AS5C4008CW-35LE/XT [MICROSS]
Standard SRAM, 512KX8, 35ns, CMOS, CQCC32;
| 型号： | AS5C4008CW-35LE/XT |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Standard SRAM, 512KX8, 35ns, CMOS, CQCC32 静态存储器 内存集成电路 |
| 文件： | 总15页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SRAM
AS5C4008
Austin Semiconductor, Inc.
512K x 8 SRAM
PIN ASSIGNMENT
(Top View)
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
32-Pin DIP (CW), 32-Pin LCC (EC)
32-Pin SOJ (ECJ)
SPECIFICATION
• SMD 5962-95600
• MIL STD-883
1
2
A18
A16
A14
A12
A7
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
WE\
A13
A8
3
FEATURES
• High Speed: 17, 20, 25, 35 and 45ns
• High-performance, low power military grade device
• Single +5V ±10% power supply
• Easy memory expansion with CE\ and OE\ options
• All inputs and outputs are TTL-compatible
• Ease of upgradability from 1 Meg using the 32 pin
evolutionary version.
4
5
6
A6
7
A5
A9
8
A4
A11
OE\
A10
CE\
9
A3
10
11
12
13
14
15
16
A2
A1
A0
I/O7
I/O6
I/O5
I/O4
I/O3
I/O0
I/O1
I/O2
Vss
OPTIONS
• Timing
MARKING
15ns access (contact factory)
17ns access
20ns access
25ns access
35ns access
-15
-17
-20
-25
-35
-45
32-Pin Flat Pack (F)
Vcc
A15
A17
WE\
A13
A8
1
A18
A16
A14
A12
A7
32
2
31
45ns access
3
30
• Operating Temperature Range
Military: -55oC to +125oC
Industrial: -40oC to +85oC
• Packages
4
5
29
28
27
26
25
24
23
22
21
20
19
18
17
XT
IT
A6
6
A9
A5
7
A11
OE\
A10
CE\
A4
8
Ceramic Dip (600 mil)
Ceramic Flatpack
Ceramic LCC
CW
F
EC
No. 112
No. 304
No. 209
No. 502
No. 208
A3
9
A2
10
11
12
13
14
15
16
A1
I/O7
I/O6
I/O5
I/O4
I/O3
A0
Ceramic SOJ
Ceramic LCC (contact factory)
• Options
ECJ
ECA
I/O0
I/O1
I/O2
Vss
2V data retention/ low power
Radiation Tolerant (EPI)
L
E
32-Pin LCC (ECA)
NOTE: Not all combinations of operating temperature, speed, data retention and low
power are necessarily available. Please contact factory for availability of specific part
number combinations.
4
3
2
32 31 30
29
GENERAL DESCRIPTION
5
6
7
8
9
A7
A6
A5
WE\
A13
A8
1
The AS5C4008 is a 4 megabit monolithic CMOS SRAM,
organized as a 512K x 8.
28
27
26
25
24
23
22
21
The evolutionary 32 pin device allows for easy upgrades from
the 1 meg SRAM.
For flexibility in high-speed memory applications, ASI offers
chip enable (CE\) and output enable (OE\) capabilities. These
enhancements can place the outputs in High-Z for additional flexibil-
ity in system design.
A4
A9
A3
A11
OE\
A10
CE\
I/O 7
10
11
12
13
A2
A1
A0
I/O0
14 15 16 17 18 19 20
Writing to these devices is accomplished when write enable (WE\)
and CE\ inputs are both LOW. Reading is accomplished when WE\
remains HIGH and CE\ and OE\ go LOW. This allows systems
designers to meet low standby power requirements.
All devices operate from a single +5V power supply and all
inputs are fully TTL-Compatible.
For more products and information
please visit our web site at
www.austinsemiconductor.com
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
1
SRAM
AS5C4008
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
Vcc
GND
I/O7
2,097,152 Bit
Memory Array
A0:A18
I/O1
CE\
OE\
WE\
Column Decoder
Power
Down
TRUTH TABLE
MODE
STANDBY
READ
NOT SELECTED
WRITE
OE\ CE\ WE\
DQ
High-Z STANDBY
ACTIVE
High-Z ACTIVE
ACTIVE
POWER
X
L
H
L
L
L
X
H
H
L
Q
H
X
D
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
2
SRAM
AS5C4008
Austin Semiconductor, Inc.
*Stresses greater than those listed under "Absolute
ABSOLUTE MAXIMUM RATINGS*
Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional opera-
tion of the device at these or any other conditions above
those indicated in the operation section of this specifica-
tion is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
** Junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow.
Voltage on Vcc Supply Relative to Vss...................-.5V to +7.0V
Storage Temperature ............................................-65°C to +150°C
Short Circuit Output Current (per I/O)….............................20mA
Voltage on any Pin Relative to Vss......................-.5V to Vcc+1 V
Maximum Junction Temperature**....................................+150°C
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC<TA<125oC or -40oC to +85oC;Vcc = 5V +10%)
PARAMETER
CONDITION
SYMBOL
MIN
2.2
-0.5
-10
MAX
VCC +0.5
0.8
UNITS NOTES
VIH
VIL
ILI
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
V
V
1
1, 2
OV < VIN < Vcc
Output(s) disabled
OV < VOUT < Vcc
IOH = -4.0 mA
µΑ
10
ILO
Output Leakage Current
-10
10
µΑ
VOH
VOL
Vcc
Output High Voltage
Output Low Voltage
Supply Voltage
2.4
---
4.5
--
0.4
5.5
V
V
V
1
1
1
I
OL = 8.0 mA
MAX
PARAMETER
CONDITIONS
CE\ < VIL; Vcc = MAX
f = MAX = 1/tRC
SYM
-15
-17
-20
-25
-35
-45 UNITS NOTES
225
225
180
60
225
225
180
60
225
225
180
60
mA
mA
mA
mA
mA
mA
3
ICCSP
Power Supply Current:
Operating
Outputs Open
180
60
180
60
30
25
20
180
60
30
25
20
ICCLP
ISBTSP
ISBTLP
L Version Only
CE\ > VIH; Vcc = MAX
f = MAX = 1/tRC
Outputs Open
30
30
30
30
Power Supply Current:
Standby
L Version Only
CE\ < VCC -0.2V; Vcc = MAX
VIN < Vss +0.2V or
ISBCSP 25
20
25
25
25
VIN > Vcc -0.2V; f = 0
20
20
20
ISBCLP
L Version Only
CAPACITANCE
PARAMETER
CONDITIONS
TA = 25oC, f = 1MHz
SYMBOL
MAX
UNITS
NOTES
CI
Input Capacitance
12
14
pF
pF
4
VIN = 0
Output Capactiance
Co
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
3
SRAM
AS5C4008
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC<TA<125oC or -40oC to +85oC;Vcc = 5V +10%)
-15
-17
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
-20
-25
-35
-45
DESCRIPTION
SYM
UNITS NOTES
MIN
MAX
READ CYCLE
tRC
tAA
tACE
tOH
Read Cycle Time
15
17
20
25
35
45
ns
ns
ns
ns
Address Access Time
15
15
17
17
20
20
25
25
35
35
45
45
Chip Enable Access Time
Output Hold From Address Change
2
2
0
2
2
0
2
2
0
2
2
0
2
2
0
2
2
0
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
ns
ns
ns
ns
ns
4, 6, 7
4, 6, 7
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable Acess Time
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
WRITE CYCLE
7
8
8
8
8
10
12
15
15
20
25
10
0
0
0
0
0
0
0
0
0
0
0
0
4, 6, 7
4, 6, 7
7
8
8
10
15
20
tWC
tCW
tAW
WRITE Cycle Time
15
15
15
0
17
16
16
0
20
17
17
0
25
20
20
0
35
30
30
0
45
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to End of Write
Address Valid to End of Write
Address Setup Time
tAS
tAH
Address Hold From End of Write
WRITE Pulse Width
1
1
1
1
1
1
tWP
15
7
17
9
20
10
0
25
12
0
25
20
0
25
25
0
tDS
Data Setup Time
tDH
Data Hold Time
0
0
tLZWE
tHZWE
Write Disable to Output in Low-Z
Write Enable to Output in High-Z
0
0
0
0
0
0
4, 6, 7
4, 6, 7
0
7
0
8
0
8
0
10
0
25
0
30
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
4
SRAM
AS5C4008
Austin Semiconductor, Inc.
AC TEST CONDITIONS
Input pulse levels ................................................... Vss to 3.0V
Input rise and fall times ....................................................... 3ns
Input timing reference levels ............................................ 1.5V
Output reference levels ..................................................... 1.5V
Output load ............................................... See Figures 1 and 2
167 ohms
167 ohms
Q
Q
1.73V
1.73V
C=30pF
C=5pF
Fig. 1 Output Load Equivalent
Fig. 2 Output Load Equivalent
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. RC = Read Cycle Time.
12. Chip enable and write enable can initiate and
terminate a WRITE cycle.
13. Output enable (OE\) is inactive (HIGH).
14. Output enable (OE\) is active (LOW).
15. ASI does not warrant functionality nor reliability of any
product in which the junction temperature exceeds
150°C. Care should be taken to limit power to acceptable
levels.
NOTES
1. All voltages referenced to VSS (GND).
2. -2V for pulse width < 20ns
3. ICC is dependent on output loading and cycle rates.
4. This parameter is guaranteed but not tested.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE
are specified with CL = 5pF as in Fig. 2. Transition is
measured ±200mV from steady state voltage.
7. At any given temperature and voltage condition,
t
tHZCE is less thantLZCE, and HZWE is less than
tLZWE.
t
8. WE\ is HIGH for READ cycle.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
CE\ > (Vcc -0.2V)
VIN > (Vcc -0.2V) or < 0.2V
SYMBOL
MIN
MAX
UNITS NOTES
V
CC for Retention Data
VDR
2
V
Data Retention Current
(L Version Only)
V
CC = 2V
ICCDR
4.5
mA
Chip Deselect to Data
Retention Time
0
ns
4
t
CDR
Operation Recovery Time
10
ms
4, 11
t
R
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
5
SRAM
AS5C4008
Austin Semiconductor, Inc.
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE
VDR
4.5V
4.5V
Vcc
tCDR
tR
VIH
CE\
VDR
V
IL
READ CYCLE NO. 1 8, 9
(Write Enabled Controlled)
tRC
VALID
ADDRESS
DQ
tAA
tOH
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2 7, 8, 10
(Write Enabled Controlled)
tRC
CE\
tAOE
tHZOE
tLZOE
OE\
DQ
Icc
tLZCE
tACE
tHZCE
E
DATA VALID
tPU
tP
D
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
6
SRAM
AS5C4008
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
tWC
ADDRESS
tAW
t
AH
tAS
tCW
CE\
tW
P
WE\
tDS
tDH
DATA VAILD
D
Q
HIGH Z
12, 13
WRITE CYCLE NO. 2
(Write Enabled Controlled)
tWC
ADDRESS VALID
Address
tAW
tAH
tCW
CE\
WE\
D
tAS
tWP1
tDS
tDH
DATA VALID
t
LZWE
tHZWE
Q
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
7
SRAM
AS5C4008
Austin Semiconductor, Inc.
WRITE CYCLE NO. 37, 12, 14
(Write Enable Controlled)
tWC
ADDRESS
CE\
tAW
tAH
tCW
tAS
tWP2
WE\
tDH
tDS
D
Q
Data Valid
tHZWE
tLZWE
High-Z
Don’t Care
Undefined
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
8
SRAM
AS5C4008
Austin Semiconductor, Inc.
MECHANICAL DEFINITION*
ASI Case #112 (Package Designator CW)
SMD 5962-95600, Case Outline X
D
A
L
L1
b
e
Pin 1
b1
E
b2
E1
SMD Specifications
SYMBOL
MIN
---
0.014
0.045
0.008
---
MAX
0.225
0.026
0.065
0.018
1.680
0.620
A
b
b1
b2
D
E
0.510
e
0.100 BSC
0.600 BSC
E1
L1
L
0.125
0.015
0.200
0.070
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
9
SRAM
AS5C4008
Austin Semiconductor, Inc.
MECHANICAL DEFINITION*
ASI Case #304 (Package Designator F)
SMD 5962-95600, Case Outline 9
E
L
e
b
D
D1
Top View
A
c
Q
E2
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.114
0.019
0.008
0.838
0.758
0.460
0.427
A
b
c
D
D1
E
E2
e
0.096
0.008
0.003
0.816
0.742
0.419
0.345
0.050 BSC
L
Q
0.290
0.024
0.310
0.038
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
AS5C4008
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
Rev. 4.0 10/00
10
SRAM
AS5C4008
Austin Semiconductor, Inc.
MECHANICAL DEFINITION*
ASI Case #209 (Package Designator EC)
SMD 5962-95600, Case Outline Z
A
D1
D
L
R
e
b2
E
A1
SMD SPECIFICATIONS
SYMBOL
MIN
MAX
0.100
0.054
0.028
0.835
0.760
0.460
A
A1
b2
D
D1
E
0.080
0.006
0.022
0.815
0.740
0.440
e
L
R
0.050 BSC
0.100 REF
0.009 REF
NOTE: These dimensions are per the SMD. ASI's package dimensional limits
may differ, but they will be within the SMD limits.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
11
SRAM
AS5C4008
Austin Semiconductor, Inc.
MECHANICAL DEFINITION*
ASI Case #502 (Package Designator ECJ)
A
L
L2
TYP
e
D
A2
D1
E2
b
A1
E
ASI SPECIFICATIONS
MIN
SYMBOL
MAX
0.160
0.075
0.063
0.028
0.835
0.760
0.460
0.440
A
A1
A2
b
D
D1
E
0.115
0.054
0.025
0.015
0.815
0.740
0.418
0.371
E2
e
0.050 BSC
L
L2
0.050
0.115
0.070
0.135
NOTE: This package meets SMD 5962-95600, Case Outline U
dimensions in every aspect, except dimension E2.
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
12
SRAM
AS5C4008
Austin Semiconductor, Inc.
MECHANICAL DEFINITION*
ASI Case #208 (Package Designator ECA)
D1
L1
e
E1
D
L
R
E
B1
A
A1
SMD SPECIFICATIONS
MIN
SYMBOL
MAX
0.080
0.050
0.028
0.560
0.410
0.458
0.310
0.055
0.055
0.095
0.014
A
A1
B1
D
D1
E
E1
e
L
0.060
0.040
0.022
0.540
0.390
0.442
0.290
0.045
0.045
0.075
0.004
L1
R
*All measurements are in inches.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
13
SRAM
AS5C4008
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: AS5C4008CW-25L/883C
EXAMPLE: AS5C4008F-45LE/883C
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
ns
Type
ns
AS5C4008
AS5C4008
CW
CW
-15
-15
L
E
/*
/*
AS5C4008
AS5C4008
F
F
-15
-15
L
E
/*
/*
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
CW
CW
CW
CW
CW
CW
CW
CW
CW
CW
-17
-17
-20
-20
-25
-25
-35
-35
-45
-45
L
E
L
E
L
E
L
E
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
F
F
F
F
F
F
F
F
F
F
-17
-17
-20
-20
-25
-25
-35
-35
-45
-45
L
E
L
E
L
E
L
E
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
E
E
EXAMPLE: AS5C4008C-20E/883C
EXAMPLE: AS5C4008ECA-45/883C
Device
Number
Package Speed
Device
Number
Package Speed
Options** Process
Options** Process
Type
ns
Type
ns
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
AS5C4008
EC
EC
ECJ
ECJ
EC
-15
-15
-15
-15
-17
-17
-17
-17
-20
-20
-20
-20
-25
-25
-25
-25
-35
-35
-35
-35
-45
-45
-45
-45
L
E
L
E
L
E
L
E
L
E
L
E
L
E
L
E
L
E
L
E
L
E
L
E
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
AS5C4008
AS5C4008
ECA
ECA
-15
-15
L
E
/*
/*
EC
AS5C4008
AS5C4008
ECA
ECA
-17
-17
L
E
/*
/*
ECJ
ECJ
EC
EC
AS5C4008
AS5C4008
ECA
ECA
-20
-20
L
E
/*
/*
ECJ
ECJ
EC
EC
AS5C4008
AS5C4008
ECA
ECA
-25
-25
L
E
/*
/*
ECJ
ECJ
EC
EC
AS5C4008
AS5C4008
ECA
ECA
-35
-35
L
E
/*
/*
ECJ
ECJ
EC
EC
ECJ
ECJ
AS5C4008
AS5C4008
ECA
ECA
-45
-45
L
E
/*
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
883C = Full Military Processing
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
**DEFINITION OF OPTIONS
2V Data Retention/Low Power
Radiation Tolerant (EPI)
L
E
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
14
SRAM
AS5C4008
Austin Semiconductor, Inc.
ASI TO DSCC PART NUMBER
CROSS REFERENCE
Package Designator CW
Package Designator F
ASI Part #
SMD Part
ASI Part #
SMD Part#
AS5C4008CW-15/883C
AS5C4008CW-20/883C
AS5C4008CW-25/883C
AS5C4008CW-35/883C
AS5C4008CW-45/883C
5962-9560014MXA
5962-9560004MXA
5962-9560003MXA
5962-9560002MXA
5962-9560001MXA
AS5C4008F-15/883C
AS5C4008F-20/883C
AS5C4008F-25/883C
5962-9560014M9A
5962-9560004M9A
5962-9560003M9A
AS5C4008F-35/883C
AS5C4008F-45/883C
AS5C4008F-15L/883C
AS5C4008F-20L/883C
AS5C4008F-25L/883C
5962-9560002M9A
5962-9560001M9A
5962-9560013M9A
5962-9560008M9A
5962-9560007M9A
AS5C4008CW-15L/883C
AS5C4008CW-20L/883C
AS5C4008CW-25L/883C
AS5C4008CW-35L/883C
AS5C4008CW-45L/883C
5962-9560013MXA
5962-9560008MXA
5962-9560007MXA
5962-9560006MXA
5962-9560005MXA
AS5C4008F-35L/883C
AS5C4008F-45L/883C
5962-9560006M9A
5962-9560005M9A
Package Designator EC
Package Designator ECJ
ASI Part #
SMD Part#
ASI Part #
SMD Part#
AS5C4008EC-15/883C
AS5C4008EC-20/883C
AS5C4008EC-25/883C
5962-9560014MZA
5962-9560004MZA
5962-9560003MZA
AS5C4008EC-15/883C
AS5C4008ECJ-20/883C
AS5C4008ECJ-25/883C
5962-9560014MUA
5962-9560004MUA
5962-9560003MUA
AS5C4008EC-35/883C
AS5C4008EC-45/883C
AS5C4008EC-15L/883C
AS5C4008EC-20L/883C
AS5C4008EC-25L/883C
5962-9560002MZA
5962-9560001MZA
5962-9560013MZA
5962-9560008MZA
5962-9560007MZA
AS5C4008ECJ-35/883C
AS5C4008ECJ-45/883C
AS5C4008EC-15L/883C
AS5C4008ECJ-20L/883C
AS5C4008ECJ-25L/883C
5962-9560002MUA
5962-9560001MUA
5962-9560013MUA
5962-9560008MUA
5962-9560007MUA
AS5C4008EC-35L/883C
AS5C4008EC-45L/883C
5962-9560006MZA
5962-9560005MZA
AS5C4008ECJ-35L/883C
AS5C4008ECJ-45L/883C
5962-9560006MUA
5962-9560005MUA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS5C4008
Rev. 4.0 10/00
15
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