150
Unit
°C
°C
V
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TSTG
VG
TJ
°C
V
VCC
-0.5
7.0
CAPACITANCE
TA = +25°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
COE
CWE
Conditions
VIN = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
Max Unit
Parameter
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
OE# capacitance
WE1-4# capacitance
HIP (PGA) H1
50
pF
pF
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
2.2
VCC + 0.3
+0.8
V
20
50
20
20
20
50
VIL
-0.5
-55
V
CQFP G4T
TA
+125
°C
CQFP G2U/G2L
CS1-4# capacitance
Data# I/O capacitance
CCS
CI/O
CAD
VIN = 0V, f = 1.0 MHz
VI/O = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
pF
pF
pF
Address input capacitance
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
-15
-17
-20
-25
Units
Min
Max
10
Min
Max
10
Min
Max
10
Min
Max
10
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
μA
μA
mA
mA
V
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 8mA, VCC = 4.5
10
10
10
10
ICC
ISB
600
80
600
80
600
80
600
60
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
0.4
0.4
0.4
IOH = -4.0mA, VCC = 4.5
2.4
2.4
2.4
2.4
V
Parameter
Sym
Conditions
-35
-45
-55
Units
Min
Max
10
Min
Max
10
Min
Max
10
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
ILI
ILO
VCC = 5.5, VIN = GND to VCC
μA
μA
mA
mA
V
CS# = VIH, OE# = VIH, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5
IOL = 8mA, VCC = 4.5
10
10
10
ICC
ISB
600
60
600
60
600
60
Output Low Voltage
Output High Voltage
VOL
VOH
0.4
0.4
0.4
IOH = -4.0mA, VCC = 4.5
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS (For WS128K32L-XXX Only)
-55°C ≤ TA ≤ +125°C, -40°C ≤ TA ≤ +85°C
Characteristic
Sym
Conditions
Min
Typ
Max
Units
Data Retention Voltage
Data Retention Quiescent Current
VCC
ICCDR
VCC = 2.0V
CS ³ VCC -0.2V
2
-
-
1
-
2
V
mA
Chip Disable to Data Retention Time (1)
Operation Recovery Time (1)
TCDR
TR
VIN ³ VCC -0.2V
or VIN 0.2V
0
TRC
-
-
-
ns
ns
NOTE: Parameter guaranteed, but not tested.
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-15
-17
-20
-25
-35
-45
-55
Units
Read Cycle
Min Max
Min Max
Min Max
Min Max
Min Max
Min Max
Min Max
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tRC
tAA
15
15
0
15
10
3
17
17
0
17
10
3
20
20
0
20
12
3
25
25
0
25
15
3
35
35
0
35
20
3
45
45
0
45
25
3
55
55
0
55
30
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
tOH
tACS
tOE
1
tCLZ
1
tOLZ
tCHZ
tOHZ
0
0
0
0
0
0
0
1
12
12
12
12
12
12
12
12
15
15
20
20
20
20
1
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
-15
Min Max
-17
Min Max
-20
Min Max
-25
Min Max
-35
Min Max
-45
Min Max
-55
Min Max
Units
Write Cycle
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
15
14
14
10
14
0
17
14
15
10
14
0
20
15
15
12
15
0
25
20
20
15
20
0
35
25
25
20
25
0
45
30
30
25
30
0
55
45
45
25
45
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tAH
0
3
0
3
0
3
0
3
0
4
0
4
0
4
1
tOW
tWHZ
tDH
1
10
10
12
15
20
25
25
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
FIGURE. 4 – AC TEST CIRCUIT
AC Test Conditions
Parameter
Typ
Unit
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Notes:
VIL = 0, VIH = 3.0
V
ns
V
5
1.5
1.5
V
V
Z is programmable from -2V to +7V.
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
Z is typically the midpoint of VOH and VOL
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
V
.
I
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
FIGURE 5 – TIMING WAVEFORM - READ CYCLE
CS#
OE#
READ CYCLE 2, (CS# = OE# = VIL, WE# = VIH
)
READ CYCLE 2 (WE# = VIH
)
FIGURE 6 – WRITE CYCLE - WE# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
FIGURE 7 – WRITE CYCLE - CS# CONTROLLED
CS#
WE#
WRITE CYCLE 2, CS# CONTROLLED
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
4.60 (0.181)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1
Note 1: Package Not
Recommended
For New Design
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)
25.15 (0.990) 0.25 (0.010) ꢀAX
5.10 (0.200) ꢀAX
22.36 (0.880) 0.25 (0.010) ꢀAX
0.25 (0.010) 0.10 (0.002)
0.23 (0.009) REF
24.0 (0.946)
0.25 (0.010)
R 0.127
(0.005)
1.37 (0.054) ꢀIN
0.004
2O / 9O
1.01 (0.040)
0.13 (0.005)
1.27 (0.050) TYP
0.38 (0.015) 0.05 (0.002)
20.31 (0.800) REF
0.940" TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
ORDERING INFORMATION
W S 128K32 X - XXX X X X
White Electronic Designs Corporation
(Microsemi corporation)
SRAM
ORGANIZATION, 128Kx32
User configurable as 256Kx16 or 512Kx8
IMPROVEMENT MARK:
N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades
L = Low Power*
ACCESS TIME (ns)
PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400)
G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)
G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528)
G4T1 = 40 mm Low Profile CQFP (Package 502)
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened
I = Industrial
C = Commercial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
LEAD FINISH:
Blank = Gold plated leads
A
= Solder dip leads
Note 1: Package Not Recommended For New Designs
* Low Power Data Retention only available in G2U, G2L, PackageTypes
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
WS128K32-XXX
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
5962-93187 05H4X
5962-93187 06H4X
5962-93187 07H4X
5962-93187 08H4X
5962-93187 09H4X
5962-93187 10H4X
5962-93187 11H4X
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
5962-95595 05HYX1
5962-95595 06HYX1
5962-95595 07HYX1
5962-95595 08HYX1
5962-95595 09HYX1
5962-95595 10HYX1
5962-95595 11HYX1
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-95595 05HMX
5962-95595 06HMX
5962-95595 07HMX
5962-95595 08HMX
5962-95595 09HMX
5962-95595 10HMX
5962-95595 11HMX
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
5962-95595 05HAX
5962-95595 06HAX
5962-95595 07HAX
5962-95595 08HAX
5962-95595 09HAX
5962-95595 10HAX
5962-95595 11HAX
Note 1: Package Not Recommended For New Design
Microsemi Corporation reserves the right to change products or specifications without notice.
September 2010 © 2010 Microsemi Corporation. All rights reserved.
Rev. 18
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com
相关型号：
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SRAM Module, 512KX8, 25ns, CMOS, CQFP68, 22 X 22 MM, HERMETIC SEALED, CERAMIC, QFP-68
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