J309 [MICROSS]
Linear Systems replaces discontinued Siliconix J309; 线性系统的替代停产的Siliconix J309
| 型号： | J309 |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Linear Systems replaces discontinued Siliconix J309 |
| 文件： | 总1页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J309
FEATURES
The J309 is a high frequency n-channel JFET offering a
DIRECT REPLACEMENT FOR SILICONIX J309
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
wide range and low noise performance. The TO-92
package is well suited for cost sensitive applications
and mass production.
Gpg = 11.5dB
NF = 2.7dB
ABSOLUTE MAXIMUM RATINGS @ 25°C1
(See Packaging Information).
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
J309 Benefits:
‐55°C to +150°C
‐55°C to +135°C
High Power Low Noise gain
Dynamic Range greater than 100dB
Easily matched to 75Ω input
350mW
10mA
‐25V
J309 Applications:
UHV / VHF Amplifiers
Mixers
Oscillators
J309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(F)
VGS(off)
IDSS
CHARACTERISTIC
MIN
‐25
0.7
‐1
12
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
1
‐4
30
‐‐
UNIT
V
CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate to Source Cutoff Voltage
Drain to Source Saturation Current2
Gate Operating Current (Note 3)
Drain to Source On Resistance
VDS = 0V, IG = ‐1µA
VDS = 0V, IG = 10mA
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
VDG = 9V, ID = 10mA
VGS = 0V, ID = 1mA
mA
pA
Ω
IG
rDS(on)
‐15
35
‐‐
‐‐
J309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
CHARACTERISTIC
Forward Transconductance
Output Conductance
Input Capacitance
MIN
10
‐‐
TYP.
14
110
4
MAX
‐‐
250
5
UNIT
mS
µS
CONDITIONS
VDS = 10V, ID = 10mA , f = 1kHz
gos
Ciss
‐‐
pF
VDS = 10V, VGS = ‐10V , f = 1MHz
Click To Buy
Crss
en
Reverse Transfer Capacitance
Equivalent Noise Voltage
‐‐
6
1.9
‐‐
2.5
‐‐
nV/√Hz
VDS = 10V, ID = 10mA , f = 100Hz
J309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX
UNIT
CONDITIONS
NF
Noise Figure
f = 105MHz
f = 450MHz
f = 105MHz
‐‐
‐‐
‐‐
1.5
2.7
16
‐‐
‐‐
‐‐
dB
dB
Gpg
gfg
Power Gain3
f = 450MHz
f = 105MHz
‐‐
‐‐
11.5
14
‐‐
‐‐
VDS = 10V, ID = 10mA
Forward Transconductance
f = 450MHz
f = 105MHz
f = 450MHz
‐‐
‐‐
‐‐
13
‐‐
‐‐
‐‐
mS
gog
Output Conductance
0.16
0.55
Note 1 ‐ Absolute maximum ratings are limiting values above which J309 serviceability may be impaired.
Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%
Note 3 ‐ Measured at optimum input noise match
Micross Components Europe
TO-92 (Bottom View)
Available Packages:
LSJ309 in TO-92
LSJ309 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
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