WSF2816-39HIMA_技术文档

WSF2816-39XX

128Kx16 SRAM / 512Kx16 NOR FLASH MODULE

 Built-in Decoupling Caps and Multiple Ground Pins for Low

FEATURES

 Access Times of 35ns (SRAM) and 90ns (FLASH)

Noise Operation

 Weight:

 Packaging

• WSF2816-39G2UX - 8 grams typical

• WSF2816-39H1X - 13 grams typical

• 66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic

HIP (Package 400)

• 68 lead, Hermetic CQFP (G2U), 22.4mm (0.880") square

(Package 510) 3.56mm (0.140") height. Designed to ﬁt

JEDEC 68 lead 0.990” CQFJ footprint (FIGURE 2)

FLASH MEMORY FEATURES

 100,000 Erase/Program Cycles Minimum

 Sector Architecture

 128Kx16 5V SRAM

• 8 equal size sectors of 64K bytes each

 512Kx16 5V NOR FLASH

• Any combination of sectors can be concurrently erased.

Also supports full chip erase

 Organized as 128Kx16 of SRAM and 512Kx16 of Flash

Memory with separate Data Buses

 5 Volt Programming

 Both blocks of memory are User Conﬁgurable as 256Kx8

 Low Power CMOS

 Embedded Erase and Program Algorithms

 Hardware Write Protection

 Commercial, Industrial and Military Temperature Ranges

 TTL Compatible Inputs and Outputs

Note: For Flash programming information and waveforms refer to Flash Programming 4M5

Application Note AN0037.

FIGURE1 – PIN CONFIGURATION

FOR WSF2816-39H1X

PIN DESCRIPTION

FD_0-15

SD_0-15

A_0-18

Flash Data Inputs/Outputs

SRAM Data Inputs/Outputs

Address Inputs

TOP VIEW

SWE_1-2

#

SRAM Write Enable

SRAM Chip Selects

Output Enable

1

12

23

34

45

56

SCS_1-2

#

SD8

SD9

SD10

A13

A14

A15

A16

A18

SD0

SD1

SD2

SWE2#

SCS2#

GND

SD11

A10

SD15

SD14

SD13

SD12

OE#

FD8

FD9

FD10

A6

V_CC

FCS2#

FWE2#

FD11

A3

FD15

FD14

FD13

FD12

A0

OE#

V_CC

Power Supply

GND

NC

Ground

Not Connected

FWE_1-2

#

Flash Write Enable

Flash Chip Select

FCS_1-2

#

A7

BLOCK DIAGRAM

A11

A17

NC

A4

A1

SWE1# SCS1# SWE2# SCS2# FWE1# FCS1# FWE2# FCS2#

A12

SWE1#

SD7

A8

A5

A2

OE#

A0-16

V_CC

A9

FWE1#

FCS1#

GND

FD3

FD7

FD6

FD5

FD4

128K x 8

SRAM

128K x 8

SRAM

512K x 8

FLASH

512K x 8

FLASH

SCS1#

NC

SD6

FD0

FD1

FD2

SD5

8

SD3

SD4

11

22

33

44

55

66

FD0-7

FD8-15

SD8-15

SD0-7

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

1

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

FIGURE 2 – PIN CONFIGURATION FOR

WSF2816-39G2UX

PIN DESCRIPTION

FD0-15

SD0-15

A0-18

Flash Data Inputs/Outputs

SRAM Data Inputs/Outputs

Address Inputs

SWE1-2#

SCS1-2#

OE#

SRAM Write Enable

SRAM Chip Selects

Output Enable

9

8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61

Top View

VCC

Power Supply

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

60

59

58

57

56

55

54

53

52

51

50

49

48

47

46

45

44

SD0

SD1

SD2

SD3

SD4

SD5

SD6

SD7

GND

SD8

FD0

FD1

FD2

FD3

FD4

FD5

FD6

FD7

GND

FD8

FD9

FD10

FD11

FD12

FD13

FD14

FD15

GND

Ground

NC

Not Connected

FWE1-2#

FCS1-2#

Flash Write Enable

Flash Chip Select

SD9

SD10

SD11

SD12

SD13

SD14

SD15

BLOCK DIAGRAM

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

SWE1# SCS1# SWE2# SCS2# FWE1# FCS1# FWE2# FCS2#

OE#

A0-16

128K x 8

SRAM

128K x 8

SRAM

512K x 8

FLASH

512K x 8

FLASH

8

FD0-7

FD8-15

SD8-15

SD0-7

The Microsemi 68 lead G2U CQFP ﬁlls the same ﬁt and function as the

JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE and lead

inspection advantage of the CQFP form.

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

2

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

ABSOLUTE MAXIMUM RATINGS

SRAM TRUTH TABLE

Parameter

Symbol

T_A

Min

-55

Max

+125

+150

7.0

Unit

°C

V

SCS#

OE#

X

SWE#

Mode

Standby

Read

Data I/O

High Z

Power

Standby

Active

Operating Temperature (Mil.)

Storage Temperature

Signal Voltage Relative to GND

Supply Voltage

H

L

X

H

L

T_STG

V_G

-65

L

Data Out

High Z

-0.5

H

Read

Active

V_CC

7.0

V

X

Write

Data In

Active

NOTE: Auto select mode that require high voltage (V_ID) is not available. Flash and SRAM

share same address bus and would damage SRAM inputs.

Parameter

CAPACITANCE

Flash Data Retention

20 years

T_A= +25°C

Flash Endurance (write/erase cycles)

100,000 min

NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the

device. Extended operation at the maximum levels may degrade performance and

affect reliability.

Test

Symbol

C_OE

Condition

Max Unit

OE# Capacitance

WE# Capacitance

CS# Capacitance

V_IN= 0V, f = 1.0MHz

50

20

50

pF

C_WE

C_CS

Data I/O Capacitance

C_I/O

Address Line Capacitance

C_AD

RECOMMENDED OPERATING CONDITIONS

This parameter is guaranteed by design but not tested.

Parameter

Symbol

V_CC

Min

4.5

2.2

-0.5

-55

-40

0

Max

5.5

Unit

V

Supply Voltage

Input High Voltage

Input Low Voltage

Operating Temp. (Mil., Q)

Operating Temp. (Ind.)

Operating Temp. (Com.)

V_IH

V_CC+ 0.3

+0.8

V

V_IL

V

TA

+125

°C

T^A

+85

+70

DC CHARACTERISTICS – CMOS COMPATIBLE

Parameter

Symbol

I_LI

Conditions

V_CC= V_{CC MAX}, V_IN= GND to V_CC

Min

Max

10

Unit

Input Leakage Current

Output Leakage Current

μA

mA

V

I_LO

SCS# = FCS# = V_IH, OE# = V_IH, V_OUT= GND to V_CC

FCS# = V_IL, OE# = FCS# = V_IH, f = 5MHz, V_CC= V_{CC MAX}

FCS# = SCS# = V_CC± 0.5V, OE# = V_IH, f = 5MHz, V_CC= V_{CC MAX}

I_OL= 8.0mA, V_CC= V_{CC MIN}

10

SRAM Operating Supply Current x 16 Mode

Standby Current

I_CCx16

I_SB

325

20

SRAM Output Low Voltage

V_OL

0.4

SRAM Output High Voltage

Flash V_CCActive Current for Read (1, 2)

Flash V_CCActive Current for Program or Erase (2, 3)

Flash Output Low Voltage

V_OH

I_CC1

I_CC2

V_OL

I_OH= -4.0mA, V_CC= V_{CC MIN}

2.4

V

FCS# = V_IL, OE# = SCS# = V_IH

120

140

0.45

mA

V

FCS# = V_IL, OE# = SCS# = V_IH

I_OL= 8.0mA, V_CC= V_{CC MIN}

Flash Output High Voltage

V_OH1

V_OH2

V_LKO

I_OH= -2.5 mA, V_CC= V_{CC MIN}

0.85 x V_CC

V_CC-0.4

3.2

V

Flash Output High Voltage

I_OH= -100 μA, V_CC= V_{CC MIN}

V

Flash Low V_CCLock Out Voltage

4.2

V

NOTES:

1. The I_CCcurrent listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).

The frequency component typically is less than 4mA/MHz, with OE# at V_IH

2. Maximum current speciﬁcations are tested with V_CC= V_{CC MAX}

3. I_CCactive while Embedded Algorithm (program or erase) is in progress.

.

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

3

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

SRAM AC CHARACTERISTICS

Parameter

-35

Parameter

-35

Symbol

Unit

Symbol

Unit

Min

Max

Min

35

25

20

25

0

Max

Read Cycle

Write Cycle

Read Cycle Time

t_RC

t_AA

35

ns

Write Cycle Time

t_WC

t_CW

t_AW

ns

Address Access Time

35

Chip Select to End of Write

Address Valid to End of Write

Data Valid to End of Write

Write Pulse Width

Output Hold from Address Change

Chip Select Access Time

Output Enable to Output Valid

Chip Select to Output in Low Z

Output Enable to Output in Low Z

Chip Disable to Output in High Z

Output Disable to Output in High Z

t_OH

t_ACS

t_OE

0

35

20

t_DW

t_WP

t_AS

1

t_CLZ

3

0

Address Setup Time

1

t_OLZ

Address Hold Time

t_AH

0

1

t_CHZ

20

Output Active from End of Write

Write Enable to Output in High Z

Data Hold from Write Time

t_OW1

t_WHZ1

t_DH

4

1

t_OHZ

20

0

1. This parameter is guaranteed by design but not tested.

FIGURE 3 – AC TEST CIRCUIT

AC TEST CONDITIONS

Parameter

Typ

Unit

Input Pulse Levels

Input Rise and Fall

V

_IL= 0, V_IH= 3.0

V

ns

V

I_OL

5

Current Source

Input and Output Reference Level

Output Timing Reference Level

1.5

V

Notes: V_Zis programmable from -2V to +7V.

I

_OL& I_OHprogrammable from 0 to 16mA.

Tester Impedance Z0 = 75Ω.

_Zis typically the midpoint of V_OHand V_OL

_OL& I_OHare adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

D.U.T.

C_eff= 50 pf

V_Z≈ 1.5V

(Bipolar Supply)

V

I

.

I_OH

Current Source

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

4

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

FIGURE 4 – SRAM TIMING WAVEFORM — READ CYCLE

t_RC

ADDRESS

t_AA

t_RC

SCS#

ADDRESS

DATA I/O

t_AA

t_CHZ

t_ACS

t_CLZ

t_OH

SOE#

PREVIOUS DATA VALID

DATA VALID

t_OE

t_OLZ

t_OHZ

READ CYCLE 1 (SCS# = OE# = V , SWE# = V

IL IH

)

DATA I/O

DATA VALID

HIGH IMPEDANCE

READ CYCLE 2 (SWE# = V

IH

)

FIGURE 5 – SRAM WRITE CYCLE — SWE# CONTROLLED

t_WC

ADDRESS

t_AW

t_AH

t_CW

SCS#

t_AS

t_WP

SWE#

t_OW

t_WHZ

t_DW

t_DH

DATA I/O

DATA VALID

WRITE CYCLE 1, SWE# CONTROLLED

FIGURE 6 – SRAM WRITE CYCLE — SCS# CONTROLLED

t_WC

ADDRESS

t_AW

t_AH

t_AS

t_CW

SCS#

t_WP

SWE#

t_DW

t_DH

DATA I/O

DATA VALID

WRITE CYCLE 2, SCS# CONTROLLED

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

5

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE# CONTROLLED

-90

Parameter

Symbol

Unit

Min

90

0

Max

Write Cycle Time

t_AVAV

t_ELWL

t_WLWH

t_AVWL

t_WC

t_CS

t_WP

t_AS

ns

Chip Select Setup Time

Write Enable Pulse Width

Address Setup Time

45

0

ns

Data Setup Time

t_DVWH

t_WHDX

t_WLAX

t_WHEH

t_WHWL

t_WHWH1

t_WHWH2

t_GHWL

t_DS

45

0

ns

Data Hold Time

t_DH

t_AH

t_CH

t_WPH

ns

Address Hold Time

45

0

ns

Chip Select Hold Time

Write Enable Pulse Width High

Duration of Byte Programming Operation (1)

Sector Erase Time (2)

ns

20

ns

300

15

μs

sec

μs

sec

ns

Read Recovery Time Before Write

0

V_CCSet-up Time

t_VCS

50

Chip Programming Time

Output Enable Setup Time

Output Enable Hold Time (1)

Chip Erase Time

11

64

t_OES

t_OEH

0

10

ns

sec

NOTES:

1. Typical value for t_WHWH1is 7μs.

2. Typical value for t_WHWH1is 1sec.

3. Typical value for Chip Erase Time is 8sec.

4. For Toggle and Data# Polling.

FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS

-90

Parameter

Symbol

Unit

Min

90

Max

Read Cycle Time

t_AVAV

t_AVQV

t_ELQV

t_GLQV

t_EHQZ

t_GHQZ

t_AXQX

t_RC

t_ACC

t_CE

t_OE

t_DF

ns

Address Access Time

90

35

20

Chip Select Access Time

OE# to Output Valid

Chip Select to Output High Z (1)

OE# High to Output High Z (1)

Output Hold from Address, CS# or OE# Change, whichever is ﬁrst

1. Guaranteed by design, not tested.

t_DF

t_OH

0

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

6

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FCS# CONTROLLED

-90

Parameter

Symbol

Unit

Min

90

0

Max

Write Cycle Time

t_AVAV

t_WLEL

t_ELEH

t_WC

t_WS

t_CP

ns

FWE# Setup Time

FCS# Pulse Width

45

0

ns

Address Setup Time

t_AVEL

t_AS

ns

Data Setup Time

t_DVEH

t_EHDX

t_ELAX

t_DS

45

0

ns

Data Hold Time

t_DH

t_AH

t_WH

t_CPH

ns

Address Hold Time

45

0

ns

FWE# Hold From FWE# High

FCS# Pulse Width High

Duration Of Byte Programming Operation (1)

Duration Of Erase Operation (2)

Read Recovery Before Write

Chip Programming Time

Chip Erase Time (3)

t_EHWH

t_EHEL

ns

20

ns

t_WHWH1

t_WHWH2

t_GHEL

300

15

μs

sec

ns

0

11

64

sec

NOTES:

1. Typical value for t_WHWH1is 7μs.

2. Typical value for t_WHWH1is 1sec.

3. Typical value for Chip Erase Time is 8sec.

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

7

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

PACKAGE 400 – 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)

27.3 (1.075) 0.25 (0.010) Sꢀ

PIN 1 IDENTIFIER

SꢀUARE PAD

ON BOTTOM

25.4 (1.0) TYP

4.60 (0.181)

MAX

3.81 (0.150)

0.13 (0.005)

0.76 (0.030) 0.13 (0.005)

15.24 (0.600) TYP

25.4 (1.0) TYP

2.54 (0.100)

TYP

1.27 (0.050) TYP DIA

0.46 (0.018) 0.05 (0.002) DIA

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

8

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

PACKAGE 510 – 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)

25.15 (0.990) 0.25 (0.010) Sꢀ

3.56 (0.140) MAX

22.36 (0.880) 0.25 (0.010) Sꢀ

0.254 (0.010)

+ 0.051 (0.002)

- 0.025 (0.001)

0.254 (0.010) TYP

R 0.127

24.0 (0.946)

(0.005)

0.53 (0.021)

0.18 (0.007)

0.25 (0.010)

MIN

1°/ 7°

1.01 (0.040)

0.13 (0.005)

DETAIL A

1.27 (0.050) TYP

0.38 (0.015)

0.05 (0.002)

SEE DETAIL “A”

20.32 (0.800) TYP

The Microsemi 68 lead G2U CQFP ﬁlls the same

ﬁt and function as the JEDEC 68 lead CQFJ or

68 PLCC. But the G2U has the TCE and lead

inspection advantage of the CQFP form.

24.0 (0.946) TYP

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

9

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

ORDERING INFORMATION

W S F 2816 - 39 X X X

MICROSEMI CORPORATION

SRAM

NOR FLASH

2Mbit of SRAM and 8Mbit of FLASH

Organization: 128K x 16 SRAM and

512K x 16 Flash

ACCESS TIME (ns)

39 = 35ns SRAM and 90ns FLASH

PACKAGE TYPE:

H1 = 1.075" sq. Ceramic Hex In-line Package, HIP (Package 400)

G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)

DEVICE GRADE:

M = Military Screened

I = Industrial

-55°C to +125°C

-40°C to +85°C

0°C to +70°C

C = Commercial

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

10

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WSF2816-39XX

Document Title

128Kx16 SRAM / 512Kx16 NOR FLASH MODULE

Revision History

Rev # History

Release Date Status

Rev 7

Changes (Pg. 1-16)

August 2011

Final

7.1 Change document layout from White Electronic Designs to Microsemi

7.2 Add document Revision History page

Rev 8

Changes (Pg. 1, 3, 4, 6, 7, 13)

May 2012

Final

8.1 Add NOR to doc title

8.2 Add 5V to 512Kx32 SRAM bullet

8.3 Add NOR to 512Kx32 5V Flash bullet

8.4 Add minimum to 100,000 Erase/Program Cycles bullet

8.5 Delete 5V ± 10% Supply from 5 Volt Programming bullet

8.6 Delete Junction Temperature row from Absolute Maximum Ratings chart

8.7 Add operating temp for Mil., Ind. and Com. to Recommended Operating

Conditions chart

8.9 Change V_CC= 5.5 to V_CC= V_{CC MAX}in I_LI, I_CCx16and I_SB; change SCS# to

FCS# in I_LO; change V_CC= 5.5 to V_CC= V_{CC MAX}in I_CCx16and I_SB; change V_IH

to V_CC± 0.5V in I_SB; change V_CC= 4.5 to V_CC= V_{CC MIN}in V_OL, V_OH, V_OH1and

V_OH2in the DC Characteristics chart

8.10 Delete waveforms diagrams from data sheet

8.11 Add NOR to Flash and add "27 = 25ns SRAM and 70ns FLASH" to Access

Time in Ordering Information chart

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

11

Microsemi Corporation • (602) 437-1520 • www.microsemi.com


型号：	WSF2816-39HIMA
厂家：	Microsemi
描述：	Memory Circuit, 512KX16, CMOS, CPGA66, HIP-66 静态存储器内存集成电路
文件：	总11页 (文件大小：980K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

WSF2816-39HIMA [MICROSEMI]

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