SST111 [MICROSS]
Linear Systems replaces discontinued Siliconix SST111; 线性系统替换停产的Siliconix SST111
| 型号： | SST111 |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Linear Systems replaces discontinued Siliconix SST111 |
| 文件： | 总1页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST111
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST111
FEATURES
This n-channel JFET is optimised for low noise high
DIRECT REPLACEMENT FOR SILICONIX SST111
LOW GATE LEAKAGE CURRENT
FAST SWITCHING
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
5pA
t(on) ≤ 4ns
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
(See Packaging Information).
Storage Temperature
‐55°C to +150°C
‐55°C to +135°C
SST111 Benefits:
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Short Sample & Hold Aperture Time
Low insertion loss
Low Noise
350mW
SST111 Applications:
Gate Current (Note 1)
50mA
Analog Switches
Commutators
Choppers
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
VGDS = ‐35V
VGSS = ‐35V
SST111 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
VGS(F)
IDSS
IGSS
IG
ID(off)
rDS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current (Note 2)
Gate Reverse Current
MIN
‐35
‐3
‐‐
20
‐‐
‐‐
‐‐
‐‐
TYP.
‐‐
‐‐
0.7
‐‐
‐0.005
‐0.5
0.005
‐‐
MAX
‐‐
‐10
‐‐
‐‐
‐1
‐‐
1
30
UNITS
CONDITIONS
IG = 1µA, VDS = 0V
VDS = 5V, ID = 1µA
IG = 1mA, VDS = 0V
VDS = 15V, VGS = 0V
VGS = ‐15V, VDS = 0V
VDG = 15V, ID = 10mA
VDS = 5V, VGS = ‐10V
IG = 1mA, VDS = 0V
V
mA
nA
pA
nA
Ω
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
SST111 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
gos
rDS(on)
Ciss
CHARACTERISTIC
MIN
‐‐
TYP.
6
25
‐‐
7
MAX
‐‐
‐‐
30
12
5
UNITS
mS
µS
Ω
CONDITIONS
VDS = 20V, ID = 1mA , f = 1kHz
Forward Transconductance
Click To Buy
Output Conductance
Drain to Source On Resistance
Input Capacitance
‐‐
‐‐
‐‐
‐‐
‐‐
VGS = 0V, ID = 0mA, f = 1kHz
VDS = 0V, VGS = ‐10V, f = 1MHz
pF
Crss
en
Reverse Transfer Capacitance
Equivalent Noise Voltage
3
3
‐‐
nV/√Hz
VDG = 10V, ID = 1mA , f = 1kHz
SST111 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
2
VDD = 10V
VGS(H) = 0V
Turn On Rise Time
Turn Off Time
2
ns
td(off)
tf
6
See Switching Circuit
Turn Off Fall Time
15
Note 1 ‐ Absolute maximum ratings are limiting values above which SST111 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
SST111 SWITCHING CIRCUIT PARAMETERS
SWITCHING TEST CIRCUIT
VGS(L)
RL
‐12V
800Ω
12mA
Available Packages:
SOT-23 (Top View)
SST111 in SOT-23
SST111 in bare die.
ID(on)
Micross Components Europe
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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